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MMBF4393LT1G

Onsemi

MMBF4393LT1G by Onsemi

MMBF4393LT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 0.225W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

Median Price

$0.103

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 8,956 parts In-Stock

1+ parts

$0.330

100+ parts

$0.142

1k+ parts

$0.114

10k+ parts

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8,956

$0.330

$0.142

$0.114

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Mouser Electronics

USA . 81,001 parts In-Stock

1+ parts

$0.470

100+ parts

$0.185

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$0.123

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$0.096

81,001

$0.470

$0.185

$0.123

$0.096

DigiKey

USA . 41,636 parts In-Stock

1+ parts

$0.470

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$0.184

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$0.123

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41,636

$0.470

$0.184

$0.123

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Adafruit Industries

USA . 22 parts In-Stock

1+ parts

$2.336

100+ parts

$2.126

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$1.916

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22

$2.336

$2.126

$1.916

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Flip Electronics (Authorized)

USA . 327,000 parts In-Stock

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Future Electronics

Canada . 174,000 parts In-Stock

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Arrow

USA . 102,000 parts In-Stock

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Verical

USA . 96,000 parts In-Stock

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$0.074

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Master Electronics

USA . 42,000 parts In-Stock

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$0.085

42,000

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$0.085

Chip1Stop

Japan . 257 parts In-Stock

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$0.103

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$0.094

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257

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$0.103

$0.094

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.129

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500

$0.129

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Digiode

USA . 1,765 parts In-Stock

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$0.308

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1,765

$0.308

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TME

Poland . 3,961 parts In-Stock

1+ parts

$0.340

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$0.165

1k+ parts

$0.108

10k+ parts

$0.095

3,961

$0.340

$0.165

$0.108

$0.095

Maritex

Poland . 29,226 parts In-Stock

1+ parts

$0.488

100+ parts

$0.117

1k+ parts

$0.081

10k+ parts

$0.065

29,226

$0.488

$0.117

$0.081

$0.065

NAC Semi

USA . 894,000 parts In-Stock

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IBS Electronics

USA . 609,000 parts In-Stock

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$0.201

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$0.131

609,000

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$0.131

Flip Electronics

USA . 282,000 parts In-Stock

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Chip Stock

USA . 134,250 parts In-Stock

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Vyrian

USA . 57,715 parts In-Stock

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Cyclops Electronics Ltd

UK . 19,482 parts In-Stock

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Component Sense

UK . 17,079 parts In-Stock

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Bristol Electronics

USA . 13,234 parts In-Stock

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ComSIT Distribution GmbH

Germany . 7,761 parts In-Stock

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ComSIT USA

USA . 7,761 parts In-Stock

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Goldney Electronics S.L.

Spain . 2,160 parts In-Stock

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Schukat

Germany . 1,700 parts In-Stock

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$0.105

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$0.105

Diverse Electronics

Canada . 1,317 parts In-Stock

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Microfarads

USA . 189 parts In-Stock

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Prism Electronics

USA . 12 parts In-Stock

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12

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Sensible Micro Corp

USA . 5 parts In-Stock

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5

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EPE Components Inc.

USA . 2 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 129,515 parts In-Stock

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$0.055

100+ parts

$0.054

1k+ parts

$0.053

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129,515

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$0.054

$0.053

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Ampacity Inc.

Singapore . 117,848 parts In-Stock

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Corohmni

South Africa . 124 parts In-Stock

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$0.062

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124

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Component Stockers USA

USA . 29,211 parts In-Stock

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$0.090

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$0.090

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$0.060

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$0.060

29,211

$0.090

$0.090

$0.060

$0.060

Aranea Global

USA . 2,000 parts In-Stock

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$0.126

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$0.121

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2,000

$0.126

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$0.121

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Argo Parts USA

USA . 2,158 parts In-Stock

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$0.127

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$0.123

2,158

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$0.123

Continental Prestige Electronics

USA . 1,030 parts In-Stock

1+ parts

$0.175

100+ parts

$0.127

1k+ parts

$0.106

10k+ parts

$0.083

1,030

$0.175

$0.127

$0.106

$0.083

Corphita

USA . 490 parts In-Stock

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$0.292

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490

$0.292

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Aztec Data Supply Inc.

USA . 110 parts In-Stock

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$0.983

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110

$0.983

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Advanced Electronics

New Zealand . 22 parts In-Stock

1+ parts

$2.336

100+ parts

$2.126

1k+ parts

$1.916

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22

$2.336

$2.126

$1.916

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Perfect Parts

USA . 133,726 parts In-Stock

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133,726

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RC Electronics

USA . 90,385 parts In-Stock

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$0.130

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$0.120

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$0.120

90,385

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$0.120

$0.120

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Futuretech Components

Singapore . 50,000 parts In-Stock

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GreenTree Electronics

Israel . 42,000 parts In-Stock

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Authorized Procurement Solutions

USA . 39,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,741 parts In-Stock

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iodParts Technologies Inc.

India . 18,360 parts In-Stock

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Lixinc

USA . 14,706 parts In-Stock

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TANS Electronics

Latvia . 7,488 parts In-Stock

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Kulean Microsystems

USA . 7,127 parts In-Stock

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SupplyDigital Components

Austria . 5,595 parts In-Stock

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Problanco Electronics

Mexico . 3,714 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Allen Electronics Distributors

USA . 2,350 parts In-Stock

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$0.071

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$0.055

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2,350

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$0.071

$0.055

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A-Z Elektronik GmbH

Germany . 1,980 parts In-Stock

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1,980

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UHIMA Technologies

Türkiye . 586 parts In-Stock

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586

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Overview

Enhance your electronic projects with the MMBF4393LT1G by Onsemi, a high-quality Small Signal Field Effect Transistor that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL transistor is perfect for switching applications. Its single configuration with built-in diode makes it versatile and efficient. With its small outline package and low power dissipation, this FET is ideal for compact designs where space is limited. Trust Onsemi to deliver top-notch technology that meets your needs. Elevate your projects with the MMBF4393LT1G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have faster switching speeds and higher mobility, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps with reverse current protection and can simplify circuit design by eliminating the need for an external diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliable operation in such scenarios.

Surface Mount: YES

Surface mount capability makes it easy to integrate the transistor onto PCBs, saving space and allowing for automated assembly processes.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages without issues, expanding its range of potential applications.

Maximum Power Dissipation (Abs): 0.225 W

Despite its small size, this transistor can dissipate up to 0.225W of power, making it suitable for applications where power dissipation is a concern.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance and low output impedance, providing efficient signal amplification and switching capabilities.

Maximum Operating Temperature: 150 °C

The transistor can operate at temperatures up to 150°C, allowing for use in high-temperature environments without risk of damage.

Maximum Drain-Source On Resistance: 100 ohm

With a low on-resistance, this transistor minimizes power loss and heat generation, improving efficiency in switching applications.

Maximum Feedback Capacitance (Crss): 3.5 pF

The low feedback capacitance helps reduce signal distortion and improve high-frequency performance in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) MMBF4393LT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMBF4393LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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