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SZNUP2105LT1G

Onsemi

SZNUP2105LT1G by Onsemi

SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

42

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 30,026 parts In-Stock

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$0.080

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$0.080

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Arrow

USA . 360 parts In-Stock

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$0.211

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$0.116

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$0.051

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$0.211

$0.116

$0.051

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Distrelec

Netherlands . 923 parts In-Stock

1+ parts

$0.353

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$0.243

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$0.132

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923

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Mouser Electronics

USA . 510,725 parts In-Stock

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$0.410

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$0.158

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$0.096

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$0.081

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$0.158

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$0.081

Avnet

USA . 2,499,000 parts In-Stock

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Verical

USA . 147,000 parts In-Stock

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Master Electronics

USA . 147,000 parts In-Stock

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Germany . 21,000 parts In-Stock

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Rochester

USA . 6,950 parts In-Stock

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$0.119

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$0.099

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$0.088

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$0.088

Chip1Stop

Japan . 658 parts In-Stock

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$0.112

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Digiode

USA . 180 parts In-Stock

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Greenchips

USA . 1,581 parts In-Stock

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$0.064

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$0.061

1k+ parts

$0.058

10k+ parts

$0.052

1,581

$0.064

$0.061

$0.058

$0.052

Ozdisan Elektronik

Türkiye . 21,222 parts In-Stock

1+ parts

$0.090

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IBS Electronics

USA . 171,200 parts In-Stock

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$0.168

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$0.087

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$0.070

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$0.041

171,200

$0.168

$0.087

$0.070

$0.041

TME

Poland . 10,203 parts In-Stock

1+ parts

$0.320

100+ parts

$0.127

1k+ parts

$0.077

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$0.055

10,203

$0.320

$0.127

$0.077

$0.055

Maritex

Poland . 388,141 parts In-Stock

1+ parts

$0.438

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$0.066

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388,141

$0.438

$0.100

$0.066

$0.051

Bristol Electronics

USA . 2,351 parts In-Stock

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$0.525

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$0.105

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Nova Conductors

Japan . 50 parts In-Stock

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NAC Semi

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Flip Electronics

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Electro Sonic

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ComSIT Distribution GmbH

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PC Components Company LLC

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Demsay Elektronik

Türkiye . 234 parts In-Stock

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Elcom Components

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Aztec Data Supply Inc.

USA . 288 parts In-Stock

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Ampacity Inc.

Singapore . 134,233 parts In-Stock

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Decca Corp

Germany . 129,727 parts In-Stock

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Semicontronic

India . 129,608 parts In-Stock

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Corphita

USA . 1,884 parts In-Stock

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Corohmni

South Africa . 178 parts In-Stock

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Modulus Dynamics

Lithuania . 14,501 parts In-Stock

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Argo Parts USA

USA . 2,816 parts In-Stock

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Advanced Electronics

New Zealand . 80 parts In-Stock

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Component Stockers USA

USA . 2,105,709 parts In-Stock

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Continental Prestige Electronics

USA . 6,488 parts In-Stock

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$0.446

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$0.216

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$0.122

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$0.095

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Netroflash

USA . 100 parts In-Stock

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$1.000

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$0.950

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$0.930

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Perfect Parts

USA . 15,750,312 parts In-Stock

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Eastek

USA . 1,374,000 parts In-Stock

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iodParts Technologies Inc.

India . 498,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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USA . 87,150 parts In-Stock

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India . 53,065 parts In-Stock

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Latvia . 6,180 parts In-Stock

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Singapore . 2,980 parts In-Stock

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Problanco Electronics

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Brazil . 1,744 parts In-Stock

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Lucentia Tech

USA . 1,744 parts In-Stock

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Kulean Microsystems

USA . 1,439 parts In-Stock

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UHIMA Technologies

Türkiye . 896 parts In-Stock

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Component Connect

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Overview

Enhance your electronics with the reliable SZNUP2105LT1G by Onsemi, a top-tier manufacturer known for delivering superior quality. As a Transient Suppression Device, this product offers unparalleled protection against voltage spikes and surges, making it ideal for a wide range of applications. With its common anode configuration and dual element design, this device ensures maximum efficiency and performance. Experience peace of mind knowing that your equipment is safeguarded with the SZNUP2105LT1G, providing value, reliability, and protection all in one compact package.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for efficient transient suppression, providing reliable protection.

Surface Mount: YES

Being surface mountable makes installation quick and easy, saving time and effort during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

With a high maximum power dissipation, this device can handle transient surges effectively, ensuring equipment protection.

Nominal Breakdown Voltage: 29.1 V

The nominal breakdown voltage of 29.1V offers reliable protection against voltage spikes, safeguarding sensitive electronics.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on circuit boards, optimizing space utilization.

No. of Terminals: 3

The three terminals provide secure connections, enhancing the overall reliability of the device.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand harsh environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliability in cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers excellent conductivity and solderability, ensuring secure connections.

Terminal Position: DUAL

The dual terminal position allows for flexibility in installation and connection options.

Minimum Breakdown Voltage: 26.2 V

The minimum breakdown voltage of 26.2V provides an added layer of protection for sensitive components.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature ensures proper soldering without damaging the device.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260C allows for reliable soldering during assembly.

Maximum Breakdown Voltage: 32 V

The high maximum breakdown voltage of 32V enhances the overall protection capabilities of the device.

Reference Standard: AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Compliance with industry standards like AEC-Q101 and IEC-61000-4 ensures quality and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology offers efficient transient voltage suppression for enhanced equipment protection.

Technology: AVALANCHE

The avalanche technology used in this device ensures fast response time and reliable transient suppression performance.

Terminal Form: GULL WING

The gull-wing terminal form allows for easy soldering and secure connections during installation.

No. of Elements: 2

With 2 elements, this device provides dual protection, enhancing overall transient suppression capabilities.

Maximum Repetitive Peak Reverse Voltage: 24 V

The high maximum repetitive peak reverse voltage of 24V ensures long-term reliability and protection against voltage spikes.

Polarity: BIDIRECTIONAL

The bidirectional polarity allows for protection against voltage surges in both directions, increasing versatility.

Maximum Clamping Voltage: 44 V

The maximum clamping voltage of 44V effectively limits transient voltage spikes, preventing damage to downstream components.

Diode Element Material: SILICON

The silicon diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SZNUP2105LT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.2 V

Nominal Breakdown Voltage:

29.1 V

Maximum Clamping Voltage:

44 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNUP2105LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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