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NUD3048MT1G

Onsemi

NUD3048MT1G by Onsemi

NUD3048MT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a built-in diode and resistor, operates in enhancement mode, and has a max drain current of 1.2A. With surface mount capability and small outline package style, it offers high performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,583 parts In-Stock

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Quantum Digital Technology

USA . 2,900 parts In-Stock

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Bristol Electronics

USA . 1,104 parts In-Stock

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Atlantic Semiconductor

USA . 1,104 parts In-Stock

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Digiode

USA . 321 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 791 parts In-Stock

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$21.850

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Component Stockers USA

USA . 324 parts In-Stock

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$99.990

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Kepictronics

USA . 75,000 parts In-Stock

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Metaverse IC Inc.

Canada . 69,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,806 parts In-Stock

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Kulean Microsystems

USA . 8,146 parts In-Stock

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TANS Electronics

Latvia . 5,970 parts In-Stock

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Problanco Electronics

Mexico . 5,271 parts In-Stock

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SupplyDigital Components

Austria . 2,725 parts In-Stock

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Corphita

USA . 1,590 parts In-Stock

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UHIMA Technologies

Türkiye . 791 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 103 parts In-Stock

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Overview

Experience the power of innovation with the NUD3048MT1G by Onsemi. As a leader in the industry, Onsemi delivers top-quality Small Signal Field Effect Transistors that are perfect for a variety of applications, from switching to enhancement mode operation. With a built-in diode and resistor, this N-CHANNEL transistor offers unparalleled value and benefits to customers. Trust in Onsemi's expertise and choose the NUD3048MT1G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and can withstand a wide range of temperatures, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs are commonly used for switching applications, providing better performance and efficiency compared to P-Channel FETs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient performance in controlling electronic circuits.

Minimum DS Breakdown Voltage: 100 V

Provides a high breakdown voltage, ensuring reliability and preventing damage to the transistor in high voltage applications.

Maximum Drain Current (Abs): 1.2 A

Capable of handling a maximum drain current of 1.2 A, making it suitable for various low to medium power applications.

Maximum Power Dissipation (Abs): 1.56 W

With a maximum power dissipation of 1.56 W, this FET can handle heat effectively without overheating, ensuring long-term reliability.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150 °C, making it suitable for high temperature environments and industrial applications.

Maximum Drain-Source On Resistance: 0.82 ohm

Low on-resistance minimizes power loss and improves efficiency in the circuit, making it an energy-efficient choice for applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NUD3048MT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

1.2 A

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.82 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NUD3048MT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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