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NTF3055-100T1G

Onsemi

NTF3055-100T1G by Onsemi

NTF3055-100T1G by Onsemi is a N-channel FET with 60V DS breakdown voltage and 3A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 2.1W, this MOSFET has a peak reflow temperature of 260°C and matte tin terminal finish.

Median Price

$0.439

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1k+

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Newark

USA . 930 parts In-Stock

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$0.298

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$0.298

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930

$0.298

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Chip1Stop

Japan . 50 parts In-Stock

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$1.140

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$0.614

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$1.140

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Mouser Electronics

USA . 11,751 parts In-Stock

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$1.550

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$0.648

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$0.431

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11,751

$1.550

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DigiKey

USA . 7,719 parts In-Stock

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$1.550

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$0.647

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$0.507

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Avnet

USA . 191,000 parts In-Stock

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Arrow

USA . 98,000 parts In-Stock

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Verical

USA . 98,000 parts In-Stock

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Future Electronics

Canada . 25,000 parts In-Stock

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$0.430

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$0.410

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RS (Exports)

UK . 3,990 parts In-Stock

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$0.202

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Master Electronics

USA . 2,000 parts In-Stock

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$0.320

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$0.305

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$0.293

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Rochester

USA . 1 parts In-Stock

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$0.455

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$0.377

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Digiode

USA . 913 parts In-Stock

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Nova Conductors

Japan . 56 parts In-Stock

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$0.446

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Bristol Electronics

USA . 3,000 parts In-Stock

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$0.863

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$0.319

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$0.224

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3,000

$0.863

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$0.224

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Maritex

Poland . 1,821 parts In-Stock

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$0.899

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$0.514

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$0.409

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$0.899

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TME

Poland . 332 parts In-Stock

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$1.340

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$0.617

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$0.417

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Chip Stock

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IBS Electronics

USA . 41,000 parts In-Stock

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$0.449

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$0.405

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Infinite Electronics LLP

India . 35,000 parts In-Stock

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NAC Semi

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Vyrian

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LIBRA Elektronik GmbH

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J2 Sourcing AB

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Connector Distribution Corp

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Right Parts Inc.

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Component Sense

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ComSIT USA

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Connect4Technologies Inc.

Canada . 127 parts In-Stock

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LWI Electronics Inc

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Semtec, LLC

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Prism Electronics

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Semicontronic

India . 41,446 parts In-Stock

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$0.242

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$0.236

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$0.235

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41,446

$0.242

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$0.235

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Decca Corp

Germany . 20,787 parts In-Stock

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$0.242

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$0.237

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$0.235

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Corphita

USA . 1,975 parts In-Stock

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Corohmni

South Africa . 358 parts In-Stock

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Continental Prestige Electronics

USA . 4,291 parts In-Stock

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$0.446

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$0.437

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Argo Parts USA

USA . 3,483 parts In-Stock

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$0.446

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$0.433

3,483

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Netroflash

USA . 50 parts In-Stock

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$0.446

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$0.424

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$0.415

50

$0.446

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$0.415

Ampacity Inc.

Singapore . 17,345 parts In-Stock

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$0.530

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Aztec Data Supply Inc.

USA . 4,246 parts In-Stock

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$1.673

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Advanced Electronics

New Zealand . 192 parts In-Stock

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$1.890

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$1.796

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$1.890

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Microchip USA

USA . 885 parts In-Stock

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$5.785

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Perfect Parts

USA . 312,074 parts In-Stock

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RC Electronics

USA . 65,773 parts In-Stock

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Lixinc

USA . 14,644 parts In-Stock

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SupplyDigital Components

Austria . 7,346 parts In-Stock

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Kulean Microsystems

USA . 6,298 parts In-Stock

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Problanco Electronics

Mexico . 4,863 parts In-Stock

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iodParts Technologies Inc.

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 2,228 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 1,000 parts In-Stock

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Futuretech Components

Singapore . 509 parts In-Stock

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GreenTree Electronics

Israel . 95 parts In-Stock

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UHIMA Technologies

Türkiye . 3 parts In-Stock

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Overview

Enhance your electronic projects with the NTF3055-100T1G by Onsemi, a top-quality N-channel FET that offers reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for switching applications, thanks to its built-in diode and enhancement mode operation. With a maximum drain current of 3A and a low on resistance of 0.11 ohm, this transistor delivers exceptional power dissipation and efficiency. Whether you're a hobbyist or a professional, the NTF3055-100T1G provides value, reliability, and superior performance for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this FET lightweight and durable.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance and efficiency compared to P-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protects against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in these scenarios.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage provides protection against voltage spikes and surges.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on the circuit board.

Terminal Form: GULL WING

The gull wing terminals make soldering and connection easier and more secure.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control of the transistor's activity.

Maximum Pulsed Drain Current (IDM): 9 A

High pulsed drain current rating ensures the FET can handle sudden surges of power.

Avalanche Energy Rating (EAS): 74 mJ

High avalanche energy rating means the FET can withstand significant energy spikes.

Maximum Drain Current (Abs) (ID): 3 A

High drain current capability allows for reliable performance in various applications.

No. of Terminals: 4

4 terminals provide flexibility and options for connecting the FET within a circuit.

Maximum Power Dissipation (Abs): 2.1 W

The high power dissipation rating ensures the FET can handle heat effectively.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high-speed switching and low power consumption.

Maximum Operating Temperature: 175 °C

High operating temperature range makes this FET suitable for a wide range of environments.

Transistor Element Material: SILICON

Silicon materials offer high performance and reliability in transistors.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures good electrical connections.

Maximum Drain-Source On Resistance: 0.11 ohm

Low on-resistance minimizes power loss and improves efficiency.

Terminal Position: DUAL

Dual terminal position allows for versatile connection options within a circuit.

Case Connection: DRAIN

Drain connection configuration provides efficient current flow and heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperature for up to 30 seconds during assembly process.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper soldering and reliability.

Maximum Feedback Capacitance (Crss): 155 pF

Low feedback capacitance minimizes signal distortion and interference.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTF3055-100T1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

74 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.11 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

155 pF

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

9 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTF3055-100T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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