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NUD3124LT1G

Onsemi

NUD3124LT1G by Onsemi

NUD3124LT1G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 0.15A ID, and 1.4 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features built-in diode and resistor in a small outline package for surface mount assembly.

Median Price

$0.242

Lifecycle Status

EOL

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Distrelec

Netherlands . 613 parts In-Stock

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$1.049

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$0.984

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$0.833

10k+ parts

$0.735

613

$1.049

$0.984

$0.833

$0.735

Verical

USA . 12,000 parts In-Stock

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$0.125

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$0.125

EBV Elektronik

Germany . 3,000 parts In-Stock

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Element14

Singapore . 3 parts In-Stock

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$0.242

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$0.178

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$0.171

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$0.171

Distributors (In-Stock)

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Greenchips

USA . 4,477 parts In-Stock

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$0.215

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$0.215

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$0.141

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$0.135

4,477

$0.215

$0.215

$0.141

$0.135

Digiode

USA . 2,323 parts In-Stock

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$0.997

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2,323

$0.997

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Nova Conductors

Japan . 39 parts In-Stock

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Chip Stock

USA . 39,500 parts In-Stock

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Vyrian

USA . 8,899 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 4,477 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,540 parts In-Stock

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Sensible Micro Corp

USA . 2,219 parts In-Stock

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Electronics Depot

USA . 277 parts In-Stock

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LWI Electronics Inc

India . 70 parts In-Stock

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Bristol Electronics

USA . 41 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 3,834 parts In-Stock

1+ parts

$0.106

100+ parts

$0.103

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$0.103

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-

3,834

$0.106

$0.103

$0.103

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Ampacity Inc.

Singapore . 3,414 parts In-Stock

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$0.106

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$0.106

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Corohmni

South Africa . 311 parts In-Stock

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$0.125

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311

$0.125

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Argo Parts USA

USA . 1,483 parts In-Stock

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$0.179

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$0.173

1,483

$0.179

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$0.173

Vigor

Singapore . 500 parts In-Stock

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$0.420

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500

$0.420

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Component Stockers USA

USA . 38 parts In-Stock

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$0.430

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$0.250

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$0.150

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$0.120

38

$0.430

$0.250

$0.150

$0.120

Continental Prestige Electronics

USA . 3 parts In-Stock

1+ parts

$0.435

100+ parts

$0.226

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$0.145

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$0.139

3

$0.435

$0.226

$0.145

$0.139

Corphita

USA . 1,298 parts In-Stock

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$0.944

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$0.944

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Aztec Data Supply Inc.

USA . 2,934 parts In-Stock

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$1.900

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$1.900

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AZTECH Wire

Italy . 466 parts In-Stock

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$16.000

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RC Electronics

USA . 83,182 parts In-Stock

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Kepictronics

USA . 69,000 parts In-Stock

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Perfect Parts

USA . 43,958 parts In-Stock

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Lixinc

USA . 17,190 parts In-Stock

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Robosynatics

Brazil . 9,701 parts In-Stock

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Lucentia Tech

USA . 9,701 parts In-Stock

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$0.175

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$0.172

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$0.172

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$0.172

Problanco Electronics

Mexico . 5,856 parts In-Stock

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TANS Electronics

Latvia . 5,753 parts In-Stock

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Kulean Microsystems

USA . 5,231 parts In-Stock

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SupplyDigital Components

Austria . 4,173 parts In-Stock

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iodParts Technologies Inc.

India . 3,908 parts In-Stock

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Microchip USA

USA . 2,901 parts In-Stock

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Infinite Electronics LLP (Excess)

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 972 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.980

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$0.950

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$0.930

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$0.930

Advanced Electronics

New Zealand . 94 parts In-Stock

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Overview

Enhance your electronic devices with the NUD3124LT1G by Onsemi, a high-quality small signal field-effect transistor perfect for switching applications. Manufactured by Onsemi, known for their innovative technology and reliable products, this N-CHANNEL transistor offers exceptional performance and durability. With a built-in diode and resistor, this transistor simplifies circuit design and enhances efficiency. Whether you're working on consumer electronics or industrial equipment, the NUD3124LT1G delivers value, benefits, and advantages that will elevate your projects to the next level. Choose Onsemi for superior quality and performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes this product lightweight and durable, ideal for applications where weight and reliability are important.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and lower resistivity compared to P-channel FETs, making them suitable for high-performance switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Having a built-in diode and resistor simplifies the circuit design and saves space on the PCB, making it easier to integrate into various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low on-resistance, making it efficient for controlling power in electronic circuits.

Surface Mount: YES

Being surface mountable, this FET can be easily mounted on the surface of the PCB, simplifying the assembly process and saving space on the board.

Minimum DS Breakdown Voltage: 28 V

With a minimum breakdown voltage of 28V, this FET can handle higher voltages, making it suitable for applications where robustness and reliability are crucial.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand higher temperatures, making it suitable for applications where thermal management is important.

Technical Specifications

Small Signal Field Effect Transistors (FET) NUD3124LT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

28 V

Maximum Drain Current (ID):

.15 A

Maximum Drain-Source On Resistance:

1.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NUD3124LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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