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NTJD4001NT1G

Onsemi

NTJD4001NT1G by Onsemi

NTJD4001NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 30V DS breakdown voltage, 0.25A drain current, and 2.5 ohm on resistance. Ideal for small outline packages in high-temp environments up to 150°C.

Median Price

$0.112

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DigiKey

USA . 1,812 parts In-Stock

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Arrow

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Newark

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Element14

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$0.236

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Verical

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Master Electronics

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Rochester

USA . 4,300 parts In-Stock

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Chip1Stop

Japan . 394 parts In-Stock

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Digiode

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Nova Conductors

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Bristol Electronics

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Flip Electronics

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NAC Semi

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Speed Components Ltd

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Conversion2

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Ampacity Inc.

Singapore . 270,910 parts In-Stock

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India . 251,030 parts In-Stock

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Decca Corp

Germany . 250,821 parts In-Stock

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Corphita

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South Africa . 138 parts In-Stock

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Argo Parts USA

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Netroflash

USA . 2,000 parts In-Stock

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$0.346

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Continental Prestige Electronics

USA . 1,270 parts In-Stock

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$0.351

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Aztec Data Supply Inc.

USA . 209 parts In-Stock

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$1.650

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Modulus Dynamics

Lithuania . 7,764 parts In-Stock

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$1.840

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.906

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$1.810

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$1.810

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Perfect Parts

USA . 1,142,522 parts In-Stock

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GreenTree Electronics

Israel . 135,790 parts In-Stock

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ChipstoGo Electronic ltd

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Brazil . 6,972 parts In-Stock

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USA . 6,972 parts In-Stock

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TANS Electronics

Latvia . 5,340 parts In-Stock

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SupplyDigital Components

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Futuretech Components

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Overview

Discover the NTJD4001NT1G by Onsemi, a high-quality N-CHANNEL Small Signal Field Effect Transistor that offers exceptional performance in switching applications. With a compact design and built-in diode and resistor, this transistor provides seamless operation and reliability. Ideal for various electronic projects, the NTJD4001NT1G delivers efficient power dissipation and enhanced temperature resistance, ensuring long-term durability. Experience the value and benefits of Onsemi's innovative technology with this versatile component, setting new standards in transistor excellence.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type : N-CHANNEL

Allows for efficient current flow in the N-channel configuration.

Configuration : SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Offers versatility and convenience with built-in diode and resistor for specific circuit requirements.

Transistor Application : SWITCHING

Ideal for applications that require high-speed switching capabilities.

Surface Mount : YES

Enables easy and secure mounting onto PCBs for streamlined assembly.

Maximum DS Breakdown Voltage : 30 V

Suitable for low to medium voltage applications.

Package Shape : RECTANGULAR

Saves space and allows for efficient PCB layout.

Terminal Form : GULL WING

Facilitates easy soldering and connection to the circuit.

Operating Mode : ENHANCEMENT MODE

Enhances the transistor's performance for various operating conditions.

Maximum Drain Current (Abs) : 0.25 A

Can handle moderate current requirements in the circuit.

No. of Terminals : 6

Provides multiple connection points for versatile circuit integration.

Maximum Power Dissipation (Abs) : 0.272 W

Efficiently dissipates power to prevent overheating during operation.

Package Style (Meter) : SMALL OUTLINE

Compact design suitable for space-constrained applications.

Field Effect Transistor Technology : METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability in various operating conditions.

Maximum Operating Temperature : 150 °C

Can withstand high-temperature environments for extended periods.

Transistor Element Material : SILICON

Provides excellent electrical properties for reliable transistor functionality.

Terminal Finish : MATTE TIN

Ensures a reliable electrical connection and prevents corrosion.

Maximum Drain-Source On Resistance : 2.5 ohm

Low on-resistance for efficient current flow in the circuit.

Terminal Position : DUAL

Allows flexibility in circuit connection options.

Maximum Time At Peak Reflow Temperature (s) : 30

Ensures safe and effective soldering during assembly process.

Peak Reflow Temperature °C : 260

Suitable for high-temperature soldering processes without damaging the transistor.

Maximum Feedback Capacitance (Crss) : 12 pF

Low feedback capacitance for improved high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTJD4001NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTJD4001NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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