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FDG6301N_F085

Fairchild Semiconductor

FDG6301N_F085 by Fairchild Semiconductor

Fairchild Semiconductor's FDG6301N_F085 is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It has a max drain current of 0.22A, on-resistance of 4 ohm, and operates at up to 150°C. The transistor is in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.684

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Rochester

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Overview

Enhance your electronic devices with the FDG6301N_F085 Small Signal Field Effect Transistor by Fairchild Semiconductor. This high-quality component boasts a sleek rectangular package body and N-channel configuration, making it ideal for switching applications. With a maximum drain current of 0.22A and operating temperature of 150°C, this transistor offers reliable performance and durability. Trust in Fairchild Semiconductor's expertise in semiconductor technology to bring value and efficiency to your projects. Elevate your designs with the FDG6301N_F085 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and long-term reliability of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer high efficiency in switching applications, making this product a good choice for various electronic devices.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for versatile circuit design and efficient power handling.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor offers fast response times and low power consumption.

Surface Mount: YES

Surface mount packaging saves space on PCBs and offers easy automated assembly, making it an ideal choice for compact electronic devices.

Minimum DS Breakdown Voltage: 25 V

With a high breakdown voltage, this transistor can withstand voltage spikes and surges, ensuring reliable operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and facilitates proper heat dissipation.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and secure PCB mounting, ensuring stable connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers precise control over the transistor's conductance, enhancing performance in various applications.

No. of Elements: 2

With two elements, this transistor can handle multiple functions within a single package, simplifying circuit designs and reducing component count.

Maximum Drain Current (Abs) (ID): 0.22 A

This high drain current rating allows for efficient power handling and reliable operation in demanding applications.

No. of Terminals: 6

The six terminals provide multiple connection points for versatile circuit integration and enhanced functionality.

Maximum Power Dissipation (Abs): 0.3 W

With a high power dissipation rating, this transistor can handle heat efficiently, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and is ideal for compact electronic devices with limited real estate.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this transistor a superior choice for various applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand harsh environments and ensure stable operation in demanding conditions.

Transistor Element Material: SILICON

Silicon material provides high performance, efficiency, and reliability, making this transistor an excellent choice for various electronic applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers corrosion resistance and ensures reliable electrical connections for long-term performance.

Maximum Drain-Source On Resistance: 4 ohm

The low drain-source on resistance reduces power losses and improves efficiency in switching applications.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit design and ensure secure connections for reliable operation.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering and reliable performance during assembly.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can handle assembly processes efficiently and ensure long-term reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDG6301N_F085 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

.22 A

Maximum Drain Current (ID):

.22 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDG6301N_F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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