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SZNUP4114HMR6T1G

Onsemi

SZNUP4114HMR6T1G by Onsemi

SZNUP4114HMR6T1G by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 6.5V Breakdown Voltage and 1uA Max Reverse Current. It is used for transient suppression in applications requiring protection against voltage spikes, with a package style of SMALL OUTLINE suitable for surface mount assembly. Operating temperature ranges from -40 to 125 °C, making it ideal for various electronic devices needing reliable overvoltage protection.

Median Price

$0.295

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 2 parts In-Stock

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$0.230

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2

$0.230

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Mouser Electronics

USA . 16,884 parts In-Stock

1+ parts

$1.240

100+ parts

$0.506

1k+ parts

$0.392

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16,884

$1.240

$0.506

$0.392

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DigiKey

USA . 5,104 parts In-Stock

1+ parts

$1.240

100+ parts

$0.511

1k+ parts

$0.359

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5,104

$1.240

$0.511

$0.359

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Arrow

USA . 279,000 parts In-Stock

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$0.257

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Verical

USA . 279,000 parts In-Stock

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$0.259

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Avnet

USA . 6,000 parts In-Stock

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6,000

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Rochester

USA . 3,000 parts In-Stock

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$0.331

1k+ parts

$0.275

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$0.245

3,000

-

$0.331

$0.275

$0.245

Distributors (In-Stock)

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Digiode

USA . 901 parts In-Stock

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$0.218

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901

$0.218

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Nova Conductors

Japan . 10 parts In-Stock

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$0.475

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10

$0.475

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Bristol Electronics

USA . 8,380 parts In-Stock

1+ parts

$0.750

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$0.278

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$0.195

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8,380

$0.750

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Flip Electronics

USA . 69,440 parts In-Stock

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ComSIT Distribution GmbH

Germany . 27,890 parts In-Stock

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ComSIT USA

USA . 27,890 parts In-Stock

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Chip Stock

USA . 16,000 parts In-Stock

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Vyrian

USA . 9,302 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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J2 Sourcing AB

Sweden . 240 parts In-Stock

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Prism Electronics

USA . 20 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,822 parts In-Stock

1+ parts

$0.060

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1,822

$0.060

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.127

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$0.120

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$0.120

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3,000

$0.127

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$0.120

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Ampacity Inc.

Singapore . 9,330 parts In-Stock

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$0.196

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Semicontronic

India . 9,021 parts In-Stock

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$0.196

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$0.191

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$0.190

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Corphita

USA . 1,541 parts In-Stock

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$0.207

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Corohmni

South Africa . 424 parts In-Stock

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$0.230

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Aranea Global

USA . 500 parts In-Stock

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$0.465

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$0.447

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Argo Parts USA

USA . 874 parts In-Stock

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$0.475

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$0.461

874

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Continental Prestige Electronics

USA . 67 parts In-Stock

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Perfect Parts

USA . 87,360 parts In-Stock

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Lixinc

USA . 9,265 parts In-Stock

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SupplyDigital Components

Austria . 8,194 parts In-Stock

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TANS Electronics

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Kepictronics

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Cyclops Electronics Ltd (Excess)

UK . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,020 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,857 parts In-Stock

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UHIMA Technologies

Türkiye . 735 parts In-Stock

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Futuretech Components

Singapore . 520 parts In-Stock

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Problanco Electronics

Mexico . 58 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the SZNUP4114HMR6T1G by Onsemi. With a reputation for quality and innovation, Onsemi delivers top-notch products that exceed industry standards. Ideal for a wide range of applications, this diode offers superior protection against voltage spikes. Say goodbye to potential damage and downtime with this high-performance device. Trust Onsemi to provide you with the best solution for your protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protects the internal components from external factors, making the product long-lasting.

Nominal Breakdown Voltage: 6.5 V

With a high nominal breakdown voltage of 6.5V, this product can effectively suppress transient voltage spikes and protect sensitive electronic components in a circuit.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures that the device can withstand harsh environmental conditions without compromising its performance.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards such as AEC-Q101 and IEC-61000-4-2 ensures reliability, quality, and compatibility with various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor diode technology effectively clamps transient voltages to a safe level, preventing damage to connected devices.

Technical Specifications

Transient Suppression Devices SZNUP4114HMR6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

5.5 V

Nominal Breakdown Voltage:

6.5 V

Maximum Clamping Voltage:

10 V

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

5

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

5.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

SZNUP4114HMR6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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