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SZNUP2242WTT3G

Onsemi

SZNUP2242WTT3G by Onsemi

SZNUP2242WTT3G by Onsemi is a transient suppression device with 200W power dissipation, 26.2V min breakdown voltage, and bidirectional polarity. Commonly used in automotive electronics for surge protection due to its AEC-Q101 compliance and avalanche technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,617 parts In-Stock

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Digiode

USA . 1,183 parts In-Stock

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Problanco Electronics

Mexico . 6,730 parts In-Stock

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Kulean Microsystems

USA . 3,894 parts In-Stock

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SupplyDigital Components

Austria . 3,121 parts In-Stock

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TANS Electronics

Latvia . 2,847 parts In-Stock

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UHIMA Technologies

Türkiye . 494 parts In-Stock

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Corohmni

South Africa . 466 parts In-Stock

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Corphita

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Overview

Experience superior protection with the SZNUP2242WTT3G by Onsemi. Crafted with precision and quality materials, this transient suppression device offers unparalleled performance for a wide range of applications. From automotive to industrial settings, this common anode diode provides reliable safeguarding against voltage spikes and surges. Trust in Onsemi's reputation for excellence and elevate your electronics with the SZNUP2242WTT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection against environmental factors and enhances durability of the device.

Configuration: COMMON ANODE, 2 ELEMENTS

Allows for efficient voltage clamping and protection for two different circuits.

Surface Mount: YES

Enables easy and convenient installation on PCBs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

High power dissipation capability ensures effective handling of transient surges.

No. of Terminals: 3

Provides necessary connections for proper functioning of the device.

Maximum Operating Temperature: 150 °C

Ensures reliable performance even in high temperature environments.

Minimum Operating Temperature: -55 °C

Allows for operation in a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and solderability.

Minimum Breakdown Voltage: 26.2 V

Provides effective clamping voltage to protect connected circuits.

Peak Reflow Temperature: 260 C

Can withstand high reflow temperatures during assembly.

Reference Standard: AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Compliance with industry standards ensures high quality and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression applications.

Technology: AVALANCHE

Avalanche technology allows for rapid response to transient surges.

Maximum Repetitive Peak Reverse Voltage: 24 V

Suitable for applications requiring protection up to 24V.

Polarity: BIDIRECTIONAL

Protects against surges in both directions, making it versatile for various applications.

Diode Element Material: SILICON

Silicon diodes offer reliable performance and low leakage current.

Technical Specifications

Transient Suppression Devices SZNUP2242WTT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.2 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

24 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNUP2242WTT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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