Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN;
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Small Signal Field Effect Transistors (FET) DMN3067LW-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
JESD-609 Code:
Moisture Sensitivity Level (MSL):
Peak Reflow Temperature (C):
Terminal Finish:
Maximum Time At Peak Reflow Temperature (s):
DMN3067LW-7 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Assembly/Test Site Addition 01/Jun/2015
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
LM107H/883C
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;
2N2222A
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
LM2931AZ-5.0G
Onsemi
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
EU2B-YS3303C
Idec
ROTARY SWITCH;
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Space Power Electronics
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
IRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
EPCS4SI8N
Altera
CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;
1N4148
American Power Devices
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
DS18B20Z+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BAV99
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555DR
Texas Instruments
NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.
PIC18F4550-I/PT
Microchip Technology
PIC18F4550-I/PT by Microchip: 8-bit microcontroller with 44 terminals, 48 MHz clock frequency, and USB connectivity. Ideal for industrial applications requiring low power mode and 10-bit ADC channels.
1N4148WS
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
BSS138NL6327
BSS138NL6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A drain current, and 3.5 ohm on-resistance. Ideal for small outline applications requiring a single transistor with built-in diode in enhancement mode operation. Suitable for use in automotive electronics due to AEC-Q101 reference standard compliance.
DMP2035U-7
Diodes Incorporated
DMP2035U-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 3.6A max drain current, and 0.045 ohm RDS(on). Ideal for switching applications in small outline packages, it operates in enhancement mode with a max temp of 150°C.
BSS138NE6433
BSS138NE6433 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is surface mountable and has a max drain current of 0.23A. This transistor is commonly used in applications requiring enhancement mode operation and low power dissipation.
2N7000_D26Z
2N7000_D26Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 0.4W Power Dissipation and -55 to 150 °C operating temperature range, it offers reliable performance.
BSS138-7-F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
Vishay Intertechnology
2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.
BSS138Q-7-F
BSS138Q-7-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.2A max drain current, ideal for switching applications. It operates in enhancement mode, has 3 terminals, and features a built-in diode. With a max power dissipation of 0.3W and operating temperature range from -55 to 150°C, it meets AEC-Q101 standards for automotive use.
BSS138BKT116
ROHM
ROHM BSS138BKT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.4A ID, and 0.81 ohm RDS(on). Ideal for switching applications in small outline packages. Operating in enhancement mode with GULL WING terminals, it's a versatile choice for compact designs.
BSS138LT7G
BSS138LT7G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 3.5 ohm max RDS(on), and 150°C max operating temp. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount setups.
NX3008PBK,215
NXP Semiconductors
NX3008PBK,215 by NXP Semiconductors is a P-CHANNEL FET with max drain current of 0.23A and power dissipation of 0.42W. Ideal for applications requiring surface mount technology, it operates at up to 150°C making it suitable for various electronic devices.
2N7002DW
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; JESD-609 Code: e0; JESD-30 Code: R-PDSO-G6;
BSS84AK,215
NXP Semiconductors' BSS84AK,215 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.18A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.14W.
BF862
NXP Semiconductors' BF862 is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has a max power dissipation of 0.225W and max drain current of 0.04A. The transistor's package is RECTANGULAR with GULL WING terminals, suitable for surface mount assembly at temperatures up to 150°C.
SI2302CDS-T1-GE3
SI2302CDS-T1-GE3 by Vishay Intertechnology is a N-channel FET for switching applications. It features 20V DS breakdown voltage, 2.6A max drain current, and 0.057ohm max on-resistance. With a small outline package and operating up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
FDC5614P_NL
FDC5614P_NL by Fairchild Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3A Drain Current, 0.105 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package style, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
BSS123-G
Small Signal Field-Effect Transistors; Terminal Finish: Matte Tin (Sn) - annealed; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
FDS4935BZ
FDS4935BZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 6.9A Drain Current, and 0.022 ohm On Resistance. Ideal for SWITCHING applications, it features a RECTANGULAR package with GULL WING terminals and operates in ENHANCEMENT MODE at up to 150°C.
FDC640P
The Onsemi FDC640P is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.5A, 0.053 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
SI2323DS-T1
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
NDS332P
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JEDEC-95 Code: TO-236AB; Transistor Application: SWITCHING;
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DMN3404L-7
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
DMN3190LDW-7
DMN3190LDW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 1A max drain current, and 0.19 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance.
DMN3023L-7
DMN3023L-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 6.2A ID, and 0.025 ohm RDS(on). Ideal for switching applications in enhancement mode, it operates b/w -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
DMN3731U-7
DMN3731U-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 0.9A max drain current, and 0.46 ohm max drain-source resistance. It is used for switching applications in small outline packages.
DMN3065LW-7
DMN3065LW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 4A ID, and 0.052 ohm RDS(on). Ideal for switching applications in enhancement mode, it operates b/w -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
DMN3135LVT-7
DMN3135LVT-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 3.5A max drain current, and 0.047 ohm RDS(on). It's used for switching applications in enhancement mode operation. The transistor comes in a small outline package with gull wing terminals and operates up to 150°C.
DMN3190LDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 6;
DMN32D2LDF-7
DMN32D2LDF-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 0.4A max drain current, suitable for switching applications. It features common source configuration, 2 elements with built-in diode, and operates in enhancement mode. With a small outline package style and matte tin terminal finish, it offers efficient performance up to 150°C operating temperature.
DMN3042L-7
DMN3042L-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 5.8A max drain current, ideal for switching applications. It features a single configuration with built-in diode, 0.0265 ohm RDS(on), and 80pF Crss capacitance. This enhancement mode MOSFET in small outline package is surface mountable for efficient circuit design.
DMN30H4D0L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .47 W; Maximum Feedback Capacitance (Crss): 8.7 pF; Maximum Drain-Source On Resistance: 4 ohm;
DMN3404LQ-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
DMN3008SFG-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
DMN3731UFB4-7B
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .97 W; Terminal Position: BOTTOM; Transistor Application: SWITCHING;
DMN3051L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
DMN30H4D0LFDE-13
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30;
DMN30H4D0LFDE-7
Small Signal Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
DMN3150LW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 28 V; Transistor Element Material: SILICON;
DMN3730UFB-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .69 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 3;
DMN3008SFG-13
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
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