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SZNUP2201MR6T1G

Onsemi

SZNUP2201MR6T1G by Onsemi

SZNUP2201MR6T1G by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 6V breakdown voltage, 5V peak reverse voltage, and 20V clamping voltage. It is ideal for transient suppression applications in electronics due to its avalanche technology and unidirectional polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 26,000 parts In-Stock

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Digiode

USA . 1,719 parts In-Stock

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1,719

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Vyrian

USA . 202 parts In-Stock

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202

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Aztec Data Supply Inc.

USA . 163 parts In-Stock

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$0.080

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163

$0.080

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.114

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$0.109

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$0.109

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40

$0.114

$0.109

$0.109

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Semicontronic

India . 1,502 parts In-Stock

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$2.010

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$1.960

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$1.950

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1,502

$2.010

$1.960

$1.950

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Ampacity Inc.

Singapore . 659 parts In-Stock

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$3.010

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659

$3.010

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AZTECH Wire

Italy . 292 parts In-Stock

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$18.906

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A-Z Elektronik GmbH

Germany . 6,852 parts In-Stock

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Continental Prestige Electronics

USA . 6,742 parts In-Stock

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Kulean Microsystems

USA . 6,501 parts In-Stock

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Problanco Electronics

Mexico . 4,171 parts In-Stock

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Argo Parts USA

USA . 2,383 parts In-Stock

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SupplyDigital Components

Austria . 1,886 parts In-Stock

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TANS Electronics

Latvia . 1,519 parts In-Stock

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Corphita

USA . 612 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

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$0.616

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$0.616

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$0.616

500

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$0.616

$0.616

Modulus Dynamics

Lithuania . 450 parts In-Stock

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Corohmni

South Africa . 420 parts In-Stock

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UHIMA Technologies

Türkiye . 140 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Looking for top-quality transient suppression devices? Look no further than the SZNUP2201MR6T1G by Onsemi. With a reputation for excellence, Onsemi is a trusted manufacturer known for producing reliable electronic components. This diode type TRANS VOLTAGE SUPPRESSOR DIODE offers superior protection against voltage spikes, making it ideal for a wide range of applications. Ensure the safety and longevity of your electronics with the SZNUP2201MR6T1G from Onsemi.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Nominal Breakdown Voltage: 6 V

With a nominal breakdown voltage of 6V, this device provides protection against transient voltage spikes up to this level, ensuring the safe operation of connected electronics.

Terminal Finish: TIN

The terminal finish of Tin provides good solderability and ensures reliable electrical connections, contributing to the overall quality and longevity of the device.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time allowed at peak reflow temperature of 30 seconds ensures proper soldering during assembly, preventing overheating and damage to the device.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper melting of solder during assembly, leading to strong and reliable solder joints.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed to suppress transient voltage spikes effectively, protecting sensitive electronic components from damage.

Technology: AVALANCHE

The use of avalanche technology allows for high energy absorption capability, making this device suitable for handling high transient voltage events without degradation.

Maximum Repetitive Peak Reverse Voltage: 5 V

With a maximum repetitive peak reverse voltage of 5V, this device can safely handle voltage spikes and surges up to this level, providing reliable protection for connected equipment.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of the device ensures that it only conducts current in one direction, effectively suppressing transient voltage spikes in a specific direction.

Maximum Clamping Voltage: 20 V

The maximum clamping voltage of 20V indicates the level at which the device limits the voltage during a transient event, preventing it from reaching harmful levels that could damage connected electronics.

Diode Element Material: SILICON

Silicon is a common material for diodes known for its reliability and efficiency in suppressing transient voltage spikes, making this device a dependable choice for circuit protection.

Technical Specifications

Transient Suppression Devices SZNUP2201MR6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Nominal Breakdown Voltage:

6 V

Maximum Clamping Voltage:

20 V

Diode Element Material:

SILICON

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNUP2201MR6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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