Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FDG6332C_F085 by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It's used for switching applications in enhancement mode, with max drain current of 0.7A and on-resistance of 0.3Ω. The package is SOT-23 style, surface mountable, operating up to 150°C.
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Authorized Procurement Solutions
iodParts Technologies Inc.
UHIMA Technologies
PLASTIC/EPOXY - Provides durability and protection for the transistor, making it a reliable choice.
N-CHANNEL AND P-CHANNEL - Offers flexibility for different circuit designs and applications.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - Allows for dual functionality in a single package, saving space and simplifying circuit design.
SWITCHING - Ideal for applications that require fast switching speeds and efficient power management.
YES - Easy to mount on PCBs, reducing assembly time and ensuring a secure connection.
20 V - Ensures reliable operation and protection against voltage spikes.
RECTANGULAR - Fits easily into compact layouts, maximizing space on the PCB.
GULL WING - Facilitates easy soldering and provides a secure connection in the circuit.
ENHANCEMENT MODE - Enables precise control over the transistor's conductivity, enhancing performance in various applications.
2 - Provides versatility for different circuit configurations and functions.
0.7 A - Handles high currents, making it suitable for power applications.
6 - Offers multiple connection points for versatile usage in various circuits.
0.3 W - Efficiently dissipates heat, ensuring stable performance under varying loads.
SMALL OUTLINE - Compact design saves space on the PCB, ideal for small electronic devices.
METAL-OXIDE SEMICONDUCTOR - Delivers high performance and reliability for demanding applications.
150 °C - Can withstand high temperatures without compromising performance, suitable for industrial applications.
SILICON - Provides excellent electrical properties and reliability for long-term performance.
MATTE TIN - Ensures good conductivity and solderability for a reliable connection in the circuit.
0.3 ohm - Low resistance minimizes power loss and improves efficiency in applications.
DUAL - Allows for easy connection to the circuit, enhancing the ease of installation and maintenance.
30 - Designed for easy and quick soldering during assembly, saving time and effort.
260 - Withstands high reflow temperatures during the manufacturing process, ensuring reliability and durability.
Small Signal Field Effect Transistors (FET) FDG6332C_F085 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
FDG6332C_F085 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.95
SB
8541.21.00.80
PCN Obsolescence/ EOL - Mult Dev LTB Ext 13/Jan/2022
PCN Design/Specification - Marking Lay-out Implementation 07/Oct/2022 Marking Lay-out Implementation 15/Nov/2021
PCN Assembly/Origin - Cancellation 09/Sep/2020
PCN Packaging - Binary Year Code Marking 15/Jan/2014 Mult Devices 24/Oct/2017
PCN Part Number - Mult Device Part Number Chg 30/May/2017
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
2N2222A
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
Unitrode
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Gec Plessey Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
PIC18F4550-I/P
Microchip Technology
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
LM358AN
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
1N4148W-T
Micro Commercial Components
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
MBRS3200T3G
Onsemi
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358DT
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
1554216002
Molex
WIRE AND CABLE;
MMSZ5245BT1G
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
FDV303N
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
Asi Semiconductor
Micropac Industries
2N7000
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Drain-Source On Resistance: 5 ohm; Terminal Form: WIRE;
BSS123-7-F
Diodes Incorporated
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; Minimum DS Breakdown Voltage: 60 V;
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
LND150N3-GP014
LND150N3-GP014 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max ID of 0.03A and RDS(on) of 1000Ω. With a temp range of -55 to 150°C, it features METAL-OXIDE SEMICONDUCTOR tech and a built-in diode for efficient performance.
BSS138TA
BSS138TA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. It has a 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
DMN6140L-13
DMN6140L-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 1.6A max drain current, ideal for switching applications. It features a single configuration with built-in diode, matte tin finish, and operates in enhancement mode. This small outline transistor has a max drain-source on resistance of 0.14 ohm and meets AEC-Q101 standards for automotive use.
NDS0605_NL
Fairchild Semiconductor's NDS0605_NL is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.18A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a RECTANGULAR PLASTIC package with GULL WING terminals and operates up to 150°C.
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
BSS123W
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
FDN5630_NL
Fairchild Semiconductor's FDN5630_NL is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.7A Drain Current, 0.1 ohm On Resistance, and operates in ENHANCEMENT MODE. The PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C temperature.
NDS7002A
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
2N7002T
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
2N7002K
Rectron
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
BSS84
Taitron Components
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 50 V;
FDN327N
FDN327N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.07 ohm On Resistance and can handle up to 0.46W power dissipation at 150°C.
SI2323DS-T1-E3
Vishay Intertechnology
SI2323DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.039 ohm On Resistance. The transistor's small outline package and -55 to 150 °C temperature range make it versatile for various electronic designs.
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
FDN306P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
BSS138LT3
Leshan Radio
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
FDG6303N
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Additional Features: LOGIC LEVEL COMPATIBLE; Peak Reflow Temperature (C): 260;
FDG6303N by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and 0.45 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with max ID of 0.5A and 25V DS breakdown voltage. This small outline transistor has a max temp of 150°C and -55°C min temp.
FDG6332C
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (Abs) (ID): .6 A; Package Shape: RECTANGULAR;
The Onsemi FDG6332C is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include max drain current of 0.7A, min DS breakdown voltage of 20V, and max power dissipation of 0.3W.
FDG6301N
The Onsemi FDG6301N is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 0.22A Drain Current, and 4 ohm On Resistance. With GULL WING terminals and SMALL OUTLINE package style, it operates in ENHANCEMENT MODE at up to 150°C.
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
FDG6332C-F085
FDG6332C-F085 by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm on-resistance. Suitable for surface mount with Gull Wing terminals in a small outline package.
FDG6332C-F085P
Onsemi's FDG6332C-F085P is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm RDS(on). Operating from -55 to 150°C, this MOSFET is AEC-Q101 compliant and comes in a small outline package.
FDG6332C_NL
FDG6332C_NL by Fairchild Semiconductor is a Small Signal FET with N/P-Channel types, ideal for switching applications. It features 2 elements with built-in diode in a rectangular package with Gull Wing terminals. Operating in enhancement mode, it has a max drain current of 0.7A and max power dissipation of 0.3W at 150°C.
FDG6335N
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): .7 A;
The Onsemi FDG6335N is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 0.7A, Max Power Dissipation of 0.3W, and Max Operating Temperature of 150°C. This small outline transistor has a Matte Tin finish and operates in Enhancement Mode.
FDG6303N_NL
FDG6303N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It features a min DS Breakdown Voltage of 25V, Max Power Dissipation of 0.3W, and Max Operating Temperature of 150°C. This small outline transistor has GULL WING terminals and operates in ENHANCEMENT MODE.
FDG6303ND87Z
FDG6303ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 25V, Max Power Dissipation of 0.3W, and Max Operating Temperature of 150°C. This small outline transistor has GULL WING terminals and operates in ENHANCEMENT MODE.
FDG6303N-F169
Small Signal Field-Effect Transistors;
FDG6301N-F085P
FDG6301N-F085P by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and 25V DS breakdown voltage. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and -55°C min operating temperature. Features include 4Ω max drain-source resistance, 0.22A max drain current, and matte tin terminal finish.
FDG6301N_F085
Fairchild Semiconductor's FDG6301N_F085 is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It has a max drain current of 0.22A, on-resistance of 4 ohm, and operates at up to 150°C. The transistor is in a small outline package with gull wing terminals for surface mount assembly.
FDG6301N-F085
FDG6301N-F085 by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.22A, operating at an enhancement mode with a breakdown voltage of 25V. With a small outline package style and peak reflow temperature of 260°C, it offers efficient performance in various electronic devices.
FDG6301ND87Z
FDG6301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It features 25V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. With GULL WING terminals in a SMALL OUTLINE package, it offers 0.22A Drain Current and 4Ω On Resistance.
FDG6301N_NL
FDG6301N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 0.3W Power Dissipation, and 4 ohm Drain-Source Resistance. This small outline transistor operates in ENHANCEMENT MODE at up to 150°C temperature.
FDG6332CD87Z
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 6;
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