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SI1308EDL-T1-GE3

Vishay Intertechnology

SI1308EDL-T1-GE3 by Vishay Intertechnology

SI1308EDL-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 1.4A max drain current. Ideal for switching applications, it features a built-in diode, 0.132 ohm max on resistance, and operates in enhancement mode at up to 150°C.

Median Price

$0.108

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Newark

USA . 2,642 parts In-Stock

1+ parts

$0.656

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$0.280

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$0.201

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$0.656

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Element14

Singapore . 94,455 parts In-Stock

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$0.206

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Avnet

USA . 48,000 parts In-Stock

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$0.092

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TTI Europe

Germany . 15,000 parts In-Stock

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Arrow

USA . 12,000 parts In-Stock

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Verical

USA . 12,000 parts In-Stock

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Future Electronics

Canada . 9,000 parts In-Stock

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$0.103

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Farnell

UK . 9,000 parts In-Stock

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$0.084

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$0.084

Distributors (In-Stock)

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IBS Electronics

USA . 45,000 parts In-Stock

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$0.178

100+ parts

$0.156

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$0.078

45,000

$0.178

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$0.078

Nova Conductors

Japan . 50 parts In-Stock

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$0.287

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50

$0.287

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Maritex

Poland . 114,000 parts In-Stock

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$0.379

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$0.190

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$0.127

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$0.379

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$0.127

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TME

Poland . 761 parts In-Stock

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$0.590

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$0.241

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$0.154

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$0.146

761

$0.590

$0.241

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$0.146

Cyclops Electronics Ltd

UK . 310,722 parts In-Stock

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Chip Stock

USA . 84,770 parts In-Stock

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Vyrian

USA . 56,889 parts In-Stock

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ComSIT Distribution GmbH

Germany . 29,980 parts In-Stock

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Bristol Electronics

USA . 21,161 parts In-Stock

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ComSIT USA

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NAC Semi

USA . 6,000 parts In-Stock

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$0.193

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Semtec, LLC

USA . 4,400 parts In-Stock

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NexGen Digital

USA . 3,545 parts In-Stock

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Rutronik

Germany . 3,000 parts In-Stock

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$0.140

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Classic Components Corporation

USA . 2,997 parts In-Stock

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Prism Electronics

USA . 40 parts In-Stock

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Sunrise Surplus Inc.

USA . 9 parts In-Stock

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Semicontronic

India . 73,606 parts In-Stock

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$0.076

100+ parts

$0.074

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$0.074

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$0.074

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Ampacity Inc.

Singapore . 51,373 parts In-Stock

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Argo Parts USA

USA . 1,543 parts In-Stock

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$0.208

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Modulus Dynamics

Lithuania . 7,423 parts In-Stock

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$0.219

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Corohmni

South Africa . 203 parts In-Stock

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Advanced Electronics

New Zealand . 504 parts In-Stock

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504

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Continental Prestige Electronics

USA . 98,367 parts In-Stock

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$0.497

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$0.286

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$0.275

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CoreStaff

Japan . 3,000 parts In-Stock

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$1.460

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$0.262

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$0.223

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$1.460

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Aztec Data Supply Inc.

USA . 173 parts In-Stock

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$1.900

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Perfect Parts

USA . 188,581 parts In-Stock

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RC Electronics

USA . 80,575 parts In-Stock

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S.R.D Solutions

India . 35,000 parts In-Stock

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Eastek

USA . 33,000 parts In-Stock

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$0.290

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Lucentia Tech

USA . 29,156 parts In-Stock

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$0.215

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$0.210

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$0.210

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Robosynatics

Brazil . 16,577 parts In-Stock

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Epart123

USA . 9,000 parts In-Stock

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$0.260

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Kepictronics

USA . 6,280 parts In-Stock

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Authorized Procurement Solutions

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iodParts Technologies Inc.

India . 3,475 parts In-Stock

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Overview

Elevate your electronic designs with the Vishay Intertechnology SI1308EDL-T1-GE3 Small Signal Field Effect Transistor. Crafted with precision and expertise, this N-CHANNEL transistor offers unparalleled quality and reliability for switching applications. Its compact design and built-in diode make it ideal for a wide range of projects. Experience seamless performance and efficiency with this enhancement mode transistor that delivers maximum power dissipation and minimum DS breakdown voltage. Trust Vishay Intertechnology to provide top-tier components that elevate your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and efficiency compared to P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and can prevent reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid on/off transitions effectively.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on circuit boards.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this transistor can withstand higher voltages without damage.

Package Shape: RECTANGULAR

Rectangular shape allows for compact placement on circuit boards, saving space.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and secure connection to the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors require less control power and have higher efficiency.

Maximum Drain Current (Abs) (ID): 1.4 A

High maximum drain current allows for handling larger loads without overheating.

No. of Terminals: 3

Simplified 3-terminal design for easy integration into circuits and wiring.

Maximum Power Dissipation (Abs): 0.5 W

Efficient power dissipation capability ensures the transistor remains cool during operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers space-saving benefits for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance and reliability for the transistor.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, making it suitable for demanding applications.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and are widely used in the industry.

Terminal Finish: MATTE TIN

Matte tin finish on terminals ensures good conductivity and solderability.

Maximum Drain-Source On Resistance: 0.132 ohm

Low drain-source on resistance minimizes power loss and improves efficiency.

Terminal Position: DUAL

Dual terminal position allows for flexible installation options in the circuit layout.

Maximum Time At Peak Reflow Temperature (s): 30

Capable of withstanding peak reflow temperature for a specified duration, ensuring reliability during soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for robust soldering and assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI1308EDL-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

1.4 A

Maximum Drain Current (ID):

1.4 A

Maximum Drain-Source On Resistance:

.132 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI1308EDL-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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