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SZNUP3125WTT1G

Onsemi

SZNUP3125WTT1G by Onsemi

SZNUP3125WTT1G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 2 bidirectional elements. It has a max clamping voltage of 60V and breakdown voltage of 39V, making it ideal for transient suppression applications in electronics. The device comes in a small outline package with matte tin terminal finish, suitable for surface mount assembly processes at temperatures ranging from -55°C to 150°C.

Median Price

$0.610

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 17,667 parts In-Stock

1+ parts

$0.600

100+ parts

$0.236

1k+ parts

$0.154

10k+ parts

$0.131

17,667

$0.600

$0.236

$0.154

$0.131

DigiKey

USA . 412 parts In-Stock

1+ parts

$0.620

100+ parts

$0.244

1k+ parts

$0.164

10k+ parts

-

412

$0.620

$0.244

$0.164

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Distributors (In-Stock)

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Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$0.141

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72

$0.141

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Digiode

USA . 1,458 parts In-Stock

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$0.399

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1,458

$0.399

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Chip Stock

USA . 33,500 parts In-Stock

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33,500

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Vyrian

USA . 28,938 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,868 parts In-Stock

1+ parts

$0.130

100+ parts

-

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3,868

$0.130

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Corohmni

South Africa . 486 parts In-Stock

1+ parts

$0.135

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486

$0.135

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Argo Parts USA

USA . 4,857 parts In-Stock

1+ parts

$0.141

100+ parts

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$0.137

4,857

$0.141

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-

$0.137

Continental Prestige Electronics

USA . 1,534 parts In-Stock

1+ parts

$0.141

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$0.138

1,534

$0.141

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$0.138

Semicontronic

India . 28,760 parts In-Stock

1+ parts

$0.357

100+ parts

$0.348

1k+ parts

$0.346

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28,760

$0.357

$0.348

$0.346

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Ampacity Inc.

Singapore . 28,508 parts In-Stock

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$0.357

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28,508

$0.357

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Corphita

USA . 136 parts In-Stock

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$0.378

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136

$0.378

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RC Electronics

USA . 74,418 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 17,596 parts In-Stock

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SupplyDigital Components

Austria . 6,997 parts In-Stock

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Kulean Microsystems

USA . 6,103 parts In-Stock

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TANS Electronics

Latvia . 5,357 parts In-Stock

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Perfect Parts

USA . 3,965 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.138

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$0.134

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$0.131

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$0.134

$0.131

Problanco Electronics

Mexico . 992 parts In-Stock

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UHIMA Technologies

Türkiye . 278 parts In-Stock

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Advanced Electronics

New Zealand . 64 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the SZNUP3125WTT1G by Onsemi. With a reputation for high-quality products and cutting-edge technology, Onsemi delivers top-of-the-line solutions for a wide range of applications. The SZNUP3125WTT1G offers superior protection with its common cathode configuration and bidirectional polarity, ensuring peace of mind for your electronic systems. Trust Onsemi to provide unmatched value and performance with every product they offer. Experience the difference with the SZNUP3125WTT1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 120 W

Ensures the device can handle high power surges without being damaged, increasing its reliability.

Nominal Breakdown Voltage: 39 V

Offers effective protection against voltage spikes and transients to safeguard connected equipment.

Maximum Reverse Current: 0.1 uA

Ensures minimal leakage current, enhancing the device's efficiency and performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in diverse environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, providing reliable protection for sensitive electronics.

Technical Specifications

Transient Suppression Devices SZNUP3125WTT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

35.6 V

Nominal Breakdown Voltage:

39 V

Maximum Clamping Voltage:

60 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

120 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101, IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

32 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

32 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZNUP3125WTT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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