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BVSS138LT1G

Onsemi

BVSS138LT1G by Onsemi

BVSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates b/w -55 to 150 °C and complies with AEC-Q101 standard.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

36

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 84,000 parts In-Stock

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$0.054

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$0.054

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Rochester

USA . 4,977 parts In-Stock

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$0.070

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$0.070

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$0.070

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4,977

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$0.070

$0.070

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Arrow

USA . 15 parts In-Stock

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$0.301

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15

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Mouser Electronics

USA . 630,581 parts In-Stock

1+ parts

$0.320

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$0.124

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$0.081

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$0.056

630,581

$0.320

$0.124

$0.081

$0.056

Flip Electronics (Authorized)

USA . 4,965,000 parts In-Stock

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Future Electronics

Canada . 1,605,000 parts In-Stock

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Verical

USA . 138,000 parts In-Stock

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Master Electronics

USA . 138,000 parts In-Stock

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Element14

Singapore . 54,390 parts In-Stock

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$0.110

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DigiKey

USA . 45,140 parts In-Stock

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Farnell

UK . 43,263 parts In-Stock

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$0.039

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RS (Exports)

UK . 30,000 parts In-Stock

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$0.104

1k+ parts

$0.074

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$0.048

30,000

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$0.104

$0.074

$0.048

Chip1Stop

Japan . 3,086 parts In-Stock

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$0.084

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$0.044

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3,086

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Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.085

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10

$0.085

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Bristol Electronics

USA . 8,349 parts In-Stock

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$0.225

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$0.113

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$0.045

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$0.028

8,349

$0.225

$0.113

$0.045

$0.028

TME

Poland . 2,770 parts In-Stock

1+ parts

$0.300

100+ parts

$0.118

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$0.067

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$0.061

2,770

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$0.118

$0.067

$0.061

Digiode

USA . 211 parts In-Stock

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$0.342

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$0.342

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Maritex

Poland . 361 parts In-Stock

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$0.394

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$0.099

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$0.066

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$0.056

361

$0.394

$0.099

$0.066

$0.056

NAC Semi

USA . 2,226,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,155,395 parts In-Stock

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IBS Electronics

USA . 1,398,000 parts In-Stock

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Vyrian

USA . 717,468 parts In-Stock

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Chip Stock

USA . 258,500 parts In-Stock

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ComSIT USA

USA . 87,000 parts In-Stock

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Elcom Components

USA . 18,087 parts In-Stock

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NexGen Digital

USA . 11,760 parts In-Stock

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VNN

France . 3,156 parts In-Stock

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Diverse Electronics

Canada . 3,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,588 parts In-Stock

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Prism Electronics

USA . 1,563 parts In-Stock

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Flip Electronics

USA . 1,000 parts In-Stock

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Microfarads

USA . 567 parts In-Stock

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Sensible Micro Corp

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Speed Components Ltd

Israel . 234 parts In-Stock

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Resion

USA . 141 parts In-Stock

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Semtec, LLC

USA . 22 parts In-Stock

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Semicontronic

India . 715,772 parts In-Stock

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$0.037

100+ parts

$0.036

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$0.036

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715,772

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Ampacity Inc.

Singapore . 642,602 parts In-Stock

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Corohmni

South Africa . 238 parts In-Stock

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$0.041

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238

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Argo Parts USA

USA . 3,995 parts In-Stock

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$0.085

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$0.082

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$0.085

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Netroflash

USA . 2,000 parts In-Stock

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$0.085

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Corphita

USA . 82 parts In-Stock

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$0.324

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Modulus Dynamics

Lithuania . 12,166 parts In-Stock

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$0.926

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$0.926

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$0.926

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Aztec Data Supply Inc.

USA . 3,415 parts In-Stock

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$1.040

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3,415

$1.040

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$1.417

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$1.346

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$1.346

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40

$1.417

$1.346

$1.346

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Eastek

USA . 2,649,000 parts In-Stock

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GreenTree Electronics

Israel . 1,836,000 parts In-Stock

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Perfect Parts

USA . 594,396 parts In-Stock

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RC Electronics

USA . 130,738 parts In-Stock

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$0.090

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$0.080

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$0.080

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$0.080

Continental Prestige Electronics

USA . 21,655 parts In-Stock

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$0.090

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$0.069

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$0.056

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$0.069

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Problanco Electronics

Mexico . 5,034 parts In-Stock

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Kulean Microsystems

USA . 4,017 parts In-Stock

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Formix International (Excess)

India . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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TANS Electronics

Latvia . 1,858 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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Lixinc

USA . 1,729 parts In-Stock

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SupplyDigital Components

Austria . 1,655 parts In-Stock

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UHIMA Technologies

Türkiye . 704 parts In-Stock

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Robosynatics

Brazil . 300 parts In-Stock

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$0.658

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$0.658

Lucentia Tech

USA . 300 parts In-Stock

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$0.658

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$0.658

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$0.658

300

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$0.658

$0.658

$0.658

Overview

Unleash the power of innovation with the BVSS138LT1G by Onsemi. Crafted with precision and expertise, this Small Signal Field Effect Transistor (FET) offers unmatched quality and reliability. Ideal for switching applications, this N-CHANNEL transistor with a built-in diode is designed to enhance performance and efficiency. With its compact design and high durability, this transistor provides exceptional value and benefits to customers across various industries. Experience seamless operation and optimal functionality with the BVSS138LT1G, setting new standards in transistor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient control and switching capabilities in electronic circuits.

Transistor Application: SWITCHING

Optimized for fast switching operations, making it suitable for a wide range of applications.

Minimum DS Breakdown Voltage: 50 V

High breakdown voltage ensures reliable performance in various voltage requirements.

Maximum Drain Current (Abs) (ID): 0.2 A

Capable of handling moderate current levels for efficient operation.

Maximum Power Dissipation (Abs): 0.225 W

Efficient power handling capability, preventing overheating during operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for a wide range of operating environments.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature environments without performance degradation.

Maximum Drain-Source On Resistance: 3.5 ohm

Low on-resistance leads to reduced power losses and improved efficiency.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance allows for faster switching speeds and improved performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) BVSS138LT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

.2 A

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BVSS138LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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