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NTJD4001NT2G

Onsemi

NTJD4001NT2G by Onsemi

NTJD4001NT2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.25A ID, and 2.5 ohm RDS(on). It is used for SWITCHING applications in small outline packages with GULL WING terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 2,481 parts In-Stock

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Digiode

USA . 1,518 parts In-Stock

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ComSIT USA

USA . 539 parts In-Stock

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ComSIT Distribution GmbH

Germany . 539 parts In-Stock

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AZTECH Wire

Italy . 472 parts In-Stock

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$15.890

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A-Z Elektronik GmbH

Germany . 6,491 parts In-Stock

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Kulean Microsystems

USA . 4,382 parts In-Stock

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Problanco Electronics

Mexico . 3,371 parts In-Stock

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SupplyDigital Components

Austria . 3,123 parts In-Stock

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TANS Electronics

Latvia . 1,530 parts In-Stock

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Corphita

USA . 1,249 parts In-Stock

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Futuretech Components

Singapore . 508 parts In-Stock

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UHIMA Technologies

Türkiye . 418 parts In-Stock

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Corohmni

South Africa . 330 parts In-Stock

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Overview

Discover the NTJD4001NT2G by Onsemi, a high-quality Small Signal Field Effect Transistor designed for switching applications. With its N-CHANNEL configuration and unique design featuring two elements with a built-in diode and resistor, this product offers unparalleled value and performance. Manufactured by Onsemi, known for their innovative technology and reliability, this FET is ideal for various electronic projects. Experience enhanced functionality and efficiency with the NTJD4001NT2G, a versatile solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and are commonly used in switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Suitable for automated assembly processes and compact PCB designs.

Minimum DS Breakdown Voltage: 30 V

Can withstand high voltages, making it suitable for various applications.

Maximum Drain Current (Abs) (ID): 0.25 A

Capable of handling moderate current levels.

Maximum Power Dissipation (Abs): 0.272 W

Efficient power handling capabilities.

Maximum Operating Temperature: 150 °C

Can operate in higher temperature environments without degradation in performance.

Maximum Drain-Source On Resistance: 2.5 ohm

Low on-resistance ensures minimal power loss and efficient switching.

Maximum Feedback Capacitance (Crss): 12 pF

Low feedback capacitance for better high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTJD4001NT2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTJD4001NT2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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