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NTF3055-100T3G

Onsemi

NTF3055-100T3G by Onsemi

NTF3055-100T3G by Onsemi is a small signal FET with N-channel polarity. It features a max drain current of 3A, operating in enhancement mode for switching applications. With a package style of small outline and Gull Wing terminals, it offers a max power dissipation of 2.1W at an operating temperature of 175°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 79,580 parts In-Stock

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Vyrian

USA . 8,552 parts In-Stock

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J2 Sourcing AB

Sweden . 4,140 parts In-Stock

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Digiode

USA . 2,044 parts In-Stock

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Nova Conductors

Japan . 16 parts In-Stock

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Aztec Data Supply Inc.

USA . 851 parts In-Stock

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$1.430

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851

$1.430

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AZTECH Wire

Italy . 194 parts In-Stock

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$12.325

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Microchip USA

USA . 448 parts In-Stock

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$16.630

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Ampacity Inc.

Singapore . 435 parts In-Stock

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$30.050

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Kepictronics

USA . 38,135 parts In-Stock

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SupplyDigital Components

Austria . 7,793 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,543 parts In-Stock

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TANS Electronics

Latvia . 5,276 parts In-Stock

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Problanco Electronics

Mexico . 4,371 parts In-Stock

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Kulean Microsystems

USA . 3,766 parts In-Stock

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Argo Parts USA

USA . 3,261 parts In-Stock

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Continental Prestige Electronics

USA . 2,160 parts In-Stock

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Perfect Parts

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Bastille Electronics

Australia . 450 parts In-Stock

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Corphita

USA . 428 parts In-Stock

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UHIMA Technologies

Türkiye . 400 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality NTF3055-100T3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Field Effect Transistors that excel in switching applications. With a built-in diode and N-channel configuration, this transistor offers reliable performance and efficient power management. Whether you're working on automotive electronics or industrial automation, the NTF3055-100T3G provides the value, benefits, and advantages you need to take your projects to the next level. Trust Onsemi for quality components that make a difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in switching applications and offer low ON resistance.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for efficient switching and protection against reverse currents.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off states.

Surface Mount: YES

Surface mount feature enables easy installation on printed circuit boards, saving space and facilitating automated assembly.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, the transistor can handle high voltage applications.

Maximum Drain Current (ID): 3 A

Capable of supporting a maximum drain current of 3A, suitable for moderate power applications.

Maximum Power Dissipation (Abs): 2.1 W

High power dissipation rating allows the transistor to handle high power levels without overheating.

Maximum Operating Temperature: 175 °C

Operates effectively in high-temperature environments, ensuring reliability under varying conditions.

Maximum Drain-Source On Resistance: 0.11 ohm

Low drain-source on resistance results in minimal power loss and efficient operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTF3055-100T3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

74 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.11 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

155 pF

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

9 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTF3055-100T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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