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ZXMS6004SGQTA

Diodes Incorporated

ZXMS6004SGQTA by Diodes Incorporated

ZXMS6004SGQTA by Diodes Incorporated is a N-CHANNEL FET with 60V DS breakdown voltage, 0.6 ohm RDS(on), and -40 to 150°C operating range. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and built-in diode feature.

Median Price

$0.392

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.362

10k+ parts

$0.362

9,000

-

-

$0.362

$0.362

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.422

10k+ parts

$0.351

1,000

-

-

$0.422

$0.351

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.453

100+ parts

-

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300

$0.453

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Mobius Materials

USA . 110,000 parts In-Stock

1+ parts

$0.550

100+ parts

$0.440

1k+ parts

-

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110,000

$0.550

$0.440

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-

Chip Stock

USA . 51,000 parts In-Stock

1+ parts

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51,000

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Vyrian

USA . 10,617 parts In-Stock

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10,617

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Rutronik

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.404

10k+ parts

$0.345

5,000

-

-

$0.404

$0.345

TME

Poland . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.534

10k+ parts

-

1,000

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-

$0.534

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 3,180 parts In-Stock

1+ parts

$0.308

100+ parts

$0.300

1k+ parts

$0.299

10k+ parts

-

3,180

$0.308

$0.300

$0.299

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.444

100+ parts

-

1k+ parts

$0.426

10k+ parts

-

2,000

$0.444

-

$0.426

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Continental Prestige Electronics

USA . 6,571 parts In-Stock

1+ parts

$0.453

100+ parts

-

1k+ parts

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10k+ parts

$0.444

6,571

$0.453

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-

$0.444

Argo Parts USA

USA . 2,296 parts In-Stock

1+ parts

$0.453

100+ parts

-

1k+ parts

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10k+ parts

$0.439

2,296

$0.453

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-

$0.439

Ampacity Inc.

Singapore . 3,051 parts In-Stock

1+ parts

$0.670

100+ parts

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3,051

$0.670

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Kepictronics

USA . 95,000 parts In-Stock

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95,000

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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iodParts Technologies Inc.

India . 55,000 parts In-Stock

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55,000

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QUARKTWIN TECHNOLOGY LTD

USA . 23,010 parts In-Stock

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23,010

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Unlock the power of innovation with the ZXMS6004SGQTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality and reliability in the Small Signal Field Effect Transistors category. This versatile product is perfect for various applications such as switching, offering customers immense value and benefits. With enhanced performance and cutting-edge technology, the ZXMS6004SGQTA provides customers with a seamless and efficient solution for all their electronic needs. Choose Diodes Incorporated for excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance characteristics compared to P-channel transistors, making this product a good choice for many electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and reduces the need for additional components, making it a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast and efficient operation in such scenarios.

Surface Mount: YES

Surface mount compatibility allows for easy integration onto PCBs, saving space and improving overall design flexibility.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without breakdown, ensuring reliability in various operating conditions.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy integration into existing circuit layouts.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the flow of current, making them suitable for precise switching applications.

No. of Terminals: 4

The 4 terminals provide necessary connections for the transistor's operation, ensuring compatibility with a wide range of circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this transistor a dependable choice for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperature environments without compromising performance.

Transistor Element Material: SILICON

Silicon transistors are known for their high efficiency and reliability, making this product a durable and efficient choice for electronic circuits.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows this transistor to function effectively in both extreme cold and hot conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides a reliable and durable terminal surface, ensuring good connectivity and longevity of the transistor.

Maximum Drain-Source On Resistance: 0.6 ohm

With low on-resistance, this transistor minimizes power loss and heat generation, improving overall efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position provides versatile connection options, allowing for flexible circuit design and integration.

Case Connection: SOURCE

Source connection simplifies circuit layout and makes it easier to interface with other components in the circuit.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures reliable soldering during manufacturing processes, enhancing the overall quality and durability of the product.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-quality and reliable performance of the transistor, making it suitable for automotive applications and other demanding environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMS6004SGQTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6004SGQTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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