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SZNUP4301MR6T1G

Onsemi

SZNUP4301MR6T1G by Onsemi

SZNUP4301MR6T1G by Onsemi is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 70V breakdown voltage. It uses AVALANCHE technology and matte tin finish for surface mount applications. Ideal for protecting electronic circuits from transient voltage spikes in various devices.

Median Price

$0.282

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 75 parts In-Stock

1+ parts

$0.021

100+ parts

$0.020

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$0.020

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75

$0.021

$0.020

$0.020

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Rochester

USA . 48,000 parts In-Stock

1+ parts

$0.360

100+ parts

$0.350

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$0.350

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48,000

$0.360

$0.350

$0.350

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Mouser Electronics

USA . 21,799 parts In-Stock

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$0.245

21,799

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$0.245

DigiKey

USA . 3,000 parts In-Stock

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$0.320

3,000

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$0.320

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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3,000

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Digiode

USA . 1,108 parts In-Stock

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$0.020

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$0.020

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Nova Conductors

Japan . 61 parts In-Stock

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$0.282

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61

$0.282

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Chip Stock

USA . 19,000 parts In-Stock

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Vyrian

USA . 15,022 parts In-Stock

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 15,105 parts In-Stock

1+ parts

$0.018

100+ parts

$0.018

1k+ parts

$0.017

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15,105

$0.018

$0.018

$0.017

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Ampacity Inc.

Singapore . 14,949 parts In-Stock

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$0.018

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14,949

$0.018

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Corphita

USA . 201 parts In-Stock

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$0.019

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201

$0.019

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Advanced Electronics

New Zealand . 75 parts In-Stock

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$0.021

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$0.020

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$0.020

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75

$0.021

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Corohmni

South Africa . 405 parts In-Stock

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$0.021

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405

$0.021

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Aztec Data Supply Inc.

USA . 1,270 parts In-Stock

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$0.140

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1,270

$0.140

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Aranea Global

USA . 50 parts In-Stock

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$0.277

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$0.266

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50

$0.277

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$0.266

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Argo Parts USA

USA . 3,542 parts In-Stock

1+ parts

$0.282

100+ parts

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$0.274

3,542

$0.282

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$0.274

Continental Prestige Electronics

USA . 2,682 parts In-Stock

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$0.282

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$0.277

2,682

$0.282

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$0.277

Kepictronics

USA . 66,540 parts In-Stock

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Lixinc

USA . 6,964 parts In-Stock

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Kulean Microsystems

USA . 6,584 parts In-Stock

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SupplyDigital Components

Austria . 5,525 parts In-Stock

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TANS Electronics

Latvia . 3,633 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,838 parts In-Stock

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Problanco Electronics

Mexico . 974 parts In-Stock

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UHIMA Technologies

Türkiye . 302 parts In-Stock

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Overview

Looking for top-quality transient suppression devices? Look no further than the SZNUP4301MR6T1G by Onsemi! With a reputation for excellence in manufacturing, Onsemi delivers reliable and durable products. Ideal for a range of applications, this diode offers bidirectional protection with a nominal breakdown voltage of 70V. Trust in Onsemi to provide superior technology and peace of mind against voltage surges. Upgrade your electronics with the SZNUP4301MR6T1G today and experience the benefits firsthand.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes installation easy and convenient, especially for compact electronic devices.

Nominal Breakdown Voltage: 70V

The high nominal breakdown voltage of 70V provides reliable protection against voltage spikes and surges, ensuring the safety of connected electronic components.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and protection against oxidation, ensuring a reliable and durable connection.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds helps prevent thermal damage during the soldering process, ensuring the longevity of the component.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this component can withstand high-temperature soldering processes, making it suitable for a wide range of manufacturing environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor Diode type ensures efficient transient voltage suppression, providing reliable protection for sensitive electronic circuits.

Technology: AVALANCHE

Utilizing avalanche technology enhances the device's performance in clamping transient voltages and provides faster response times, thereby improving overall system reliability.

Maximum Repetitive Peak Reverse Voltage: 70V

The maximum repetitive peak reverse voltage of 70V allows the component to protect against repeated voltage spikes without degradation, ensuring consistent and long-term performance.

Polarity: BIDIRECTIONAL

With bidirectional polarity, this component can suppress voltage surges in both directions, providing comprehensive protection for electronic circuits.

Diode Element Material: SILICON

Using silicon as the diode element material offers high efficiency in suppressing transient voltages and ensures reliable performance over an extended lifespan.

Technical Specifications

Transient Suppression Devices SZNUP4301MR6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Nominal Breakdown Voltage:

70 V

Diode Element Material:

SILICON

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNUP4301MR6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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