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BVSS138LT3G

Onsemi

BVSS138LT3G by Onsemi

BVSS138LT3G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 3.5 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and built-in diode feature.

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4

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1k+

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Vyrian

USA . 4,885 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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VNN

France . 858 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 300 parts In-Stock

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$13.468

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Ampacity Inc.

Singapore . 132 parts In-Stock

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TANS Electronics

Latvia . 6,991 parts In-Stock

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SupplyDigital Components

Austria . 5,571 parts In-Stock

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Kulean Microsystems

USA . 2,457 parts In-Stock

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Aranea Global

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Problanco Electronics

Mexico . 1,820 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 575 parts In-Stock

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Corohmni

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Overview

Discover the BVSS138LT3G by Onsemi, a high-quality Small Signal Field Effect Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL transistor is designed for switching applications with a built-in diode for added convenience. With a 50V minimum DS breakdown voltage and low on-resistance, this transistor provides efficient operation and enhanced functionality. Ideal for a wide range of electronic devices, the BVSS138LT3G is perfect for customers looking for reliable performance and lasting value in their applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance and lower resistance compared to P-channel transistors, making this a good choice for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy handling of reverse current, providing added protection and versatility in circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and efficient operation in various electronic circuits.

Surface Mount: YES

Surface mount technology allows for easier and more compact circuit board design, making this transistor suitable for modern electronic devices.

Minimum DS Breakdown Voltage: 50 V

With a high breakdown voltage, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on circuit boards, maximizing space utilization.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical support and easy soldering, ensuring reliable connections in the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to control and offer better performance in switching applications, making this transistor a reliable choice.

No. of Terminals: 3

The 3-terminal design allows for simple and efficient circuit connections, reducing complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and allows for compact and lightweight electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching efficiency and low power consumption, making this transistor energy-efficient.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and stability, ensuring consistent performance over a wide range of operating conditions.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability in circuit connections.

Maximum Drain Current (ID): 0.2 A

With a maximum drain current of 0.2A, this transistor can handle moderate current levels, suitable for many electronic applications.

Maximum Drain-Source On Resistance: 3.5 ohm

The low drain-source on resistance of 3.5 ohm results in minimal power loss and efficient switching performance in the circuit.

Terminal Position: DUAL

The dual terminal position allows for flexible circuit connections and layout options, making it suitable for various circuit designs.

Maximum Feedback Capacitance (Crss): 5 pF

The low feedback capacitance helps minimize signal distortion and interference, ensuring reliable signal processing in the circuit.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making this transistor suitable for automotive and industrial applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BVSS138LT3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BVSS138LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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