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SZNUP1128HT1G

Onsemi

SZNUP1128HT1G by Onsemi

SZNUP1128HT1G by Onsemi is a single bidirectional avalanche diode with 31V breakdown voltage, 0.1uA reverse current, and 55V clamping voltage. It is used in transient suppression applications for protecting sensitive electronics from voltage spikes.

Median Price

$0.055

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,265 parts In-Stock

1+ parts

$0.350

100+ parts

$0.093

1k+ parts

$0.085

10k+ parts

$0.050

1,265

$0.350

$0.093

$0.085

$0.050

Arrow

USA . 27,000 parts In-Stock

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$0.052

27,000

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$0.052

Verical

USA . 27,000 parts In-Stock

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$0.052

27,000

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$0.052

Chip1Stop

Japan . 27,000 parts In-Stock

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$0.058

27,000

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$0.058

Distributors (In-Stock)

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Vyrian

USA . 1,533 parts In-Stock

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$0.052

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$0.052

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Digiode

USA . 2,358 parts In-Stock

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$0.332

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2,358

$0.332

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Flip Electronics

USA . 108,000 parts In-Stock

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108,000

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Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

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6,000

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NAC Semi

USA . 6,000 parts In-Stock

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$0.068

6,000

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$0.068

Distributors (Availability)

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Ampacity Inc.

Singapore . 17,447 parts In-Stock

1+ parts

$0.044

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17,447

$0.044

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Corohmni

South Africa . 370 parts In-Stock

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$0.052

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370

$0.052

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Corphita

USA . 1,801 parts In-Stock

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$0.315

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1,801

$0.315

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GreenTree Electronics

Israel . 48,000 parts In-Stock

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48,000

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SupplyDigital Components

Austria . 6,625 parts In-Stock

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Lixinc

USA . 6,400 parts In-Stock

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6,400

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TANS Electronics

Latvia . 4,933 parts In-Stock

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4,933

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Problanco Electronics

Mexico . 2,983 parts In-Stock

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2,983

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UHIMA Technologies

Türkiye . 247 parts In-Stock

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247

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Kulean Microsystems

USA . 8 parts In-Stock

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Overview

Discover the ultimate protection with the SZNUP1128HT1G by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi delivers top-notch quality and reliability. This single-configured device is ideal for a wide range of applications, providing peace of mind against voltage surges. With its bidirectional polarity and high clamping voltage, this diode offers exceptional performance while ensuring the safety of your electronic components. Trust Onsemi to keep your systems safeguarded and operating smoothly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, ensuring long-lasting performance.

Nominal Breakdown Voltage: 31 V

The high breakdown voltage provides effective protection against voltage spikes and surges, safeguarding connected electronic components.

Maximum Reverse Current: 0.1 uA

The low reverse current ensures minimal power dissipation and improved efficiency during operation.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function reliably even in extreme environments.

Reference Standard: AEC-Q101; IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

Compliance with various international standards ensures the product meets quality and safety requirements for widespread use.

Technical Specifications

Transient Suppression Devices SZNUP1128HT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

35.5 V

Minimum Breakdown Voltage:

27.5 V

Nominal Breakdown Voltage:

31 V

Maximum Clamping Voltage:

55 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

165 W

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

Maximum Repetitive Peak Reverse Voltage:

26.5 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

26.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNUP1128HT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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