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DMP10H4D2S-7

Diodes Incorporated

DMP10H4D2S-7 by Diodes Incorporated

DMP10H4D2S-7 by Diodes Inc. is a P-channel FET with 100V DS breakdown voltage, 0.27A max drain current, and 4.2 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and -55°C min operating temp.

Median Price

$0.108

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,044,000 parts In-Stock

1+ parts

-

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$0.045

1,044,000

-

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$0.045

Verical

USA . 3,000 parts In-Stock

1+ parts

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$0.052

3,000

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-

-

$0.052

Element14

Singapore . 1,162 parts In-Stock

1+ parts

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100+ parts

$0.214

1k+ parts

$0.127

10k+ parts

$0.125

1,162

-

$0.214

$0.127

$0.125

Farnell

UK . 17 parts In-Stock

1+ parts

-

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$0.164

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$0.116

10k+ parts

$0.103

17

-

$0.164

$0.116

$0.103

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 589 parts In-Stock

1+ parts

$0.070

100+ parts

$0.052

1k+ parts

$0.043

10k+ parts

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589

$0.070

$0.052

$0.043

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Nova Conductors

Japan . 79 parts In-Stock

1+ parts

$0.106

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79

$0.106

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Mobius Materials

USA . 9,977 parts In-Stock

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$0.200

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$0.160

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9,977

$0.200

$0.160

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Vyrian

USA . 420,051 parts In-Stock

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Chip Stock

USA . 149,950 parts In-Stock

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NAC Semi

USA . 66,000 parts In-Stock

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$0.072

66,000

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$0.072

IBS Electronics

USA . 45,000 parts In-Stock

1+ parts

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$0.146

45,000

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$0.146

Bristol Electronics

USA . 20,636 parts In-Stock

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20,636

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Component Sense

UK . 3,932 parts In-Stock

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3,932

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Rutronik

Germany . 3,000 parts In-Stock

1+ parts

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$0.065

3,000

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$0.065

Sensible Micro Corp

USA . 2,400 parts In-Stock

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2,400

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Cyclops Electronics Ltd

UK . 1,200 parts In-Stock

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ComSIT Distribution GmbH

Germany . 900 parts In-Stock

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900

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Bas Electronics GmbH & Co. KG

Germany . 14 parts In-Stock

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14

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 471,639 parts In-Stock

1+ parts

$0.038

100+ parts

$0.037

1k+ parts

$0.037

10k+ parts

-

471,639

$0.038

$0.037

$0.037

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Ampacity Inc.

Singapore . 471,829 parts In-Stock

1+ parts

$0.083

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471,829

$0.083

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Decca Corp

Germany . 471,339 parts In-Stock

1+ parts

$0.083

100+ parts

$0.081

1k+ parts

$0.081

10k+ parts

-

471,339

$0.083

$0.081

$0.081

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Argo Parts USA

USA . 2,535 parts In-Stock

1+ parts

$0.104

100+ parts

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1k+ parts

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$0.101

2,535

$0.104

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$0.101

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.106

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1,000

$0.106

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Continental Prestige Electronics

USA . 26,825 parts In-Stock

1+ parts

$0.375

100+ parts

$0.152

1k+ parts

$0.079

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26,825

$0.375

$0.152

$0.079

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Corohmni

South Africa . 95 parts In-Stock

1+ parts

$0.380

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95

$0.380

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Aztec Data Supply Inc.

USA . 1,907 parts In-Stock

1+ parts

$0.550

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1,907

$0.550

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Advanced Electronics

New Zealand . 89 parts In-Stock

1+ parts

$0.645

100+ parts

$0.587

1k+ parts

$0.529

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89

$0.645

$0.587

$0.529

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Modulus Dynamics

Lithuania . 18,866 parts In-Stock

1+ parts

$1.538

100+ parts

$1.538

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$1.538

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18,866

$1.538

$1.538

$1.538

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Speed Components Ltd (Excess)

Israel . 505,762 parts In-Stock

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505,762

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Perfect Parts

USA . 134,672 parts In-Stock

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134,672

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iodParts Technologies Inc.

India . 43,925 parts In-Stock

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43,925

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Infinite Electronics LLP (Excess)

. 38,831 parts In-Stock

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38,831

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 18,047 parts In-Stock

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RC Electronics

USA . 15,000 parts In-Stock

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Robosynatics

Brazil . 6,795 parts In-Stock

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6,795

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Lucentia Tech

USA . 6,795 parts In-Stock

1+ parts

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100+ parts

$0.349

1k+ parts

$0.342

10k+ parts

$0.342

6,795

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$0.349

$0.342

$0.342

Kepictronics

USA . 3,250 parts In-Stock

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3,250

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Cyclops Electronics Ltd (Excess)

UK . 760 parts In-Stock

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760

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ChipstoGo Electronic ltd

UK . 69 parts In-Stock

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69

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Overview

Unlock the power of reliable and efficient switching with the DMP10H4D2S-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated guarantees quality and performance. This P-Channel small signal Field Effect Transistor (FET) with built-in diode is perfect for a wide range of applications. Its high breakdown voltage, low on-resistance, and enhancement mode operation ensure optimal functionality. Trust Diodes Incorporated to deliver value and benefits that exceed expectations. Elevate your projects with the DMP10H4D2S-7 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Offers efficient control of current flow, making it suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor, saving space and reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching purposes, providing reliable performance in such applications.

Surface Mount: YES

Enables easy and convenient mounting onto circuit boards, enhancing the overall efficiency of the assembly process.

Minimum DS Breakdown Voltage: 100 V

Can handle high voltages, making it suitable for a variety of electronic systems that require such capabilities.

Package Shape: RECTANGULAR

Allows for efficient placement on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

Facilitates easy soldering during the assembly process, ensuring a secure connection.

Operating Mode: ENHANCEMENT MODE

Enhances control over the transistor's behavior, enabling precise manipulation of its characteristics.

No. of Terminals: 3

Simplifies circuit connections by having a limited number of terminals, reducing complexity in the design.

Package Style (Meter): SMALL OUTLINE

Occupies minimal space on the circuit board, ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable performance and efficient operation in a variety of electronic applications.

Transistor Element Material: SILICON

Known for its high stability and performance, ensuring consistent operation over time.

Minimum Operating Temperature: -55 °C

Can withstand low temperatures, making it suitable for applications that require operation in harsh environments.

Terminal Finish: MATTE TIN

Enhances solderability and ensures a secure connection, improving overall reliability.

Maximum Drain Current (ID): 0.27 A

Capable of handling significant current levels, suitable for applications that require such performance.

Maximum Drain-Source On Resistance: 4.2 ohm

Offers low resistance for efficient current flow, ensuring minimal power loss and high performance.

Terminal Position: DUAL

Provides flexibility in circuit connections, allowing for multiple configurations based on the application's requirements.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during the soldering process, ensuring reliable assembly.

Reference Standard: AEC-Q101

Complies with industry standards, ensuring compatibility and performance in various electronic systems.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP10H4D2S-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.27 A

Maximum Drain-Source On Resistance:

4.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP10H4D2S-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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