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DMP10H4D2S-13

Diodes Incorporated

DMP10H4D2S-13 by Diodes Incorporated

DMP10H4D2S-13 by Diodes Inc. is a P-channel FET with 100V DS breakdown voltage and 4.2 ohm max RDS(on). Ideal for switching applications, it operates in enhancement mode, has single configuration with built-in diode, and features Gull Wing terminals for surface mount assembly.

Median Price

$0.057

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 10,000 parts In-Stock

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$0.057

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$0.057

Distributors (In-Stock)

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Vyrian

USA . 17,132 parts In-Stock

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17,132

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NAC Semi

USA . 10,000 parts In-Stock

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$0.083

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$0.083

Nova Conductors

Japan . 650 parts In-Stock

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650

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Distributors (Availability)

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Ampacity Inc.

Singapore . 17,128 parts In-Stock

1+ parts

$0.053

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17,128

$0.053

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Semicontronic

India . 17,080 parts In-Stock

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$0.053

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$0.052

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$0.051

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17,080

$0.053

$0.052

$0.051

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Aztec Data Supply Inc.

USA . 3,010 parts In-Stock

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$1.810

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3,010

$1.810

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Corohmni

South Africa . 107 parts In-Stock

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$1.964

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107

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Argo Parts USA

USA . 3,962 parts In-Stock

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Advanced Electronics

New Zealand . 870 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Continental Prestige Electronics

USA . 209 parts In-Stock

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Overview

Discover the powerful DMP10H4D2S-13 by Diodes Incorporated, a high-quality P-CHANNEL Small Signal Field Effect Transistor with a built-in diode, perfect for switching applications. Designed with cutting-edge technology and precision engineering, this transistor offers reliable performance and efficiency. With its compact size and enhanced features, this product is a game-changer in the electronics industry. Unleash the potential of your projects with the DMP10H4D2S-13 and experience seamless functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides a cost-effective and lightweight solution for the FET.

Polarity or Channel Type: P-CHANNEL

The P-channel configuration allows for easy integration into circuits requiring P-Channel FETs, providing greater design flexibility.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in the single configuration simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for switching applications, this FET offers fast switching speeds and low on-state resistance for efficient performance.

Surface Mount: YES

Being surface mount compatible allows for easy and efficient PCB assembly, reducing production time and costs.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage of 100V, this FET can be used in high voltage applications while maintaining reliability and stability.

Package Shape: RECTANGULAR

The rectangular package shape ensures compatibility with standard PCB layouts and facilitates easy mounting.

Terminal Form: GULL WING

The gull wing terminal form provides robust mechanical strength and makes soldering easier during assembly.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation ensures precise control over the FET's switching characteristics for optimal performance.

No. of Elements: 1

With a single element design, this FET offers simplicity in circuit design and reduces the chances of component failure.

No. of Terminals: 3

The 3 terminals provide necessary connections for power, control, and grounding, making it easy to interface with other components.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density mounting of components.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Featuring MOSFET technology, this FET offers high input impedance and low output impedance for efficient signal switching.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability, temperature stability, and performance consistency.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this FET can withstand harsh environmental conditions and operate reliably in extreme temperatures.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability in various operating environments.

Maximum Drain Current (ID): 0.27 A

The maximum drain current of 0.27A allows for handling moderate power levels, making it suitable for a wide range of applications.

Maximum Drain-Source On Resistance: 4.2 ohm

With low on-resistance of 4.2 ohms, this FET minimizes power loss and heat generation, improving overall efficiency.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting orientation and allows for easier integration into different circuit layouts.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures reliable and consistent solder connections during manufacturing processes.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 automotive industry standard, this FET meets stringent quality and reliability requirements for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP10H4D2S-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.27 A

Maximum Drain-Source On Resistance:

4.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP10H4D2S-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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