Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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ZXMN6A07FTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.93A Drain Current, and 0.3 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
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The plastic/epoxy material makes the package lightweight and durable, perfect for portable or handheld devices.
N-channel transistors generally have higher mobility and faster switching times compared to P-channel transistors, making this product suitable for high-speed switching applications.
The built-in diode allows for efficient switching operation and can protect against reverse polarity or inductive kickback, enhancing the reliability of the circuit.
Designed specifically for switching applications, this transistor provides fast and reliable switching performance.
Surface mount capability allows for easy and compact PCB assembly, saving space and reducing manufacturing costs.
With a high maximum drain current rating, this transistor can handle higher loads, making it suitable for a wide range of applications.
Low on-resistance ensures minimal power loss and heat generation, improving efficiency and overall performance of the circuit.
Small Signal Field Effect Transistors (FET) ZXMN6A07FTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
ZXMN6A07FTA Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev Assembly Chgs 29/May/2020
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
SS14
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
LM358N
Texas Instruments
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
DS18B20Z+
Analog Devices
DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
BSS138
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;
LM358M
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
1N4148
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Hitano Enterprise
FDC5614P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
LM317T
Onsemi
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3; Adjustability: ADJUSTABLE; Package Equivalence Code: SIP3,.1TB;
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
BSS123,215
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
2N2222A
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
Changzhou Starsea Electronics
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
BSS138PW,115
NXP Semiconductors' BSS138PW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for switching applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in enhancement mode. This small outline transistor has GULL WING terminals and meets AEC-Q101 standards for automotive use.
BSS138DW-7-F
BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.
FDS4435BZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
FQT1N60CTF_WS
FQT1N60CTF_WS by Fairchild Semiconductor is a small signal N-channel field effect transistor (FET) with a min DS breakdown voltage of 600V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 0.2A.
2N7002-T
2N7002-T by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS Breakdown Voltage of 60V and Max Drain Current of 0.3A. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max operating temperature of 150°C.
BSS84
BSS84 by Onsemi is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 0.25W and can withstand temperatures from -55 to 150°C.
LND150K1-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .013 A; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7000-TA
Vishay Semiconductors
Vishay Semiconductors' 2N7000-TA is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A ID, and 5 ohm RDS. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max temp of 150°C and features a cylindrical package shape.
ZXM61P03FTA
ZXM61P03FTA by Diodes Inc. is a P-CHANNEL FET with 30V DS breakdown voltage, 1.1A max drain current, and 0.35 ohm max on resistance. It is used for switching applications in small outline packages, featuring MOSFET technology and operating up to 150°C.
FDC658P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NDS0605
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
FDS9435A
The Onsemi FDS9435A is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5.3A Drain Current, 0.05 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.5W and operating temperature range from -55 to 175 °C, it is suitable for various electronic designs requiring high performance in a small outline package.
2N7002DW
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
FDC640P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
NX3008PBK,215
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; JEDEC-95 Code: TO-236AB;
BSS138W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Power Dissipation Ambient: .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Rectron
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
BSS123
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 4 pF; No. of Terminals: 3;
2N7000
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Minimum DS Breakdown Voltage: 60 V; No. of Elements: 1;
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ZXMN6A07FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Terminal Finish: Matte Tin (Sn); JESD-30 Code: R-PDSO-G3;
ZXMN10A07FTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): 40;
ZXMN10A07FTA by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.56A max drain current, and 0.7 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.806W. The transistor features a small outline package style and can withstand temperatures up to 150°C.
ZXMN6A09GTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Maximum Drain Current (ID): 5.4 A;
ZXMN6A08E6TA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 6;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;
ZXMN3A01FTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 806 W; Transistor Element Material: SILICON; Terminal Position: DUAL;
ZXMN3A01FTA by Diodes Inc. is a small signal N-channel FET with 30V DS breakdown voltage, 1.81A max drain current, and 0.12 ohm max on resistance. It is used for switching applications in electronic circuits.
ZXMN6A11GTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; No. of Elements: 1; JESD-609 Code: e3;
ZXMN6A07FQTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Terminal Position: DUAL; No. of Terminals: 6;
ZXMN6A11ZTA
ZXMN6A11ZTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 3.6A max drain current, and 0.14 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and small outline package style. Operating in enhancement mode at up to 150°C, it offers efficient performance in various electronic devices.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 3; Package Shape: RECTANGULAR;
ZXMN3B14FTA
ZXMN3B14FTA by Diodes Inc. is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.08 ohm RDS(on), and 2.9A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. This SMALL OUTLINE transistor features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain-Source On Resistance: .08 ohm; Terminal Position: DUAL;
ZXMN2F34FHTA
ZXMN2F34FHTA by Diodes Inc. is a N-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. With a max drain current of 4A and power dissipation of 1.4W, this MOSFET has an on-resistance of 0.06 ohm and can withstand temperatures up to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3; Maximum Drain-Source On Resistance: .06 ohm;
ZXMN10A11GTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Drain-Source On Resistance: .6 ohm; JESD-30 Code: R-PDSO-G4;
ZXMN3A06DN8TA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
ZXMN6A07FTC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Maximum Drain Current (ID): 1.1 A; No. of Terminals: 3;
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