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ZXMS6005SGQTA

Diodes Incorporated

ZXMS6005SGQTA by Diodes Incorporated

ZXMS6005SGQTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.25 ohm RDS(on), and built-in diode for SWITCHING applications. It features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE. Ideal for automotive electronics due to AEC-Q101 compliance.

Median Price

$0.409

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 12,000 parts In-Stock

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$0.409

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12,000

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$0.409

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Distributors (In-Stock)

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Nova Conductors

Japan . 54 parts In-Stock

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$0.460

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54

$0.460

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Chip Stock

USA . 69,000 parts In-Stock

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69,000

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Vyrian

USA . 17,207 parts In-Stock

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17,207

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Distributors (Availability)

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Ampacity Inc.

Singapore . 12,954 parts In-Stock

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$0.311

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12,954

$0.311

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Argo Parts USA

USA . 4,439 parts In-Stock

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$0.460

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$0.447

4,439

$0.460

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$0.447

Continental Prestige Electronics

USA . 3,833 parts In-Stock

1+ parts

$0.460

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$0.451

3,833

$0.460

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$0.451

Netroflash

USA . 1,000 parts In-Stock

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$0.460

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1,000

$0.460

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Microchip USA

USA . 2,795 parts In-Stock

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$2.852

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2,795

$2.852

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AZTECH Wire

Italy . 877 parts In-Stock

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$22.010

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877

$22.010

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Overview

Unleash the power of innovation with the ZXMS6005SGQTA by Diodes Incorporated, a leading manufacturer in the field of Small Signal Field Effect Transistors (FET). This high-quality transistor offers unparalleled reliability and efficiency in switching applications, making it an essential component for your electronic projects. With a minimum DS breakdown voltage of 60V and a maximum drain-source on resistance of 0.25 ohm, this N-CHANNEL transistor provides exceptional performance in a compact rectangular package. Trust Diodes Incorporated to deliver cutting-edge technology that meets the highest industry standards, ensuring superior results every time. Elevate your designs with the ZXMS6005SGQTA and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower on-resistance and higher electron mobility, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for protection against reverse voltage and helps in preventing damage to the transistor during switching operations.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficient operation.

Surface Mount: YES

Being surface mountable allows for easy and convenient PCB assembly, saving space and reducing overall system size.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and low power consumption, making it ideal for various applications.

Maximum Drain-Source On Resistance: 0.25 ohm

Low on-resistance ensures minimal power loss and high efficiency during switching operations.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures high quality and reliability, making it suitable for automotive applications where durability is essential.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMS6005SGQTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6005SGQTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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