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SZNUP3105LT3G

Onsemi

SZNUP3105LT3G by Onsemi

SZNUP3105LT3G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 2 bidirectional elements. It has a breakdown voltage of 35.6V, max power dissipation of 350W, and operates b/w -55 to 150°C. Commonly used in transient suppression applications meeting AEC-Q101 and IEC-61000-4-5 standards.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 20,000 parts In-Stock

1+ parts

$0.316

100+ parts

$0.222

1k+ parts

$0.135

10k+ parts

$0.134

20,000

$0.316

$0.222

$0.135

$0.134

DigiKey

USA . 7,378 parts In-Stock

1+ parts

$0.790

100+ parts

$0.317

1k+ parts

$0.217

10k+ parts

$0.174

7,378

$0.790

$0.317

$0.217

$0.174

Mouser Electronics

USA . 544 parts In-Stock

1+ parts

$0.790

100+ parts

$0.317

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-

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544

$0.790

$0.317

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Chip1Stop

Japan . 19,750 parts In-Stock

1+ parts

-

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$0.205

1k+ parts

$0.160

10k+ parts

$0.143

19,750

-

$0.205

$0.160

$0.143

Master Electronics

USA . 3,723 parts In-Stock

1+ parts

-

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-

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$0.206

10k+ parts

$0.150

3,723

-

-

$0.206

$0.150

Verical

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.242

10k+ parts

$0.228

3,500

-

-

$0.242

$0.228

Rochester

USA . 20 parts In-Stock

1+ parts

-

100+ parts

$0.177

1k+ parts

$0.147

10k+ parts

$0.131

20

-

$0.177

$0.147

$0.131

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 727 parts In-Stock

1+ parts

$0.138

100+ parts

-

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727

$0.138

-

-

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Nova Conductors

Japan . 71 parts In-Stock

1+ parts

$0.189

100+ parts

-

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71

$0.189

-

-

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Bristol Electronics

USA . 5,615 parts In-Stock

1+ parts

$0.675

100+ parts

$0.338

1k+ parts

$0.135

10k+ parts

$0.101

5,615

$0.675

$0.338

$0.135

$0.101

Chip Stock

USA . 403,100 parts In-Stock

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Vyrian

USA . 25,326 parts In-Stock

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25,326

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NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.210

20,000

-

-

-

$0.210

Electro Sonic

Canada . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.137

10,000

-

-

-

$0.137

Pegasus Components GmbH

Germany . 330 parts In-Stock

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330

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Prism Electronics

USA . 10 parts In-Stock

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10

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Distributors (Availability)

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Semicontronic

India . 25,662 parts In-Stock

1+ parts

$0.112

100+ parts

$0.109

1k+ parts

$0.109

10k+ parts

-

25,662

$0.112

$0.109

$0.109

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Ampacity Inc.

Singapore . 25,441 parts In-Stock

1+ parts

$0.112

100+ parts

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25,441

$0.112

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.117

100+ parts

$0.112

1k+ parts

$0.112

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40

$0.117

$0.112

$0.112

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Aztec Data Supply Inc.

USA . 3,850 parts In-Stock

1+ parts

$0.130

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3,850

$0.130

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Corphita

USA . 1,155 parts In-Stock

1+ parts

$0.130

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$0.130

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Corohmni

South Africa . 267 parts In-Stock

1+ parts

$0.132

100+ parts

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267

$0.132

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

$0.177

10k+ parts

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2,000

$0.185

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$0.177

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Continental Prestige Electronics

USA . 4,869 parts In-Stock

1+ parts

$0.189

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$0.185

4,869

$0.189

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$0.185

Argo Parts USA

USA . 3,459 parts In-Stock

1+ parts

$0.189

100+ parts

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1k+ parts

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$0.183

3,459

$0.189

-

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$0.183

Robosynatics

Brazil . 22,076 parts In-Stock

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22,076

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Lucentia Tech

USA . 22,076 parts In-Stock

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$0.021

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$0.020

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$0.020

22,076

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$0.020

$0.020

Lixinc

USA . 18,968 parts In-Stock

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18,968

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Problanco Electronics

Mexico . 8,243 parts In-Stock

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Kulean Microsystems

USA . 4,531 parts In-Stock

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4,531

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TANS Electronics

Latvia . 3,632 parts In-Stock

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3,632

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SupplyDigital Components

Austria . 3,190 parts In-Stock

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3,190

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UHIMA Technologies

Türkiye . 762 parts In-Stock

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762

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Modulus Dynamics

Lithuania . 69 parts In-Stock

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69

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Overview

Enhance your electronic devices with the SZNUP3105LT3G by Onsemi, a top-tier manufacturer in the field of transient suppression devices. With a common cathode configuration and 2 elements, this component offers superior protection against power surges, ensuring the longevity and reliability of your equipment. Ideal for a wide range of applications, this diode is designed to perform under extreme conditions with a maximum operating temperature of 150°C. Trust in Onsemi's expertise and invest in the SZNUP3105LT3G for unbeatable quality and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the components inside, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

The high maximum peak reverse power dissipation capability allows the device to handle sudden voltage spikes or surges effectively, protecting the connected circuitry from damage.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand elevated temperatures without compromising its performance, making it suitable for a wide range of environments.

Minimum Breakdown Voltage: 35.6 V

The minimum breakdown voltage of 35.6 V ensures that the device activates when the voltage exceeds this threshold, providing reliable protection against overvoltage conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, this device is specifically designed to suppress transient voltages, making it an ideal choice for applications where protection against voltage spikes is crucial.

Technical Specifications

Transient Suppression Devices SZNUP3105LT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Minimum Breakdown Voltage:

35.6 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

32 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SZNUP3105LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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