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ZXMS6006DT8QTA

Diodes Incorporated

ZXMS6006DT8QTA by Diodes Incorporated

ZXMS6006DT8QTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.125 ohm RDS(on), and 150°C max operating temp. Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology.

Median Price

$1.081

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 69 parts In-Stock

1+ parts

$1.081

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69

$1.081

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Vyrian

USA . 15,946 parts In-Stock

1+ parts

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15,946

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$1.059

100+ parts

-

1k+ parts

$1.017

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2,000

$1.059

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$1.017

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Microchip USA

USA . 1,783 parts In-Stock

1+ parts

$7.382

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1,783

$7.382

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AZTECH Wire

Italy . 479 parts In-Stock

1+ parts

$15.022

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479

$15.022

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Ampacity Inc.

Singapore . 1,639 parts In-Stock

1+ parts

$37.050

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1,639

$37.050

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Overview

Discover the cutting-edge technology of the ZXMS6006DT8QTA by Diodes Incorporated, a leader in semiconductor manufacturing. This small signal field effect transistor offers high-quality performance and reliability for switching applications. With its N-channel configuration and built-in diode, this transistor is designed for enhanced efficiency and precision. Ideal for a wide range of electronic devices, this product provides customers with value, benefits, and advantages that set it apart from the competition. Elevate your projects with the ZXMS6006DT8QTA and experience the difference that Diodes Incorporated brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the transistor suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer high efficiency and fast switching speeds, making them ideal for switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for versatility in circuit design and the built-in diode enhances performance and protection.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is efficient and reliable in controlling power flow.

Surface Mount: YES

Being surface mountable means easy installation and integration into compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without failure, ensuring reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for compact integration in circuit layouts, saving space in electronic devices.

Terminal Form: GULL WING

The gull wing terminal form offers secure connections and easy soldering, ensuring reliable performance in various environments.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides precise control and high performance in switching applications.

No. of Elements: 2

Having two elements increases versatility and allows for more complex circuit configurations.

No. of Terminals: 8

The higher number of terminals allows for more connection options and flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for high-density mounting on circuit boards.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOS technology ensures high efficiency, low power consumption, and fast switching speeds.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand challenging environmental conditions.

Transistor Element Material: SILICON

Silicon material provides reliability, durability, and high performance in various applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for use in extreme cold environments without compromising performance.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and provides corrosion resistance for long-term reliability.

Maximum Drain-Source On Resistance: 0.125 ohm

The low on-resistance minimizes power loss and maximizes efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position allows for easy connection and integration into various circuit configurations.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand high-temperature soldering processes without damage.

Reference Standard: AEC-Q101

Complies with AEC-Q101 standards for automotive-grade reliability and performance assurance.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZXMS6006DT8QTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.125 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZXMS6006DT8QTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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