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ZXMN6A07FTC

Zetex Plc

ZXMN6A07FTC by Zetex Plc

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Maximum Drain Current (ID): 1.1 A; No. of Terminals: 3;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMN6A07FTC attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Zetex Plc

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.93 A

Maximum Drain Current (ID):

1.1 A

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMN6A07FTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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