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SZNUP1301ML3T1G

Onsemi

SZNUP1301ML3T1G by Onsemi

SZNUP1301ML3T1G by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 70V max repetitive peak reverse voltage and 0.215A max output current. It operates at a max temperature of 150°C, making it suitable for transient suppression applications in surface mount technology.

Median Price

$0.115

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 69,000 parts In-Stock

1+ parts

$0.100

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$0.100

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$0.100

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69,000

$0.100

$0.100

$0.100

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Adafruit Industries

USA . 65 parts In-Stock

1+ parts

$0.115

100+ parts

$0.106

1k+ parts

$0.099

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65

$0.115

$0.106

$0.099

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Arrow

USA . 106 parts In-Stock

1+ parts

$0.402

100+ parts

$0.119

1k+ parts

$0.092

10k+ parts

$0.055

106

$0.402

$0.119

$0.092

$0.055

Mouser Electronics

USA . 985 parts In-Stock

1+ parts

$0.440

100+ parts

$0.156

1k+ parts

$0.107

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$0.081

985

$0.440

$0.156

$0.107

$0.081

Verical

USA . 12,000 parts In-Stock

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$0.060

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$0.060

Chip1Stop

Japan . 67 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,334 parts In-Stock

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$0.053

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1,334

$0.053

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Nova Conductors

Japan . 50 parts In-Stock

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$0.099

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50

$0.099

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Bristol Electronics

USA . 100,000 parts In-Stock

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Flip Electronics

USA . 78,000 parts In-Stock

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Chip Stock

USA . 53,000 parts In-Stock

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Vyrian

USA . 9,241 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,413 parts In-Stock

1+ parts

$0.048

100+ parts

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9,413

$0.048

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Semicontronic

India . 9,241 parts In-Stock

1+ parts

$0.048

100+ parts

$0.047

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$0.047

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9,241

$0.048

$0.047

$0.047

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Corphita

USA . 1,830 parts In-Stock

1+ parts

$0.050

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1,830

$0.050

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Corohmni

South Africa . 88 parts In-Stock

1+ parts

$0.056

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88

$0.056

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Aztec Data Supply Inc.

USA . 1,309 parts In-Stock

1+ parts

$0.088

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1,309

$0.088

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Argo Parts USA

USA . 160 parts In-Stock

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$0.099

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$0.096

160

$0.099

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$0.096

Advanced Electronics

New Zealand . 65 parts In-Stock

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$0.115

100+ parts

$0.106

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$0.099

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65

$0.115

$0.106

$0.099

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Infinite Electronics LLP (Excess)

. 100,007 parts In-Stock

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100,007

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Continental Prestige Electronics

USA . 14,727 parts In-Stock

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$0.091

1k+ parts

$0.071

10k+ parts

$0.052

14,727

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$0.091

$0.071

$0.052

Lixinc

USA . 13,123 parts In-Stock

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Perfect Parts

USA . 7,757 parts In-Stock

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TANS Electronics

Latvia . 5,015 parts In-Stock

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Problanco Electronics

Mexico . 4,019 parts In-Stock

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Kulean Microsystems

USA . 3,391 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.097

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$0.094

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$0.092

1,000

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$0.097

$0.094

$0.092

SupplyDigital Components

Austria . 613 parts In-Stock

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UHIMA Technologies

Türkiye . 488 parts In-Stock

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488

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

USA . 100 parts In-Stock

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100

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Overview

Enhance your electronic designs with the SZNUP1301ML3T1G by Onsemi, a top-of-the-line transient suppression device that guarantees superior quality and reliability. Manufactured by industry leader Onsemi, this surface mount diode offers maximum protection against voltage spikes, ensuring the longevity of your circuits. Ideal for a wide range of applications, this device is perfect for safeguarding sensitive electronics from damage. Trust in Onsemi's expertise and invest in the SZNUP1301ML3T1G for unbeatable value and performance.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand a wide range of environmental conditions without experiencing performance degradation.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and ensures reliable electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds minimizes the risk of thermal damage during assembly.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this product can withstand the reflow soldering process without compromising its performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes provide effective transient voltage suppression, protecting the circuit from voltage spikes and ensuring reliable operation.

Maximum Forward Voltage (VF): 0.715 V

Low maximum forward voltage results in minimal power loss and helps in maintaining the efficiency of the circuit.

Maximum Output Current: 0.215 A

The high maximum output current rating allows the product to handle large transient currents effectively, providing robust protection to the circuit.

Technology: AVALANCHE

Avalanche technology ensures fast response time and high energy handling capabilities, making it suitable for applications where quick transient suppression is required.

Maximum Repetitive Peak Reverse Voltage: 70 V

The high maximum repetitive peak reverse voltage rating ensures reliable protection against reversed voltage conditions, increasing the durability of the product.

Maximum Non Repetitive Peak Forward Current: 2 A

The high maximum non-repetitive peak forward current rating allows the product to handle short-duration high-current events effectively, providing robust transient suppression.

Diode Element Material: SILICON

Silicon diode element material offers high electrical conductivity and temperature stability, ensuring reliable and consistent performance under varying operating conditions.

Technical Specifications

Transient Suppression Devices SZNUP1301ML3T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.715 V

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.215 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNUP1301ML3T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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