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SI1302DL-T1-GE3

Vishay Intertechnology

SI1302DL-T1-GE3 by Vishay Intertechnology

SI1302DL-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 0.6A max drain current. Ideal for enhancement mode operation, it features a built-in diode in a small outline package. Suitable for applications requiring high power dissipation and operating temperatures up to 150°C.

Median Price

$0.205

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Newark

USA . 374 parts In-Stock

1+ parts

$0.052

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$0.052

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$0.052

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374

$0.052

$0.052

$0.052

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Mouser Electronics

USA . 18,582 parts In-Stock

1+ parts

$0.500

100+ parts

$0.268

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$0.171

10k+ parts

$0.118

18,582

$0.500

$0.268

$0.171

$0.118

DigiKey

USA . 3,510 parts In-Stock

1+ parts

$0.690

100+ parts

$0.273

1k+ parts

$0.186

10k+ parts

$0.139

3,510

$0.690

$0.273

$0.186

$0.139

EBV Elektronik

Germany . 15,000 parts In-Stock

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15,000

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Verical

USA . 4,745 parts In-Stock

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$0.278

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$0.176

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$0.108

4,745

-

$0.278

$0.176

$0.108

Farnell

UK . 3,265 parts In-Stock

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$0.205

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$0.137

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3,265

-

$0.205

$0.137

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Element14

Singapore . 3,265 parts In-Stock

1+ parts

-

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$0.337

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$0.243

10k+ parts

$0.195

3,265

-

$0.337

$0.243

$0.195

Arrow

USA . 3,000 parts In-Stock

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$0.110

3,000

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$0.110

Chip1Stop

Japan . 3,000 parts In-Stock

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$0.203

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$0.162

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3,000

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$0.203

$0.162

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Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

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$0.124

3,000

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$0.124

Distributors (In-Stock)

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Vyrian

USA . 25,351 parts In-Stock

1+ parts

$0.072

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$0.072

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TME

Poland . 2,970 parts In-Stock

1+ parts

$0.500

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$0.260

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$0.160

10k+ parts

$0.154

2,970

$0.500

$0.260

$0.160

$0.154

Chip Stock

USA . 15,000 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

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$0.253

12,000

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$0.253

Bristol Electronics

USA . 9,000 parts In-Stock

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Rebound Electronics

UK . 3,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Ampacity Inc.

Singapore . 9,785 parts In-Stock

1+ parts

$0.093

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9,785

$0.093

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Continental Prestige Electronics

USA . 3,566 parts In-Stock

1+ parts

$0.438

100+ parts

$0.243

1k+ parts

$0.148

10k+ parts

$0.113

3,566

$0.438

$0.243

$0.148

$0.113

Corohmni

South Africa . 213 parts In-Stock

1+ parts

$1.628

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213

$1.628

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 47,120 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,957 parts In-Stock

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Eastek

USA . 15,000 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Amble Industries

USA . 9,000 parts In-Stock

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Argo Parts USA

USA . 4,990 parts In-Stock

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4,990

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Netroflash

USA . 500 parts In-Stock

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500

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Overview

Discover the superior performance and reliability of Vishay Intertechnology's SI1302DL-T1-GE3, a top-of-the-line Small Signal Field Effect Transistor. With a sleek rectangular package design and N-channel configuration, this transistor is ideal for a wide range of applications. From enhancing circuit efficiency to improving signal processing, this transistor offers unparalleled value and benefits. Trust Vishay Intertechnology to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs have better performance and lower ON-resistance compared to P-channel FETs, making them a good choice for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for simplified circuit design and adds flexibility for different applications.

Surface Mount: YES

Surface mount technology makes it easier to assemble and mount the transistor onto a PCB, saving space and reducing production costs.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage ensures robustness and protection against voltage spikes and overloads.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and low on-resistance, making them suitable for high-speed switching applications.

Maximum Drain Current (Abs) (ID): 0.6 A

This high drain current rating allows for handling of higher loads and power dissipation.

Maximum Power Dissipation (Abs): 0.28 W

With a high power dissipation capability, this transistor can handle heat efficiently and maintain stable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers low input capacitance and high switching speeds, making it suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable performance in various environments and conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI1302DL-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.6 A

Maximum Drain Current (ID):

.6 A

Maximum Drain-Source On Resistance:

.48 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SI1302DL-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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