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FDN5630_NL

Fairchild Semiconductor

FDN5630_NL by Fairchild Semiconductor

Fairchild Semiconductor's FDN5630_NL is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.7A Drain Current, 0.1 ohm On Resistance, and operates in ENHANCEMENT MODE. The PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C temperature.

Median Price

$0.159

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Adafruit Industries

USA . 500 parts In-Stock

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$0.159

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Digiode

USA . 789 parts In-Stock

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IBS Electronics

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AZTECH Wire

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Brazil . 300 parts In-Stock

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Overview

Enhance your electronic projects with the FDN5630_NL by Fairchild Semiconductor. This high-quality small signal Field Effect Transistor (FET) offers exceptional performance in switching applications, providing a reliable and efficient solution for your design needs. With a maximum power dissipation of 0.5 W and a minimum DS breakdown voltage of 60 V, this N-channel transistor is perfect for enhancing circuit efficiency and reliability. Trust in Fairchild Semiconductor's expertise and innovation to bring you cutting-edge technology that delivers value and quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Easy to install and saves space on the circuit board.

Maximum DS Breakdown Voltage: 60 V

Can handle higher voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

Easy to handle and work with in the assembly process.

Terminal Form: GULL WING

Provides secure connections and ease of soldering.

Operating Mode: ENHANCEMENT MODE

Enhances performance in switching applications.

Maximum Drain Current (ID): 1.7 A

Capable of handling high drain currents for efficient operation.

Maximum Power Dissipation: 0.5 W

Can dissipate heat effectively, preventing overheating.

Package Style: SMALL OUTLINE

Compact design for space-saving in small electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable and consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, ensuring reliability.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and durability.

Terminal Finish: MATTE TIN

Provides corrosion resistance and ensures secure connections.

Maximum Drain-Source On Resistance: 0.1 ohm

Low on resistance for efficient switching and minimal power loss.

Terminal Position: DUAL

Allows for flexible placement and connection in circuit layouts.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDN5630_NL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

1.7 A

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

.1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDN5630_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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