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SI1302DL-T1-BE3

Vishay Intertechnology

SI1302DL-T1-BE3 by Vishay Intertechnology

Vishay Intertechnology's SI1302DL-T1-BE3 is a N-CHANNEL FET with 30V DS Breakdown Voltage. It operates in Enhancement Mode, has 0.6A ID, and 0.48 ohm RDS(on). Ideal for small signal applications requiring high power dissipation up to 0.28W at 150°C.

Median Price

$0.214

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,729 parts In-Stock

1+ parts

$0.112

100+ parts

$0.112

1k+ parts

$0.112

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-

1,729

$0.112

$0.112

$0.112

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Farnell

UK . 2,830 parts In-Stock

1+ parts

$0.480

100+ parts

$0.307

1k+ parts

$0.241

10k+ parts

-

2,830

$0.480

$0.307

$0.241

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DigiKey

USA . 3,001 parts In-Stock

1+ parts

$0.690

100+ parts

$0.273

1k+ parts

$0.186

10k+ parts

$0.139

3,001

$0.690

$0.273

$0.186

$0.139

TTI

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.171

51,000

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$0.171

Mouser Electronics

USA . 21,198 parts In-Stock

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$0.125

21,198

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-

$0.125

Element14

Singapore . 2,830 parts In-Stock

1+ parts

-

100+ parts

$0.256

1k+ parts

$0.143

10k+ parts

$0.133

2,830

-

$0.256

$0.143

$0.133

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 73,864 parts In-Stock

1+ parts

$0.124

100+ parts

-

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73,864

$0.124

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Bristol Electronics

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

$0.356

1k+ parts

$0.142

10k+ parts

$0.096

21,000

-

$0.356

$0.142

$0.096

Dan-Mar Components

USA . 21,000 parts In-Stock

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21,000

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Martec Srl

Italy . 59 parts In-Stock

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59

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Distributors (Availability)

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

1+ parts

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60,000

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QUARKTWIN TECHNOLOGY LTD

USA . 3,993 parts In-Stock

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3,993

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Overview

Discover the power of the Vishay Intertechnology SI1302DL-T1-BE3 Small Signal Field Effect Transistor. With a focus on quality and precision, Vishay Intertechnology has crafted a product that exceeds expectations in performance and reliability. Ideal for a variety of applications, this N-channel transistor offers exceptional value and benefits to customers seeking efficiency and durability in their electronic designs. Upgrade your projects with the superior technology of Vishay Intertechnology and experience the advantages of the SI1302DL-T1-BE3 firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the FET, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs have lower resistance and higher electron mobility compared to P-channel FETs, making them more efficient for many circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can provide additional functionality in certain applications.

Surface Mount: YES

This FET is designed for surface mount applications, which can save space on the PCB and facilitate automated assembly processes.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages without breakdown, providing reliability in operation.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used and allows for easy mounting and integration into circuit designs.

Terminal Form: GULL WING

The gull wing terminal form provides secure soldering connections and is suitable for surface mount applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs require a positive voltage on the gate to turn on, providing better control over the circuit operation.

Maximum Power Dissipation (Abs): 0.28 W

The low maximum power dissipation of 0.28W allows for efficient operation and minimizes heat generation in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor FETs offer high input impedance, low noise, and fast switching speeds, making them ideal for many applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable operation in various environmental conditions.

Transistor Element Material: SILICON

Silicon-based FETs offer high switching speeds, low leakage current, and good thermal stability, making them a popular choice in electronics.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows for use in cold environments without compromising performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Maximum Drain Current (ID): 0.6 A

With a maximum drain current of 0.6A, this FET can handle higher current loads in the circuit without overheating.

Maximum Drain-Source On Resistance: 0.48 ohm

The low maximum drain-source on resistance of 0.48 ohm minimizes voltage drop and power loss in the FET, improving efficiency.

Terminal Position: DUAL

Having dual terminal positions provides flexibility in circuit design and allows for easier integration into various layouts.

Maximum Time At Peak Reflow Temperature (s): 30

The FET can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering and reliability in assembly processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper solder melting and joint formation during surface mount assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI1302DL-T1-BE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.6 A

Maximum Drain-Source On Resistance:

.48 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SI1302DL-T1-BE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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