Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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ZXMN6A08E6TA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage and 2.8A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has 0.08 ohm max drain-source resistance. The small outline package with gull wing terminals can handle up to 1.7W power dissipation at 150°C max operating temperature.
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Plastic/epoxy material provides good insulation and protection for the transistor, ensuring reliable performance and durability.
N-channel transistors generally have higher mobility and faster switching speeds compared to P-channel transistors, making them a good choice for switching applications.
The built-in diode allows for reverse polarity protection and efficient switching, making the transistor suitable for a variety of applications.
Designed specifically for switching applications, this transistor offers fast response times and low power dissipation for efficient operation.
Surface mount design allows for easy and convenient PCB mounting, saving space and simplifying assembly processes.
With a minimum breakdown voltage of 60V, this transistor can handle higher voltages, making it suitable for a wide range of applications.
Capable of handling a maximum drain current of 2.5A, this transistor is suitable for applications that require moderate power handling capabilities.
With a maximum power dissipation of 1.7W, this transistor can operate efficiently without overheating, ensuring long-term reliability.
Low drain-source on resistance of 0.08 ohm results in minimal power loss and improved efficiency during operation.
High maximum drain current rating of 2.8A allows for handling higher current loads, making this transistor suitable for a variety of applications.
With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring reliable performance in demanding environments.
Small Signal Field Effect Transistors (FET) ZXMN6A08E6TA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
ZXMN6A08E6TA Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Date Code Mark Update 13/Jan/2015 Leadframe Material Update 09/Apr/2014
PCN Assembly/Origin - Mult Dev A/T Site 31/Mar/2021
PCN Other - Copper Bond Wire and Wafer Source 07/Nov/2013
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
STMicroelectronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV303N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
2N7002
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
SS14
Rugao Dachang Electronic
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
Gec Plessey Semiconductors
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
Changzhou Galaxy Century Microelectronics
LL4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99-7-F
Diodes Incorporated
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
ABS10-32.768KHZ-T
Abracon
Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.
261
Deltrol Controls
Other Relays;
MBRS340T3G
Onsemi
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
1N4148
Continental Device India
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Good-ark Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;
Shenzhen Yixinsemi Electronics
OPA2277UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
2N7002DWQ-13-F
Diodes Inc. 2N7002DWQ-13-F is a N-channel FET with 60V DS breakdown voltage, 0.23A max drain current, and 7.5 ohm max on resistance. Ideal for switching applications in small outline packages at up to 150°C operating temp.
BSS84PWL6327
Infineon Technologies
BSS84PWL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 0.15A max drain current. Ideal for small outline applications, it features a built-in diode, 8 ohm max on resistance, and operates in enhancement mode at up to 150°C.
2N7002DW-TP
Micro Commercial Components
2N7002DW-TP by Micro Commercial Components is a N-channel FET with 60V breakdown voltage and 0.34A drain current. It features separate elements with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.2W. Ideal for small signal applications requiring low on-resistance and high-speed switching capabilities.
BSS138NE6433
BSS138NE6433 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is surface mountable and has a max drain current of 0.23A. This transistor is commonly used in applications requiring enhancement mode operation and low power dissipation.
IRLML5103TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Application: SWITCHING; JESD-30 Code: R-PDSO-G3;
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
BSS138NE6327
BSS138NE6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage and 0.23A max drain current. Ideal for small outline applications, it operates in enhancement mode with 3.5 ohm RDS(on) and 3.8pF Crss, meeting MIL-STD-883 standards at -55 to 150°C temperature range.
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
FDV303N-F169
FDV303N-F169 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A ID, and 0.45 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating from -55 to 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode.
FDN340P-F095
Fairchild Semiconductor's FDN340P-F095 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, Power Dissipation of 0.5W, and operates in ENHANCEMENT MODE. The transistor has a GULL WING terminal form, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
BSS138Q-7-F
BSS138Q-7-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.2A max drain current, ideal for switching applications. It operates in enhancement mode, has 3 terminals, and features a built-in diode. With a max power dissipation of 0.3W and operating temperature range from -55 to 150°C, it meets AEC-Q101 standards for automotive use.
2N7002W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Feedback Capacitance (Crss): 7 pF; Terminal Finish: MATTE TIN;
FDN304PZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;
BSS123
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 6 ohm;
2N7002PW,115
2N7002PW,115 by NXP Semiconductors is a single N-channel FET with max drain current of 0.31A and power dissipation of 0.83W. Ideal for applications requiring high temperature resistance up to 150°C, it features metal-oxide semiconductor technology and surface mount configuration.
2N7002DW-7-F
2N7002DW-7-F by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.115A drain current, and 7.5 ohm on-resistance. Ideal for switching applications in small outline packages, it operates in enhancement mode at up to 150°C temperature.
FDS6675BZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 30 V;
NTS4101PT1G
NTS4101PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 0.12 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max Drain Current of 1.37A and can withstand temperatures up to 150°C.
SI2300DS-T1-GE3
Vishay Intertechnology
SI2300DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 3.6A max drain current. Ideal for switching applications, it operates in enhancement mode with a built-in diode, offering 0.068 ohm max on-resistance and 19pF feedback capacitance.
BSS84PH6433
BSS84PH6433 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A ID, and 8 ohm RDS(on). Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance.
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ZXMN6A07FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Terminal Finish: Matte Tin (Sn); JESD-30 Code: R-PDSO-G3;
ZXMN6A07FTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.93A Drain Current, and 0.3 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
ZXMN10A07FTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): 40;
ZXMN10A07FTA by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.56A max drain current, and 0.7 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.806W. The transistor features a small outline package style and can withstand temperatures up to 150°C.
ZXMN6A09GTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Maximum Drain Current (ID): 5.4 A;
ZXMN6A08E6TA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;
ZXMN3A01FTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 806 W; Transistor Element Material: SILICON; Terminal Position: DUAL;
ZXMN3A01FTA by Diodes Inc. is a small signal N-channel FET with 30V DS breakdown voltage, 1.81A max drain current, and 0.12 ohm max on resistance. It is used for switching applications in electronic circuits.
ZXMN6A11GTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; No. of Elements: 1; JESD-609 Code: e3;
ZXMN6A07FQTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Terminal Position: DUAL; No. of Terminals: 6;
ZXMN6A11ZTA
ZXMN6A11ZTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 3.6A max drain current, and 0.14 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and small outline package style. Operating in enhancement mode at up to 150°C, it offers efficient performance in various electronic devices.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 3; Package Shape: RECTANGULAR;
ZXMN3B14FTA
ZXMN3B14FTA by Diodes Inc. is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.08 ohm RDS(on), and 2.9A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. This SMALL OUTLINE transistor features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain-Source On Resistance: .08 ohm; Terminal Position: DUAL;
ZXMN2F34FHTA
ZXMN2F34FHTA by Diodes Inc. is a N-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. With a max drain current of 4A and power dissipation of 1.4W, this MOSFET has an on-resistance of 0.06 ohm and can withstand temperatures up to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3; Maximum Drain-Source On Resistance: .06 ohm;
ZXMN10A11GTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Drain-Source On Resistance: .6 ohm; JESD-30 Code: R-PDSO-G4;
ZXMN3A06DN8TA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
ZXMN6A08E6TC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
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