Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NTJD4001NT2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.25A ID, and 2.5 ohm RDS(on). It is used for SWITCHING applications in small outline packages with GULL WING terminals.
Median Price
-
Lifecycle Status
Suppliers In-Stock
4
In-Stock Inventory
1k+
Vyrian
1+ parts
100+ parts
1k+ parts
10k+ parts
Digiode
ComSIT USA
ComSIT Distribution GmbH
AZTECH Wire
$15.890
A-Z Elektronik GmbH
Kulean Microsystems
Problanco Electronics
SupplyDigital Components
TANS Electronics
Corphita
Futuretech Components
UHIMA Technologies
Corohmni
Provides good insulation and protection for the internal components of the transistor.
N-channel transistors typically have higher electron mobility and are commonly used in switching applications.
The built-in diode and resistor simplify circuit design and save space on the PCB.
Designed specifically for switching applications, ensuring reliable performance in such scenarios.
Suitable for automated assembly processes and compact PCB designs.
Can withstand high voltages, making it suitable for various applications.
Capable of handling moderate current levels.
Efficient power handling capabilities.
Can operate in higher temperature environments without degradation in performance.
Low on-resistance ensures minimal power loss and efficient switching.
Low feedback capacitance for better high-frequency performance.
Small Signal Field Effect Transistors (FET) NTJD4001NT2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTJD4001NT2G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Multiple Devices 14/Apr/2010
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
LM555CM
Intersil
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
2N7002
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
LM107H
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;
1N4148
Baneasa S A
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
ROHM
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SS14
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803ADW
Texas Instruments
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
2N7002-7-F
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
LP2950CDT-3.3G
Onsemi
LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
Leshan Radio
SMBJ18CA
Good-ark Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;
Itt Semiconductor
CRCW06031K00FKEAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
International Semiconductor
SI4435DDY-T1-GE3
SI4435DDY-T1-GE3 by Vishay Intertechnology is a P-channel FET with 30V breakdown voltage and 11.4A drain current. Ideal for switching applications, it features a built-in diode, 0.024 ohm on-resistance, and operates in enhancement mode at up to 150°C.
SI2308BDS-T1-GE3
SI2308BDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 2.3A max drain current, ideal for switching applications. It operates in enhancement mode with a max power dissipation of 1.66W at 150°C, featuring a small outline package style for surface mount assembly.
2N7000
Vishay Intertechnology's 2N7000 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.4W. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures from -55 to 150 °C.
2N7000-TA
Vishay Semiconductors
Vishay Semiconductors' 2N7000-TA is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A ID, and 5 ohm RDS. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max temp of 150°C and features a cylindrical package shape.
BSS84AKM,315
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): CHIP CARRIER; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
NDS7002A
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
SI2323DDS-T1-GE3
SI2323DDS-T1-GE3 by Vishay Intertechnology is a P-channel small signal FET with a min DS breakdown voltage of 20V. It is used for switching applications and operates in enhancement mode. With a max drain current of 5.3A and a max drain-source on resistance of 0.039 ohm, it offers efficient performance in a compact package.
BSS138BKVL
Nexperia's BSS138BKVL is a N-channel FET with 60V breakdown voltage and 1.6 ohm on-resistance, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. This small outline transistor is surface mountable and complies with AEC-Q101 and IEC-60134 standards.
BSS123TA
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): SMALL OUTLINE;
2N7002DW
Transys Electronics
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 5 pF;
SI4459ADY-T1-GE3
SI4459ADY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, 29A Drain Current, and 0.005 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a RECTANGULAR package with GULL WING terminals.
FDS9431A-F085
FDS9431A-F085 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3.5A Drain Current, and 0.13 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150°C. This RECTANGULAR package features GULL WING terminals and is suitable for surface mount installations.
SI2365EDS-T1-GE3
SI2365EDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 5.9A Drain Current, and 0.041 ohm On Resistance. With ENHANCEMENT MODE operation and GULL WING terminals, it operates b/w -55 to 150 °C for various electronic designs.
LBSS138LT1G
LBSS138LT1G by Leshan Radio is a N-CHANNEL FET with 50V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.2A Drain Current, 3.5 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body, it's designed for surface mount installation at temperatures up to 150°C.
NDS331N
NDS331N by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a max drain current of 1.3A, min DS breakdown voltage of 20V, and max power dissipation of 0.5W. This enhancement mode transistor operates at up to 150°C and has a package style of small outline, making it ideal for various electronic circuits.
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
FDN357N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
BSS123
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified;
BSS138LT1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
LND150N3-GP013
Microchip Technology
LND150N3-GP013 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, 0.03A ID, and 1000 ohm RDS(on). Ideal for switching applications, it operates in depletion mode with a max temp of 150°C. The transistor features a built-in diode and has a package style of cylindrical.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NTJD4001NT1G
NTJD4001NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 30V DS breakdown voltage, 0.25A drain current, and 2.5 ohm on resistance. Ideal for small outline packages in high-temp environments up to 150°C.
NTJD5121NT1G
NTJD5121NT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.295A max drain current, and 1.6 ohm max on resistance. Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C.
NTJD4401NT1G
NTJD4401NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. With a max drain current of 0.63A and on resistance of 0.375 ohm, it's ideal for small outline packages in high-temp environments up to 150°C.
NTJD1155LT1G
NTJD1155LT1G by Onsemi is a Small Signal FET with N/P-Channel, ideal for switching applications. It features 8V DS Breakdown Voltage, 1.3A Drain Current, and 0.175ohm On Resistance. Operating from -55 to 150°C, it comes in a small outline package with Gull Wing terminals for surface mount assembly.
NTJD4152PT1G
NTJD4152PT1G by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 0.88A, and Max Power Dissipation of 0.35W. This small outline transistor operates in an ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
NTJD4105CT1G
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Maximum Drain-Source On Resistance: .375 ohm; Maximum Operating Temperature: 150 Cel;
NTJD4158CT1G
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .27 W; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
NTJD4105CT2G
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
NTJD5121NT2G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 1.6 ohm;
NTJD1155LT2G
N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
NTJD1155LT1
N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
NTJD4105CT1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Maximum Drain Current (ID): .63 A; Maximum Operating Temperature: 150 Cel;
NTJD4105CT2
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Terminal Form: GULL WING; JESD-609 Code: e0;
NTJD4105CT4
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Maximum Feedback Capacitance (Crss): 5 pF; Qualification: Not Qualified;
NTJD4105CT4G
NTJD4105CT4G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 1.1A max drain current, 0.375 ohm RDS(on), and 150°C max temp making it ideal for various electronic circuits.
NTJD4152PT2G
NTJD4152PT2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.88A ID, and 0.26 ohm RDS(ON). Ideal for SWITCHING applications, it features 2 elements with built-in diode and resistor in a small outline package. Operating from -55 to 150 °C, it's designed for surface mount with GULL WING terminals.
NTJD2152PT2G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Transistor Application: SWITCHING; No. of Elements: 2;
NTJD4001NT1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .272 W; Terminal Position: DUAL; Peak Reflow Temperature (C): 235;
NTJD2101PT1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved