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ZXMS6004DT8QTA

Diodes Incorporated

ZXMS6004DT8QTA by Diodes Incorporated

ZXMS6004DT8QTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.6 ohm RDS(on), and AEC-Q101 standard. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals for surface mount assembly.

Median Price

$0.904

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 684 parts In-Stock

1+ parts

$1.370

100+ parts

$0.743

1k+ parts

$0.512

10k+ parts

$0.437

684

$1.370

$0.743

$0.512

$0.437

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.438

10k+ parts

-

1,000

-

-

$0.438

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 15,809 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,809

-

-

-

-

NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.721

10k+ parts

$0.667

2,000

-

-

$0.721

$0.667

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 1,871 parts In-Stock

1+ parts

$3.412

100+ parts

-

1k+ parts

-

10k+ parts

-

1,871

$3.412

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 18,539 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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18,539

-

-

-

-

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,000

-

-

-

-

Overview

Unleash the power of cutting-edge technology with the ZXMS6004DT8QTA by Diodes Incorporated. Crafted with precision and expertise, this small signal field effect transistor offers unparalleled performance in switching applications. With its N-CHANNEL configuration and built-in diode elements, this transistor provides seamless operation and reliability. Whether you're looking to enhance your electronic projects or streamline your industrial processes, the ZXMS6004DT8QTA delivers exceptional value and efficiency. Trust Diodes Incorporated for top-tier quality and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and conductivity, making them efficient for switching applications.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage allows for reliable operation in various voltage conditions, ensuring the transistor's longevity.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast and efficient operation, making it ideal for use in electronic circuits that require rapid switching capabilities.

Maximum Drain-Source On Resistance: 0.6 ohm

With a low drain-source on resistance, this transistor minimizes power loss and heat generation, improving overall efficiency in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMS6004DT8QTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6004DT8QTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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