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DMP1022UFDF-7

Diodes Incorporated

DMP1022UFDF-7 by Diodes Incorporated

DMP1022UFDF-7 by Diodes Inc. is a P-channel FET with 12V DS breakdown voltage, 9.5A max drain current, and 0.026 ohm max on-resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and -55°C to 150°C operating range.

Median Price

$0.307

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,000 parts In-Stock

1+ parts

$0.307

100+ parts

$0.204

1k+ parts

$0.134

10k+ parts

-

3,000

$0.307

$0.204

$0.134

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Verical

USA . 693,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.148

693,000

-

-

-

$0.148

RS (Exports)

UK . 2,550 parts In-Stock

1+ parts

-

100+ parts

$0.363

1k+ parts

$0.201

10k+ parts

$0.152

2,550

-

$0.363

$0.201

$0.152

Farnell

UK . 220 parts In-Stock

1+ parts

-

100+ parts

$0.174

1k+ parts

$0.137

10k+ parts

$0.124

220

-

$0.174

$0.137

$0.124

Element14

Singapore . 220 parts In-Stock

1+ parts

-

100+ parts

$0.310

1k+ parts

$0.243

10k+ parts

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220

-

$0.310

$0.243

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Distributors (In-Stock)

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NAC Semi

USA . 402,000 parts In-Stock

1+ parts

-

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402,000

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 100,982 parts In-Stock

1+ parts

$0.126

100+ parts

-

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100,982

$0.126

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Component Stockers USA

USA . 62,172 parts In-Stock

1+ parts

$0.170

100+ parts

$0.150

1k+ parts

$0.130

10k+ parts

$0.120

62,172

$0.170

$0.150

$0.130

$0.120

Aztec Data Supply Inc.

USA . 100 parts In-Stock

1+ parts

$1.340

100+ parts

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100

$1.340

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Kepictronics

USA . 66,540 parts In-Stock

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66,540

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Eastek

USA . 18,000 parts In-Stock

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18,000

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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$0.165

12,000

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$0.165

Perfect Parts

USA . 10,203 parts In-Stock

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10,203

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Continental Prestige Electronics

USA . 2,215 parts In-Stock

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100+ parts

$0.268

1k+ parts

$0.163

10k+ parts

$0.142

2,215

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$0.268

$0.163

$0.142

Netroflash

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Discover the cutting-edge technology of the DMP1022UFDF-7 by Diodes Incorporated, a top-tier manufacturer in the field of Small Signal Field Effect Transistors. Ideal for switching applications, this P-CHANNEL transistor offers enhanced performance and reliability. With a high maximum drain current and low on-resistance, this transistor ensures efficient operation while maintaining a small footprint. Experience seamless integration with its surface mount design and robust construction. Trust Diodes Incorporated to provide unmatched quality and value in every product, setting new standards in the industry. Elevate your electronic projects with the DMP1022UFDF-7 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides a durable and lightweight casing for the FET, making it easy to handle and install.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their high input impedance and low input capacitance, making them ideal for switching applications where low power consumption is important.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and helps protect the circuit from reverse voltage spikes, increasing the reliability of the FET.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can quickly and accurately turn on and off, making it ideal for use in power management circuits.

Surface Mount: YES

Being surface mountable, this FET can be easily integrated onto printed circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 12 V

The FET's minimum drain-source breakdown voltage of 12V ensures reliable and safe operation within specified limits.

Package Shape: SQUARE

The square package shape allows for efficient use of space on a PCB and easy alignment during assembly.

Terminal Form: NO LEAD

The no-lead terminal form simplifies the manufacturing process and reduces the risk of solder joint failures commonly associated with leads.

Operating Mode: ENHANCEMENT MODE

Enhancement-mode FETs are easier to control and have lower leakage current, making them suitable for high-speed switching applications.

No. of Terminals: 6

With 6 terminals, this FET offers more flexibility in terms of connection options and circuit design.

Maximum Power Dissipation (Abs): 2.1 W

The high maximum power dissipation of 2.1W ensures the FET can handle high current loads without overheating or failing.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for densely packed circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers low gate capacitance, fast switching speeds, and high input impedance, making this FET ideal for various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high-temperature environments without compromising performance.

Transistor Element Material: SILICON

Silicon is a reliable and widely used material for transistor elements, providing good thermal conductivity and electrical properties for stable operation.

Minimum Operating Temperature: -55 °C

The FET's minimum operating temperature of -55°C allows for reliable performance in extreme cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish offers excellent solderability, corrosion resistance, and electrical conductivity for reliable connections.

Maximum Drain Current (ID): 9.5 A

The high maximum drain current rating of 9.5A allows the FET to handle high-power applications with ease.

Maximum Drain-Source On Resistance: 0.026 ohm

The low drain-source on resistance results in minimal power loss and high efficiency in switching operations.

Terminal Position: DUAL

Dual terminal positioning offers more versatility in circuit layout and connection options.

Case Connection: DRAIN

The case connection at the drain terminal simplifies circuit design and offers better thermal management for the FET.

Maximum Time At Peak Reflow Temperature (s): 30

The FET can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering and board assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the FET can undergo solder reflow processes without affecting its electrical or mechanical properties.

Maximum Feedback Capacitance (Crss): 467 pF

The low feedback capacitance helps reduce signal distortion and improve high-frequency performance in switching applications.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 automotive quality standard ensures the FET meets rigorous reliability and performance requirements for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP1022UFDF-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

9.5 A

Maximum Drain-Source On Resistance:

.026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

467 pF

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP1022UFDF-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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