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SZNUP4114UCLW1T2G

Onsemi

SZNUP4114UCLW1T2G by Onsemi

SZNUP4114UCLW1T2G by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 6.5V Breakdown Voltage and 1uA Max Reverse Current. It is used for transient suppression in applications requiring UNIDIRECTIONAL protection against voltage spikes, featuring AVALANCHE technology and a max clamping voltage of 10V.

Median Price

$0.217

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 260,604 parts In-Stock

1+ parts

$0.148

100+ parts

-

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10k+ parts

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260,604

$0.148

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Mouser Electronics

USA . 495 parts In-Stock

1+ parts

$0.770

100+ parts

$0.323

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-

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495

$0.770

$0.323

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DigiKey

USA . 611 parts In-Stock

1+ parts

$0.910

100+ parts

$0.367

1k+ parts

$0.253

10k+ parts

-

611

$0.910

$0.367

$0.253

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Chip1Stop

Japan . 260,909 parts In-Stock

1+ parts

-

100+ parts

$0.219

1k+ parts

$0.171

10k+ parts

$0.158

260,909

-

$0.219

$0.171

$0.158

Verical

USA . 260,604 parts In-Stock

1+ parts

-

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$0.148

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260,604

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$0.148

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Rochester

USA . 2,249 parts In-Stock

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$0.215

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$0.178

10k+ parts

$0.159

2,249

-

$0.215

$0.178

$0.159

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 24 parts In-Stock

1+ parts

$0.228

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24

$0.228

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Digiode

USA . 1,581 parts In-Stock

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$0.253

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Flip Electronics

USA . 200,000 parts In-Stock

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Chip Stock

USA . 167,500 parts In-Stock

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Vyrian

USA . 157,095 parts In-Stock

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Bristol Electronics

USA . 124,389 parts In-Stock

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NAC Semi

USA . 18,000 parts In-Stock

1+ parts

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$0.382

18,000

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$0.382

Infinite Electronics LLP

India . 9,000 parts In-Stock

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9,000

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Netsource Technology, Inc.

USA . 6,000 parts In-Stock

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6,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 877 parts In-Stock

1+ parts

$0.050

100+ parts

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877

$0.050

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.094

100+ parts

$0.086

1k+ parts

$0.077

10k+ parts

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100

$0.094

$0.086

$0.077

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Semicontronic

India . 156,828 parts In-Stock

1+ parts

$0.126

100+ parts

$0.123

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$0.122

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156,828

$0.126

$0.123

$0.122

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Corohmni

South Africa . 411 parts In-Stock

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$0.151

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411

$0.151

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Argo Parts USA

USA . 4,562 parts In-Stock

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$0.228

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$0.221

4,562

$0.228

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$0.221

Continental Prestige Electronics

USA . 3,798 parts In-Stock

1+ parts

$0.228

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$0.223

3,798

$0.228

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$0.223

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.228

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$0.217

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$0.212

100

$0.228

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$0.212

Corphita

USA . 2,010 parts In-Stock

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$0.239

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Component Stockers USA

USA . 14,758 parts In-Stock

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$0.270

100+ parts

$0.160

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$0.180

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$0.150

14,758

$0.270

$0.160

$0.180

$0.150

Ampacity Inc.

Singapore . 157,073 parts In-Stock

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$0.274

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Metaverse IC Inc.

Canada . 66,540 parts In-Stock

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Kepictronics

USA . 65,850 parts In-Stock

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Infinite Electronics LLP (Excess)

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Perfect Parts

USA . 7,325 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,615 parts In-Stock

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SupplyDigital Components

Austria . 5,924 parts In-Stock

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TANS Electronics

Latvia . 4,353 parts In-Stock

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Kulean Microsystems

USA . 3,983 parts In-Stock

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Problanco Electronics

Mexico . 3,516 parts In-Stock

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UHIMA Technologies

Türkiye . 273 parts In-Stock

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GreenTree Electronics

Israel . 180 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the SZNUP4114UCLW1T2G by Onsemi. As a leader in transient suppression devices, Onsemi ensures top-notch quality and reliability in every product. This small outline package with gull wing terminals offers superior performance in safeguarding against voltage spikes and surges. Ideal for a wide range of applications, this avalanche diode technology provides peace of mind knowing your sensitive equipment is shielded from potential damage. Invest in the SZNUP4114UCLW1T2G today and experience the value it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the device, ensuring durability and reliability.

Nominal Breakdown Voltage: 6.5 V

Higher breakdown voltage helps in protecting against voltage spikes and surges effectively.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss and efficient operation.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various operating conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides good conductivity and corrosion resistance for stable connections.

Reference Standard: AEC-Q101; IEC-61000-4-2

Meets industry standards for quality and performance assurance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, ensuring efficient protection.

Technology: AVALANCHE

Avalanche technology offers fast response time and high energy handling capability for superior protection.

Maximum Clamping Voltage: 10 V

Clamps voltage at a safe level during surges, preventing damage to connected devices.

Technical Specifications

Transient Suppression Devices SZNUP4114UCLW1T2G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

5.5 V

Nominal Breakdown Voltage:

6.5 V

Maximum Clamping Voltage:

10 V

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

5

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

5.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

SZNUP4114UCLW1T2G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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