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ZXMS6005DT8TA

Diodes Incorporated

ZXMS6005DT8TA by Diodes Incorporated

ZXMS6005DT8TA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.25 ohm Drain-Source On Resistance, and 2.13W Power Dissipation. With ENHANCEMENT MODE operation, it's ideal for surface mount designs in various electronic systems.

Median Price

$2.690

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 389 parts In-Stock

1+ parts

$2.391

100+ parts

$1.290

1k+ parts

$1.098

10k+ parts

-

389

$2.391

$1.290

$1.098

-

Newark

USA . 1,445 parts In-Stock

1+ parts

$2.990

100+ parts

$1.340

1k+ parts

$1.100

10k+ parts

-

1,445

$2.990

$1.340

$1.100

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Mouser Electronics

USA . 4,286 parts In-Stock

1+ parts

$3.100

100+ parts

$1.390

1k+ parts

$1.070

10k+ parts

$1.010

4,286

$3.100

$1.390

$1.070

$1.010

DigiKey

USA . 728 parts In-Stock

1+ parts

$3.100

100+ parts

$1.386

1k+ parts

$1.120

10k+ parts

-

728

$3.100

$1.386

$1.120

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Verical

USA . 11,000 parts In-Stock

1+ parts

-

100+ parts

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$0.980

10k+ parts

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11,000

-

-

$0.980

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Element14

Singapore . 1,502 parts In-Stock

1+ parts

-

100+ parts

$1.890

1k+ parts

$1.710

10k+ parts

-

1,502

-

$1.890

$1.710

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.063

100+ parts

-

1k+ parts

-

10k+ parts

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50

$1.063

-

-

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Chip Stock

USA . 71,000 parts In-Stock

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71,000

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Vyrian

USA . 3,422 parts In-Stock

1+ parts

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3,422

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.430

10k+ parts

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1,000

-

-

$1.430

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ComSIT Distribution GmbH

Germany . 102 parts In-Stock

1+ parts

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100+ parts

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102

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ComSIT USA

USA . 102 parts In-Stock

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102

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,697 parts In-Stock

1+ parts

$0.740

100+ parts

-

1k+ parts

-

10k+ parts

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3,697

$0.740

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Semicontronic

India . 3,306 parts In-Stock

1+ parts

$0.740

100+ parts

$0.722

1k+ parts

$0.718

10k+ parts

-

3,306

$0.740

$0.722

$0.718

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Aztec Data Supply Inc.

USA . 197 parts In-Stock

1+ parts

$0.860

100+ parts

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197

$0.860

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$1.042

100+ parts

-

1k+ parts

$1.000

10k+ parts

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50

$1.042

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$1.000

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Argo Parts USA

USA . 1,702 parts In-Stock

1+ parts

$1.063

100+ parts

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1,702

$1.063

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Corohmni

South Africa . 154 parts In-Stock

1+ parts

$1.113

100+ parts

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154

$1.113

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Continental Prestige Electronics

USA . 911 parts In-Stock

1+ parts

$1.620

100+ parts

$1.090

1k+ parts

$0.935

10k+ parts

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911

$1.620

$1.090

$0.935

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Lixinc

USA . 5,290 parts In-Stock

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5,290

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Advanced Electronics

New Zealand . 700 parts In-Stock

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700

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Overview

Unlock a world of possibilities with the Diodes Incorporated ZXMS6005DT8TA Small Signal Field Effect Transistor. Manufactured by industry leader Diodes Incorporated, this N-CHANNEL transistor offers superior quality and reliability for switching applications. With a high DS breakdown voltage of 60V and low on-resistance of 0.25 ohm, this enhancement mode transistor delivers exceptional performance while operating at a maximum temperature of 150°C. Its compact design and surface mount capability make it ideal for a wide range of electronic devices. Trust in Diodes Incorporated to provide cutting-edge technology that meets your needs. Elevate your projects with the ZXMS6005DT8TA today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON-resistance and higher mobility, making them suitable for high-performance applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for independent control and operation, enhancing flexibility in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount technology saves space and allows for automated assembly, making it ideal for compact electronic designs.

Minimum DS Breakdown Voltage: 60 V

A high breakdown voltage tolerance adds reliability and robustness to the transistor, suitable for a variety of applications.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and integration into circuit boards, making installation hassle-free.

Terminal Form: GULL WING

Gull wing terminals are ideal for surface mounting and provide secure connections, ensuring stability in operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and low leakage current, making them energy-efficient and responsive.

No. of Elements: 2

With two elements, this FET can be used in more complex circuit configurations, expanding its versatility.

No. of Terminals: 8

Having 8 terminals allows for more connections and control points, enabling sophisticated circuit designs.

Maximum Power Dissipation (Abs): 2.13 W

The high power dissipation capability ensures stable operation under varying load conditions, reducing the risk of overheating.

Package Style (Meter): SMALL OUTLINE

Small outline packages save space on the PCB, making this FET suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and efficiency, essential for demanding applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can withstand harsh environmental conditions without performance degradation.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, ensuring consistent operation over time.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring secure connections and long-term reliability.

Maximum Drain Current (ID): 0.0014 A

Capable of handling a maximum drain current of 0.0014 A, making it suitable for low to medium power applications.

Maximum Drain-Source On Resistance: 0.25 ohm

Low ON-resistance minimizes power losses and improves efficiency, making this FET an ideal choice for high-performance circuits.

Terminal Position: DUAL

Dual terminal position ensures easy installation and compatibility with standard PCB layouts, simplifying assembly.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this FET can be easily integrated into automated manufacturing processes for efficient production.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C allows for reliable soldering and connection, ensuring long-term performance stability.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMS6005DT8TA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.0014 A

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6005DT8TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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