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S2N7002ET1G

Onsemi

S2N7002ET1G by Onsemi

S2N7002ET1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.26A ID, and 2.5 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages, it operates b/w -55 to 150 °C with Matte Tin finish and built-in diode.

Median Price

$0.932

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

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$1.821

100+ parts

$1.730

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$1.730

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1,000

$1.821

$1.730

$1.730

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DigiKey

USA . 123,000 parts In-Stock

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Rochester

USA . 2,470 parts In-Stock

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-

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$0.043

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$0.036

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$0.032

2,470

-

$0.043

$0.036

$0.032

Distributors (In-Stock)

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Digiode

USA . 1,646 parts In-Stock

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$0.033

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1,646

$0.033

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Flip Electronics

USA . 123,000 parts In-Stock

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Vyrian

USA . 117,902 parts In-Stock

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Bristol Electronics

USA . 100,000 parts In-Stock

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Sensible Micro Corp

USA . 63,000 parts In-Stock

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Nova Conductors

Japan . 33 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 129,458 parts In-Stock

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$0.030

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$0.029

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$0.029

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Ampacity Inc.

Singapore . 106,105 parts In-Stock

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$0.030

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Corphita

USA . 255 parts In-Stock

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$0.032

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$0.032

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Corohmni

South Africa . 352 parts In-Stock

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$0.035

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352

$0.035

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Aztec Data Supply Inc.

USA . 367 parts In-Stock

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$1.002

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367

$1.002

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.821

100+ parts

$1.730

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$1.730

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1,000

$1.821

$1.730

$1.730

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

USA . 4,843 parts In-Stock

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Bastille Electronics

Australia . 3,407 parts In-Stock

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TANS Electronics

Latvia . 3,084 parts In-Stock

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Kulean Microsystems

USA . 2,397 parts In-Stock

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Problanco Electronics

Mexico . 1,766 parts In-Stock

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Argo Parts USA

USA . 1,626 parts In-Stock

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Formix International (Excess)

India . 1,273 parts In-Stock

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Modulus Dynamics

Lithuania . 700 parts In-Stock

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SupplyDigital Components

Austria . 373 parts In-Stock

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Robosynatics

Brazil . 150 parts In-Stock

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$6.187

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$6.187

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$6.187

150

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$6.187

$6.187

Lucentia Tech

USA . 150 parts In-Stock

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$6.187

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$6.187

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$6.187

150

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$6.187

UHIMA Technologies

Türkiye . 69 parts In-Stock

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Overview

Discover the high-quality S2N7002ET1G by Onsemi, a top-tier manufacturer known for delivering reliable and innovative solutions. This small signal field-effect transistor (FET) is perfect for switching applications, offering enhanced performance and efficiency. With a minimum DS breakdown voltage of 60V and a maximum drain current of 0.26A, this N-channel transistor provides exceptional power handling capabilities. Its compact design and surface mount feature make it easy to integrate into various electronic devices. Trust Onsemi to deliver cutting-edge technology that exceeds expectations and drives your projects forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties, making the transistor reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics compared to P-channel FETs, making this transistor a good choice for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against reverse currents, adding to the transistor's functionality.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in current flow effectively.

Surface Mount: YES

Surface mount technology allows for easier and more compact integration of the transistor onto circuit boards, saving space and simplifying assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) S2N7002ET1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.26 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

S2N7002ET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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