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SZNUP4304MR6T1G

Onsemi

SZNUP4304MR6T1G by Onsemi

SZNUP4304MR6T1G by Onsemi is a Trans Voltage Suppressor Diode with 70V Breakdown Voltage, AEC-Q101 Standard, and Avalanche Technology. It is used for transient suppression in automotive applications due to its Unidirectional Polarity and Matte Tin Terminal Finish.

Median Price

$0.231

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 123,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.160

123,000

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$0.160

Flip Electronics (Authorized)

USA . 123,000 parts In-Stock

1+ parts

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123,000

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Farnell

UK . 2,550 parts In-Stock

1+ parts

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$0.231

2,550

-

-

-

$0.231

Rochester

USA . 2,550 parts In-Stock

1+ parts

-

100+ parts

$0.290

1k+ parts

$0.241

10k+ parts

$0.215

2,550

-

$0.290

$0.241

$0.215

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,878 parts In-Stock

1+ parts

$0.237

100+ parts

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1,878

$0.237

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Flip Electronics

USA . 123,000 parts In-Stock

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123,000

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Chip Stock

USA . 73,000 parts In-Stock

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Vyrian

USA . 46,712 parts In-Stock

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46,712

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 310 parts In-Stock

1+ parts

$0.110

100+ parts

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310

$0.110

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Ampacity Inc.

Singapore . 46,565 parts In-Stock

1+ parts

$0.196

100+ parts

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46,565

$0.196

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Corphita

USA . 1,974 parts In-Stock

1+ parts

$0.224

100+ parts

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1,974

$0.224

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Corohmni

South Africa . 119 parts In-Stock

1+ parts

$0.231

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119

$0.231

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TANS Electronics

Latvia . 4,059 parts In-Stock

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4,059

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Continental Prestige Electronics

USA . 3,396 parts In-Stock

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3,396

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SupplyDigital Components

Austria . 2,206 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,907 parts In-Stock

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1,907

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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1,500

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Problanco Electronics

Mexico . 868 parts In-Stock

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868

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Argo Parts USA

USA . 783 parts In-Stock

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783

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Kulean Microsystems

USA . 287 parts In-Stock

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287

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UHIMA Technologies

Türkiye . 62 parts In-Stock

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62

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Overview

Discover the SZNUP4304MR6T1G by Onsemi, a top-tier manufacturer in the category of Transient Suppression Devices. This innovative product offers unmatched quality and reliability, making it a perfect choice for a wide range of applications. From automotive to industrial settings, this device ensures optimal protection against voltage spikes, providing peace of mind and long-lasting performance. Experience the value and benefits of choosing Onsemi's SZNUP4304MR6T1G, where quality meets innovation for superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the device durable and resistant to high temperatures, ensuring a long lifespan and reliable performance.

Surface Mount: YES

Being surface mountable makes installation easier and allows for compact designs in electronic circuits.

Nominal Breakdown Voltage: 70 V

This voltage level provides effective protection against transient voltage spikes and ensures the safety of connected components.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand harsh environmental conditions without sacrificing performance.

Peak Reflow Temperature °C: 260

The device can endure high peak reflow temperatures during manufacturing processes, ensuring proper soldering and reliability.

Technology: AVALANCHE

The avalanche technology used in this device allows for efficient and rapid clamping of transient voltage spikes, protecting sensitive electronics.

Polarity: UNIDIRECTIONAL

Having unidirectional polarity ensures that transient voltage spikes are properly clamped in one direction, providing targeted protection for connected components.

Technical Specifications

Transient Suppression Devices SZNUP4304MR6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

70 V

Nominal Breakdown Voltage:

70 V

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

8

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

70 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNUP4304MR6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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