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ZXMN2F34FHTA

Diodes Incorporated

ZXMN2F34FHTA by Diodes Incorporated

ZXMN2F34FHTA by Diodes Inc. is a N-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. With a max drain current of 4A and power dissipation of 1.4W, this MOSFET has an on-resistance of 0.06 ohm and can withstand temperatures up to 150°C.

Median Price

$0.130

Lifecycle Status

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20

In-Stock Inventory

1k+

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Mouser Electronics

USA . 45,805 parts In-Stock

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$0.720

100+ parts

$0.285

1k+ parts

$0.194

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45,805

$0.720

$0.285

$0.194

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DigiKey

USA . 29,999 parts In-Stock

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$0.720

100+ parts

$0.285

1k+ parts

$0.194

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29,999

$0.720

$0.285

$0.194

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Arrow

USA . 21,000 parts In-Stock

1+ parts

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$0.113

21,000

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$0.113

Verical

USA . 21,000 parts In-Stock

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$0.113

21,000

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$0.113

Newark

USA . 9,000 parts In-Stock

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$0.123

9,000

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$0.123

Avnet

USA . 3,000 parts In-Stock

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3,000

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Element14

Singapore . 2,388 parts In-Stock

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-

100+ parts

$0.179

1k+ parts

$0.155

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$0.153

2,388

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$0.179

$0.155

$0.153

Farnell

UK . 1,173 parts In-Stock

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-

100+ parts

$0.130

1k+ parts

$0.120

10k+ parts

$0.111

1,173

-

$0.130

$0.120

$0.111

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Nova Conductors

Japan . 10 parts In-Stock

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$0.155

100+ parts

-

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10

$0.155

-

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TME

Poland . 738 parts In-Stock

1+ parts

$0.440

100+ parts

$0.219

1k+ parts

$0.164

10k+ parts

$0.144

738

$0.440

$0.219

$0.164

$0.144

Bristol Electronics

USA . 2,790 parts In-Stock

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$0.594

100+ parts

$0.297

1k+ parts

$0.119

10k+ parts

-

2,790

$0.594

$0.297

$0.119

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IBS Electronics

USA . 27,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

$0.076

27,000

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$0.076

Chip Stock

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24,030

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Vyrian

USA . 22,956 parts In-Stock

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22,956

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NAC Semi

USA . 6,000 parts In-Stock

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$0.110

6,000

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$0.110

ACDS - Activité Composants Distribution Service

France . 2,790 parts In-Stock

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2,790

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Dan-Mar Components

USA . 2,790 parts In-Stock

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2,790

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 368 parts In-Stock

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368

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Huijzer Components

Netherlands . 100 parts In-Stock

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100

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ComSIT Distribution GmbH

Germany . 75 parts In-Stock

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75

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Semicontronic

India . 22,946 parts In-Stock

1+ parts

$0.085

100+ parts

$0.083

1k+ parts

$0.082

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22,946

$0.085

$0.083

$0.082

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Argo Parts USA

USA . 1,002 parts In-Stock

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$0.155

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$0.150

1,002

$0.155

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$0.150

Component Stockers USA

USA . 194,313 parts In-Stock

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$0.440

100+ parts

$0.110

1k+ parts

$0.090

10k+ parts

$0.090

194,313

$0.440

$0.110

$0.090

$0.090

Continental Prestige Electronics

USA . 998 parts In-Stock

1+ parts

$0.457

100+ parts

$0.219

1k+ parts

$0.125

10k+ parts

$0.101

998

$0.457

$0.219

$0.125

$0.101

Aztec Data Supply Inc.

USA . 2,734 parts In-Stock

1+ parts

$1.221

100+ parts

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2,734

$1.221

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Corohmni

South Africa . 98 parts In-Stock

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$1.286

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98

$1.286

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Perfect Parts

USA . 137,460 parts In-Stock

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137,460

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 33,832 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,588 parts In-Stock

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Glotronic Ltd.

UK . 7,200 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Discover the power and efficiency of the ZXMN2F34FHTA by Diodes Incorporated, a leading manufacturer in the field of Small Signal Field Effect Transistors. This N-CHANNEL transistor with a single configuration and built-in diode is perfect for switching applications, offering a minimum DS breakdown voltage of 20V and a maximum drain current of 4A. With its compact package shape and surface mount capability, this transistor provides enhanced performance and reliability. Trust Diodes Incorporated for high-quality components that deliver outstanding results in your electronic projects. Choose the ZXMN2F34FHTA for superior functionality and seamless operation.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type:

N-CHANNEL - Offers efficient performance and compatibility with N-channel devices.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space by integrating a diode within the transistor.

Transistor Application:

SWITCHING - Ideal for applications requiring fast switching speeds and high efficiency.

Surface Mount:

YES - Facilitates easy installation on PCBs and allows for compact design layouts.

Minimum DS Breakdown Voltage:

20 V - Ensures reliability and prevents damage due to voltage spikes.

Package Shape:

RECTANGULAR - Enables easy placement on the PCB for efficient circuit design.

Terminal Form:

GULL WING - Provides secure solder connections for stable electrical connections.

Operating Mode:

ENHANCEMENT MODE - Allows for precise control over the transistor's operation for optimized performance.

Maximum Drain Current (Abs) (ID):

4 A - Capable of handling high current loads, making it suitable for power applications.

No. of Terminals:

3 - Simplifies circuit connections and reduces complexity.

Maximum Power Dissipation (Abs):

1.4 W - Ensures the transistor can handle power dissipation requirements without overheating.

Package Style (Meter):

SMALL OUTLINE - Offers a compact form factor for space-constrained applications.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Provides high-speed operation and low power consumption.

Maximum Operating Temperature:

150 °C - Can operate in a wide range of temperatures, ensuring reliability in various environments.

Transistor Element Material:

SILICON - Ensures high performance and reliability in electronic circuits.

Terminal Finish:

MATTE TIN - Provides a reliable and secure contact surface for soldering.

Maximum Drain Current (ID):

3.4 A - Capable of handling high current loads for power applications.

Maximum Drain-Source On Resistance:

0.06 ohm - Offers low resistance for efficient power transfer.

Terminal Position:

DUAL - Allows for flexible PCB mounting options and easy integration into circuits.

Maximum Time At Peak Reflow Temperature (s):

30 - Can withstand peak reflow temperatures for efficient soldering processes.

Peak Reflow Temperature °C:

260 - Ensures reliable solder connections during manufacturing processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMN2F34FHTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

3.4 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMN2F34FHTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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