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DMN3731UFB4-7B

Diodes Incorporated

DMN3731UFB4-7B by Diodes Incorporated

DMN3731UFB4-7B by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 0.97W power dissipation, and 1.2A max drain current. Ideal for switching applications in enhancement mode, it operates b/w -55 to 150°C with a 0.46 ohm on-resistance.

Median Price

$0.154

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,910 parts In-Stock

1+ parts

$0.260

100+ parts

$0.100

1k+ parts

$0.065

10k+ parts

$0.049

9,910

$0.260

$0.100

$0.065

$0.049

Mouser Electronics

USA . 27,797 parts In-Stock

1+ parts

$0.320

100+ parts

$0.120

1k+ parts

$0.069

10k+ parts

$0.040

27,797

$0.320

$0.120

$0.069

$0.040

Arrow

USA . 10,000 parts In-Stock

1+ parts

-

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$0.047

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$0.047

Verical

USA . 10,000 parts In-Stock

1+ parts

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$0.044

10,000

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$0.044

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.060

100+ parts

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100

$0.060

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NAC Semi

USA . 1,530,000 parts In-Stock

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$0.021

1,530,000

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$0.021

Vyrian

USA . 761,283 parts In-Stock

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761,283

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Semtec, LLC

USA . 5,845 parts In-Stock

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5,845

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Distributors (Availability)

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Ampacity Inc.

Singapore . 761,215 parts In-Stock

1+ parts

$0.024

100+ parts

-

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761,215

$0.024

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Semicontronic

India . 761,199 parts In-Stock

1+ parts

$0.024

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$0.023

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$0.023

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761,199

$0.024

$0.023

$0.023

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Continental Prestige Electronics

USA . 4,963 parts In-Stock

1+ parts

$0.060

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$0.059

4,963

$0.060

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$0.059

Argo Parts USA

USA . 235 parts In-Stock

1+ parts

$0.060

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$0.058

235

$0.060

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$0.058

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.060

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$0.059

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100

$0.060

$0.059

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Aztec Data Supply Inc.

USA . 4,190 parts In-Stock

1+ parts

$1.310

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4,190

$1.310

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Corohmni

South Africa . 60 parts In-Stock

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$1.983

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60

$1.983

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Lixinc

USA . 16,797 parts In-Stock

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iodParts Technologies Inc.

India . 9,160 parts In-Stock

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9,160

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Overview

Experience the superior performance and reliability of the DMN3731UFB4-7B, brought to you by the trusted manufacturer Diodes Incorporated. As a top choice in the category of Small Signal Field Effect Transistors, this N-CHANNEL transistor with a built-in diode is perfect for switching applications. Its state-of-the-art technology ensures enhanced efficiency, while its compact, surface mount design makes installation a breeze. With a wide operating temperature range and high power dissipation capabilities, this transistor offers unbeatable value and versatility for all your electronic needs. Trust Diodes Incorporated to deliver quality products that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow in the specified direction

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode within the transistor package

Transistor Application: SWITCHING

Ideal for applications requiring fast switching speeds

Surface Mount: YES

Easily mountable on PCBs for streamlined manufacturing processes

Minimum DS Breakdown Voltage: 30 V

Suitable for applications requiring high voltage handling capabilities

Terminal Form: NO LEAD

Ensures compatibility with lead-free soldering processes

Operating Mode: ENHANCEMENT MODE

Provides precise control over the transistor's conductivity

Maximum Power Dissipation (Abs): 0.97 W

Can handle moderate power levels without overheating

Package Style (Meter): CHIP CARRIER

Offers a compact form factor for space-constrained applications

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Ensures high performance and reliability in switching applications

Maximum Operating Temperature: 150 °C

Suitable for high-temperature environments

Transistor Element Material: SILICON

Provides excellent electrical characteristics and reliability

Minimum Operating Temperature: -55 °C

Capable of functioning in extreme cold environments

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures good electrical conductivity and corrosion resistance

Maximum Drain Current (ID): 1.2 A

Capable of handling high current loads

Maximum Drain-Source On Resistance: 0.46 ohm

Provides low resistance for efficient current flow

Terminal Position: BOTTOM

Facilitates easy PCB mounting and soldering

Case Connection: DRAIN

Simplifies the connection to the circuit

Peak Reflow Temperature °C: 260

Withstands high-temperature soldering processes

Maximum Feedback Capacitance (Crss): 5 pF

Reduced capacitance for improved high-frequency performance

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN3731UFB4-7B attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.46 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN3731UFB4-7B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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