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SZNUP2115LT1G

Onsemi

SZNUP2115LT1G by Onsemi

SZNUP2115LT1G by Onsemi is a Zener diode with 2 elements, common anode config, and bidirectional polarity. It has a max clamping voltage of 44V and operates b/w -55 to 150°C. Ideal for transient suppression in automotive electronics and industrial applications.

Median Price

$0.950

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,950 parts In-Stock

1+ parts

$0.950

100+ parts

$0.382

1k+ parts

$0.264

10k+ parts

-

5,950

$0.950

$0.382

$0.264

-

Mouser Electronics

USA . 133 parts In-Stock

1+ parts

$0.950

100+ parts

$0.382

1k+ parts

$0.265

10k+ parts

$0.215

133

$0.950

$0.382

$0.265

$0.215

Chip1Stop

Japan . 800 parts In-Stock

1+ parts

$2.020

100+ parts

$0.588

1k+ parts

$0.442

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-

800

$2.020

$0.588

$0.442

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Arrow

USA . 3,000 parts In-Stock

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$0.209

3,000

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$0.209

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.210

3,000

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$0.210

Flip Electronics (Authorized)

USA . 278 parts In-Stock

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278

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Distributors (In-Stock)

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Digiode

USA . 891 parts In-Stock

1+ parts

$0.201

100+ parts

-

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891

$0.201

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Bristol Electronics

USA . 280 parts In-Stock

1+ parts

$0.525

100+ parts

$0.263

1k+ parts

$0.184

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280

$0.525

$0.263

$0.184

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.629

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10

$0.629

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Chip Stock

USA . 93,241 parts In-Stock

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Vyrian

USA . 3,563 parts In-Stock

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3,563

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Flip Electronics

USA . 278 parts In-Stock

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278

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Microfarads

USA . 265 parts In-Stock

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265

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Elcom Components

USA . 29 parts In-Stock

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29

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,903 parts In-Stock

1+ parts

$0.161

100+ parts

-

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3,903

$0.161

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Semicontronic

India . 3,623 parts In-Stock

1+ parts

$0.161

100+ parts

$0.157

1k+ parts

$0.156

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3,623

$0.161

$0.157

$0.156

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Corohmni

South Africa . 338 parts In-Stock

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$0.165

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338

$0.165

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Corphita

USA . 471 parts In-Stock

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$0.191

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471

$0.191

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Continental Prestige Electronics

USA . 6,269 parts In-Stock

1+ parts

$0.629

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$0.616

6,269

$0.629

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$0.616

Argo Parts USA

USA . 305 parts In-Stock

1+ parts

$0.629

100+ parts

-

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$0.610

305

$0.629

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$0.610

RC Electronics

USA . 99,257 parts In-Stock

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Perfect Parts

USA . 19,824 parts In-Stock

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Lixinc

USA . 16,156 parts In-Stock

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TANS Electronics

Latvia . 7,638 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,796 parts In-Stock

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Kulean Microsystems

USA . 4,243 parts In-Stock

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SupplyDigital Components

Austria . 4,157 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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2,400

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Netroflash

USA . 1,000 parts In-Stock

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$0.616

1k+ parts

$0.597

10k+ parts

$0.585

1,000

-

$0.616

$0.597

$0.585

Authorized Procurement Solutions

USA . 800 parts In-Stock

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800

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GreenTree Electronics

Israel . 800 parts In-Stock

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800

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UHIMA Technologies

Türkiye . 669 parts In-Stock

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669

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Problanco Electronics

Mexico . 226 parts In-Stock

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226

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Overview

Protect your electronics with the SZNUP2115LT1G by Onsemi, a top-quality transient suppression device designed for maximum performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product offers superior protection against voltage spikes and surges, ensuring the longevity of your valuable equipment. Ideal for a wide range of applications, this common anode diode is perfect for use in automotive, industrial, and consumer electronics. Invest in the SZNUP2115LT1G today and enjoy peace of mind knowing your devices are safeguarded with the best in the market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical and thermal properties, making the device durable and reliable.

Config: COMMON ANODE, 2 ELEMENTS

Effective in suppressing transient voltage spikes by using common anode configuration and having 2 elements.

Maximum Non Repetitive Peak Reverse Power Dissipation: 200 W

Capable of handling high power surges, protecting the connected circuitry effectively.

Nominal Breakdown Voltage: 29.1 V

Helps in clamping the voltage at a safe level and providing protection to the connected components.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving space and streamlining the manufacturing process.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, ensuring reliability in various applications.

Reference Standard: AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Compliance with industry standards ensures quality, performance, and reliability of the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, providing excellent protection to sensitive electronics.

Technical Specifications

Transient Suppression Devices SZNUP2115LT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.2 V

Nominal Breakdown Voltage:

29.1 V

Maximum Clamping Voltage:

44 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

200 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SZNUP2115LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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