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NUD3105LT1G

Onsemi

NUD3105LT1G by Onsemi

NUD3105LT1G by Onsemi is a N-CHANNEL FET with 6V DS breakdown voltage, 0.5A ID, and 1.3 ohm RDS(on). Ideal for switching applications, it features a built-in diode and resistor in a small outline package for surface mount assembly. Operating at up to 150°C, it uses metal-oxide semiconductor technology with matte tin finish.

Median Price

$0.102

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Nova Conductors

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Vyrian

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Argo Parts USA

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$0.073

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Corohmni

South Africa . 491 parts In-Stock

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Netroflash

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Aztec Data Supply Inc.

USA . 1,573 parts In-Stock

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Vigor

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Benley Electronics

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$2.867

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AZTECH Wire

Italy . 567 parts In-Stock

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Ampacity Inc.

Singapore . 8,687 parts In-Stock

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Overview

Upgrade your electronics with the NUD3105LT1G by Onsemi, a high-quality small signal field effect transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry known for its innovative technology and superior products, this N-channel transistor is ideal for switching applications. With a single configuration including a built-in diode and resistor, this surface mount transistor provides enhanced functionality and ease of use. Experience the value and benefits of this product's efficient operation and maximum drain current of 0.5A, making it a must-have component for your electronics projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high performance and efficiency in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space on the PCB.

Transistor Application: SWITCHING

Designed for switching applications, ensuring fast and efficient operation.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and labor costs.

Minimum DS Breakdown Voltage: 6 V

Provides a safe operating range for the transistor, protecting it from damage.

Package Shape: RECTANGULAR

The rectangular shape is easy to handle and mount on the PCB.

Terminal Form: GULL WING

Gull wing terminals make soldering easy and reliable, ensuring a strong connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easy to control and offer high gain and low output impedance.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space on the PCB, ideal for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low power consumption.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this transistor can withstand rugged environments.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and stability in various operating conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides excellent solderability and corrosion resistance for long-term reliability.

Maximum Drain Current (ID): 0.5 A

With a high drain current rating, this transistor can handle heavy loads with ease.

Maximum Drain-Source On Resistance: 1.3 ohm

Low on-resistance ensures minimal power loss and efficient operation.

Terminal Position: DUAL

Dual terminal position provides multiple connection options for versatile circuit designs.

Maximum Time At Peak Reflow Temperature (s): 40

The short reflow time ensures proper soldering without damaging the transistor.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without any issues.

Technical Specifications

Small Signal Field Effect Transistors (FET) NUD3105LT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

6 V

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

1.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NUD3105LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5945-01-631-4312, 5945016314312

NIIN

016314312

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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