Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DMP1046UFDB-13 by Diodes Inc. is a P-CHANNEL FET with 2 elements, built-in diode, and 3.8A max drain current. Ideal for switching applications in small outline packages with 0.061 ohm RDS(on) and 12V breakdown voltage. Suitable for enhancement mode operation in surface mount designs.
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Verical
$0.103
Nova Conductors
$0.157
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NAC Semi
$0.159
Ampacity Inc.
$0.088
Semicontronic
$0.086
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$0.153
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The use of plastic/epoxy as the body material makes the transistor lightweight and durable, ensuring a longer lifespan.
The P-channel design allows for efficient switching applications, making this transistor suitable for a wide range of electronic devices.
With a minimum breakdown voltage of 12 V, this transistor can handle a good amount of voltage without malfunctioning, providing stability in operation.
The high maximum drain current rating of 3.8 A allows for the transistor to handle high power loads, making it suitable for applications requiring high current.
The low drain-source on resistance of 0.061 ohm results in minimal power losses and heat generation during operation, leading to greater efficiency.
Designed for switching applications, this transistor can quickly turn on and off, making it ideal for use in circuits that require rapid switching.
Being surface mountable makes it easier to integrate this transistor onto circuit boards, saving space and simplifying the manufacturing process.
Small Signal Field Effect Transistors (FET) DMP1046UFDB-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
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DMP1046UFDB-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev Assembly Add 7/Dec/2018
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
BAV99
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
LM555CN
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
Bkc Semiconductors
ULN2003ADR
Texas Instruments
ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
2N2222A
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
2N7002
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
2N7002-7-F
Diodes Incorporated
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
Plessey Semiconductors Discrete Components Div
Other Transistors;
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
1N4148
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Silicon Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LL4148GS08
Temic Semiconductors
LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.
Microsemi
ROHM
LM358DR2G
Onsemi
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
BSS138BK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
Harris Semiconductor
LM107H/883
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
BC548B
Itt Components
NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Elements: 1;
LND150N3-GP005
Microchip Technology
LND150N3-GP005 by Microchip is a N-CHANNEL FET with 0.03A ID and 1000Ω RDS(on). Ideal for switching applications, it operates in depletion mode with built-in diode. Featuring 3 terminals, cylindrical package style, and 1pF Crss, it is designed for efficient performance in various electronic circuits.
AO3401AL
Alpha & Omega Semiconductor
AO3401AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 4.3A and RDS(on) of 0.044 ohm, making it suitable for various small outline surface mount designs.
ZVN2110A
ZVN2110A by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.32A ID, and 4 ohm RDS(on). Ideal for small signal applications in electronics due to its SILICON element material, ENHANCEMENT MODE operation, and low feedback capacitance of 8pF.
IRFD110PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): IN-LINE; Transistor Element Material: SILICON;
NTJD1155LT1G
NTJD1155LT1G by Onsemi is a Small Signal FET with N/P-Channel, ideal for switching applications. It features 8V DS Breakdown Voltage, 1.3A Drain Current, and 0.175ohm On Resistance. Operating from -55 to 150°C, it comes in a small outline package with Gull Wing terminals for surface mount assembly.
BSS138BKT116
ROHM BSS138BKT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.4A ID, and 0.81 ohm RDS(on). Ideal for switching applications in small outline packages. Operating in enhancement mode with GULL WING terminals, it's a versatile choice for compact designs.
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
2N7002P,235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; IEC-60134; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 1.6 ohm;
FDV305N
FDV305N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.9A Drain Current, and 0.22ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 3 terminals and operating up to 150°C.
2N7000/D26Z
2N7000/D26Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A ID. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 0.4W.
FDN352AP
FDN352AP by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.3A, 0.18 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a max Power Dissipation of 0.5W and can withstand temperatures up to 150°C.
2N7000
Bytesonic Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Minimum DS Breakdown Voltage: 60 V; No. of Elements: 1;
FDV301N-F169
FDV301N-F169 by Onsemi is a N-CHANNEL FET with 25V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max ID of 0.22A and RDS(on) of 4 ohm, it offers reliable performance in small outline packages.
ZVN3320FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
BSS138TA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Drain Current (Abs) (ID): .2 A;
BSD235CH6327XTSA1
Infineon Technologies
Infineon's BSD235CH6327XTSA1 is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Operating in enhancement mode, it has max ID of 0.95A and RDS(on) of 0.35Ω. Ideal for automotive applications meeting AEC-Q101 standard.
FDN302P
FDN302P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A and 0.055 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
FDC5614PD87Z
FDC5614PD87Z by Fairchild Semiconductor is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3A. The transistor operates in enhancement mode and has a max power dissipation of 1.6W at a max operating temperature of 150°C.
IRLML2803GTRPBF
Infineon's IRLML2803GTRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1.2A Drain Current, 0.25 ohm On Resistance, and 150°C Operating Temperature. Its GULL WING terminals and ENHANCEMENT MODE make it suitable for compact electronic devices requiring efficient power management.
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DMP10H4D2S-7
DMP10H4D2S-7 by Diodes Inc. is a P-channel FET with 100V DS breakdown voltage, 0.27A max drain current, and 4.2 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and -55°C min operating temp.
DMP1045U-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; Maximum Drain Current (ID): 3.3 A;
DMP10H4D2S-13
DMP10H4D2S-13 by Diodes Inc. is a P-channel FET with 100V DS breakdown voltage and 4.2 ohm max RDS(on). Ideal for switching applications, it operates in enhancement mode, has single configuration with built-in diode, and features Gull Wing terminals for surface mount assembly.
DMP1045UQ-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
DMP1055USW-7
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
DMP1022UWS-7
Small Signal Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e4;
DMP1012UFDF-13
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1;
DMP1045UCB4-7
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER;
DMP1012UFDF-7
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;
DMP1005UFDF-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE;
DMP1009UFDF-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
DMP1022UFDE-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .016 ohm;
DMP1012UCB9-7
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN SILVER COPPER; JESD-609 Code: e1;
DMP1009UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30; Package Shape: SQUARE;
DMP1022UFDEQ-7
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Time At Peak Reflow Temperature (s): 30;
DMP1009UFDFQ-13
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
DMP1022UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Additional Features: HIGH RELIABILITY; Package Shape: SQUARE;
DMP1022UFDF-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
DMP1005UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Finish: NICKEL PALLADIUM GOLD; Case Connection: DRAIN;
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