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BSS8402DW-7-F

Diodes Incorporated

BSS8402DW-7-F by Diodes Incorporated

BSS8402DW-7-F by Diodes Inc. is a small signal FET with N-channel and P-channel polarity. It has a min DS breakdown voltage of 60V and max drain current of 0.13A, making it suitable for switching applications. Its package style is small outline with gull wing terminals, and it operates in enhancement mode at temperatures up to 150°C.

Median Price

$0.196

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 747 parts In-Stock

1+ parts

$0.580

100+ parts

$0.223

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$0.167

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747

$0.580

$0.223

$0.167

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Adafruit Industries

USA . 300 parts In-Stock

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$1.811

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$1.720

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$1.720

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300

$1.811

$1.720

$1.720

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Arrow

USA . 515,500 parts In-Stock

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$0.136

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$0.087

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$0.136

$0.087

Verical

USA . 515,500 parts In-Stock

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$0.210

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Newark

USA . 69,000 parts In-Stock

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$0.161

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DigiKey

USA . 20,088 parts In-Stock

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Farnell

UK . 4,236 parts In-Stock

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$0.181

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$0.136

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$0.121

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$0.181

$0.136

$0.121

Element14

Singapore . 3,471 parts In-Stock

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$0.293

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$0.196

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$0.193

3,471

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$0.193

Distributors (In-Stock)

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Maritex

Poland . 183 parts In-Stock

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$0.103

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$0.063

1k+ parts

$0.054

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$0.042

183

$0.103

$0.063

$0.054

$0.042

Nova Conductors

Japan . 200 parts In-Stock

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$0.263

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$0.263

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TME

Poland . 1,426 parts In-Stock

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$0.520

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$0.214

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$0.133

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$0.100

1,426

$0.520

$0.214

$0.133

$0.100

Vyrian

USA . 392,482 parts In-Stock

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IBS Electronics

USA . 333,000 parts In-Stock

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$0.210

333,000

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NAC Semi

USA . 114,000 parts In-Stock

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Chip Stock

USA . 90,680 parts In-Stock

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Bristol Electronics

USA . 8,634 parts In-Stock

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EPE Components Inc.

USA . 5,676 parts In-Stock

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5,676

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Rutronik

Germany . 3,000 parts In-Stock

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$0.117

3,000

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$0.117

Prism Electronics

USA . 2,848 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,749 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,438 parts In-Stock

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ComSIT USA

USA . 2,438 parts In-Stock

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Semi Source

USA . 2,417 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,858 parts In-Stock

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VNN

France . 1,712 parts In-Stock

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Inventory MP

USA . 992 parts In-Stock

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Electronics Depot

USA . 990 parts In-Stock

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Connect4Technologies Inc.

Canada . 350 parts In-Stock

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Contempo Components LLC

USA . 22 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 391,844 parts In-Stock

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$0.062

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Semicontronic

India . 390,793 parts In-Stock

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$0.062

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Argo Parts USA

USA . 428 parts In-Stock

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$0.163

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$0.158

428

$0.163

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$0.158

Modulus Dynamics

Lithuania . 49 parts In-Stock

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$0.211

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$0.209

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$0.202

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49

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Corohmni

South Africa . 500 parts In-Stock

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$0.561

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500

$0.561

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$1.811

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$1.720

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$1.720

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300

$1.811

$1.720

$1.720

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Aztec Data Supply Inc.

USA . 200 parts In-Stock

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$1.874

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$1.874

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Perfect Parts

USA . 336,031 parts In-Stock

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RC Electronics

USA . 72,890 parts In-Stock

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$0.190

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$0.180

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$0.170

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$0.190

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$0.170

iodParts Technologies Inc.

India . 28,180 parts In-Stock

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Robosynatics

Brazil . 15,276 parts In-Stock

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$1.765

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$1.729

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$1.729

15,276

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$1.765

$1.729

$1.729

Lucentia Tech

USA . 15,276 parts In-Stock

1+ parts

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$1.765

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$1.729

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$1.729

15,276

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$1.765

$1.729

$1.729

Assy Fe

Spain . 13,632 parts In-Stock

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Lixinc

USA . 10,108 parts In-Stock

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Continental Prestige Electronics

USA . 4,200 parts In-Stock

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$0.228

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$0.130

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$0.123

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$0.228

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$0.123

Futuretech Components

Singapore . 3,415 parts In-Stock

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XScomponents

USA . 3,000 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,749 parts In-Stock

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2,749

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Glotronic Ltd.

UK . 2,550 parts In-Stock

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2,550

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Computer Components Inc. - USA

USA . 1,000 parts In-Stock

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1,000

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S.R.D Solutions

India . 100 parts In-Stock

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100

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Overview

Discover the BSS8402DW-7-F by Diodes Incorporated, a premium Small Signal Field Effect Transistor (FET) that delivers exceptional quality and unbeatable performance. With its N-CHANNEL AND P-CHANNEL polarity and SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE configuration, this transistor is perfect for SWITCHING applications. Designed with cutting-edge METAL-OXIDE SEMICONDUCTOR technology, it ensures enhanced efficiency and durability. The BSS8402DW-7-F offers incredible value to customers, providing maximum power dissipation of 0.2 W and minimum DS breakdown voltage of 60 V. Its compact RECTANGULAR shape and GULL WING terminals make it easy to install in any project. Trust Diodes Incorporated for top-notch products that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the internal components, making this product suitable for various environments and applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

The inclusion of both N-channel and P-channel types allows for versatile circuit designs, accommodating different requirements and enhancing flexibility in small signal applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with two elements and a built-in diode offers improved circuit performance and ease of integration, ensuring efficient switching capabilities and enabling the design of more complex electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product excels in high-speed switching operations, allowing for efficient control and operation of electronic circuits and systems.

Surface Mount: YES

With surface mount capability, this product enables easy and space-efficient PCB assembly, making it ideal for compact and densely populated applications, such as consumer electronics and communication devices.

Minimum DS Breakdown Voltage: 60 V

The minimum DS breakdown voltage of 60 V provides a reliable and robust transistor, capable of withstanding high voltage applications, ensuring stable operation even under challenging conditions.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy handling and mounting on PCBs, improving efficiency during assembly and making it suitable for automated manufacturing processes.

Terminal Form: GULL WING

The gull wing terminal form offers secure and reliable connections, allowing for efficient soldering and ensuring proper electrical contact, thereby enhancing the overall performance and reliability of the product.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation ensures low power consumption and improved control over the transistor's output characteristics, making it suitable for a wide range of small signal applications.

No. of Elements: 2

Equipped with two elements, this product provides increased functionality and versatility in circuit design, allowing for enhanced performance and greater design flexibility.

Maximum Drain Current (Abs) (ID): 0.13 A

With a maximum drain current of 0.13 A, this transistor can handle higher current loads, providing ample power handling capabilities for a variety of applications.

No. of Terminals: 6

The presence of six terminals allows for multiple connections and expanded circuit options, enabling more complex circuit designs and facilitating efficient integration into larger systems.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle higher power levels without risking damage or performance degradation, ensuring reliable operation even under demanding conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves valuable board space, enabling compact PCB designs and contributing to the overall miniaturization of electronic devices, making it an ideal choice for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Built upon metal-oxide semiconductor technology, this transistor offers excellent reliability, low power consumption, and high performance, making it a dependable choice for various small signal applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand higher temperature environments, ensuring stable operation even under challenging thermal conditions.

Transistor Element Material: SILICON

Utilizing silicon as the transistor element material provides excellent performance and reliability characteristics, making this product suitable for a wide range of applications, including both commercial and industrial sectors.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this transistor can operate reliably in extreme cold conditions, expanding its usability in various environments and applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers enhanced solderability and corrosion resistance, ensuring reliable connections, optimal electrical performance, and long-term durability.

Maximum Drain Current (ID): 0.115 A

With a maximum drain current of 0.115 A, this transistor can handle varying current loads, providing ample flexibility in circuit designs and catering to different application requirements.

Maximum Drain-Source On Resistance: 7.5 ohm

The maximum drain-source on resistance of 7.5 ohms ensures efficient conduction and low power dissipation, resulting in improved overall performance and energy efficiency.

Terminal Position: DUAL

Featuring dual terminal positions, this transistor facilitates flexible board layout and improved connectivity options, enabling efficient integration into various circuit configurations.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this product maintains its integrity and performance even in humid environments, ensuring long-term reliability and stability.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time allowed at the peak reflow temperature of 30 seconds ensures safe and reliable soldering and prevents thermal damage to the transistor during assembly processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, allowing for efficient and reliable assembly on PCBs.

Maximum Feedback Capacitance (Crss): 5 pF

The maximum feedback capacitance of 5 pF minimizes potential signal distortion and ensures improved stability in high-frequency applications, making it well-suited for signal amplification and processing circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS8402DW-7-F attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.13 A

Maximum Drain Current (ID):

.115 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS8402DW-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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