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DMN3042L-7

Diodes Incorporated

DMN3042L-7 by Diodes Incorporated

DMN3042L-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 5.8A max drain current, ideal for switching applications. It features a single configuration with built-in diode, 0.0265 ohm RDS(on), and 80pF Crss capacitance. This enhancement mode MOSFET in small outline package is surface mountable for efficient circuit design.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3 parts In-Stock

1+ parts

$0.059

100+ parts

$0.059

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$0.059

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3

$0.059

$0.059

$0.059

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Mouser Electronics

USA . 16,132 parts In-Stock

1+ parts

$0.500

100+ parts

$0.192

1k+ parts

$0.129

10k+ parts

-

16,132

$0.500

$0.192

$0.129

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DigiKey

USA . 64,010 parts In-Stock

1+ parts

-

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10k+ parts

$0.090

64,010

-

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$0.090

Verical

USA . 24,000 parts In-Stock

1+ parts

-

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$0.066

24,000

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$0.066

Avnet

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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$0.095

6,000

-

-

-

$0.095

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.186

3,000

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-

$0.186

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.061

3,000

-

-

-

$0.061

Element14

Singapore . 2,889 parts In-Stock

1+ parts

-

100+ parts

$0.125

1k+ parts

$0.098

10k+ parts

$0.096

2,889

-

$0.125

$0.098

$0.096

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.131

100+ parts

-

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-

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700

$0.131

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-

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Maritex

Poland . 12,000 parts In-Stock

1+ parts

$0.198

100+ parts

-

1k+ parts

-

10k+ parts

$0.046

12,000

$0.198

-

-

$0.046

TME

Poland . 313 parts In-Stock

1+ parts

$0.390

100+ parts

$0.176

1k+ parts

$0.115

10k+ parts

$0.084

313

$0.390

$0.176

$0.115

$0.084

Chip Stock

USA . 513,500 parts In-Stock

1+ parts

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513,500

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Vyrian

USA . 513,168 parts In-Stock

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513,168

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Martec Srl

Italy . 73,470 parts In-Stock

1+ parts

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73,470

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IBS Electronics

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

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$0.177

66,000

-

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$0.177

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

$0.342

6,000

-

-

-

$0.342

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 512,383 parts In-Stock

1+ parts

$0.043

100+ parts

-

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512,383

$0.043

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Semicontronic

India . 188,887 parts In-Stock

1+ parts

$0.049

100+ parts

$0.048

1k+ parts

$0.048

10k+ parts

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188,887

$0.049

$0.048

$0.048

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.131

100+ parts

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1,000

$0.131

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Argo Parts USA

USA . 151 parts In-Stock

1+ parts

$0.131

100+ parts

-

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10k+ parts

$0.127

151

$0.131

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-

$0.127

Aztec Data Supply Inc.

USA . 3,967 parts In-Stock

1+ parts

$0.470

100+ parts

-

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3,967

$0.470

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Corohmni

South Africa . 247 parts In-Stock

1+ parts

$0.495

100+ parts

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247

$0.495

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Modulus Dynamics

Lithuania . 15,003 parts In-Stock

1+ parts

$1.842

100+ parts

$1.842

1k+ parts

$1.842

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15,003

$1.842

$1.842

$1.842

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Kepictronics

USA . 33,631 parts In-Stock

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33,631

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Robosynatics

Brazil . 18,429 parts In-Stock

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18,429

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Lucentia Tech

USA . 18,429 parts In-Stock

1+ parts

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100+ parts

$0.972

1k+ parts

$0.952

10k+ parts

$0.952

18,429

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$0.972

$0.952

$0.952

Lixinc

USA . 16,395 parts In-Stock

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16,395

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,590 parts In-Stock

1+ parts

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100+ parts

$0.155

1k+ parts

$0.085

10k+ parts

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3,590

-

$0.155

$0.085

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Overview

Unlock the power of reliable performance with the DMN3042L-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality and innovation in small signal field effect transistors. Ideal for switching applications, this N-channel transistor offers enhanced efficiency and precision. With a maximum drain current of 5.8 A and a minimal drain-source on resistance of 0.0265 ohm, this transistor provides unparalleled value and benefits to customers seeking superior electronic components. Elevate your projects with the DMN3042L-7 and experience the difference in quality and performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower ON-resistance and higher switching speeds compared to P-channel transistors, making them ideal for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection and can simplify circuit design by eliminating the need for an external diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient operation in various electronic circuits.

Surface Mount: YES

Surface mount technology allows for easy and compact placement on circuit boards, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage ensures reliable operation under high voltage conditions, making this transistor suitable for a wide range of applications.

Terminal Form: GULL WING

Gull-wing terminals provide secure connections and are compatible with automated pick-and-place assembly machines, simplifying the manufacturing process.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easy control of the transistor's conductivity, making them ideal for switching applications where precise control is required.

No. of Terminals: 3

Having a small number of terminals simplifies circuit connections and reduces the risk of wiring errors, making the transistor easier to integrate into electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and fast response times, making this transistor suitable for high-frequency applications.

Transistor Element Material: SILICON

Silicon transistors provide high performance, reliability, and compatibility with existing electronic components, making them a popular choice for various applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals ensures good solderability and reliable electrical connections, making it easier to integrate the transistor into circuit boards.

Maximum Drain Current (ID): 5.8 A

The high drain current rating allows for handling higher power levels, making this transistor suitable for applications with demanding current requirements.

Maximum Drain-Source On Resistance: 0.0265 ohm

Low ON-resistance results in minimal power loss and improved efficiency in the circuit, making this transistor ideal for high-performance switching applications.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in circuit design and allows for easy connection to external components, enhancing the versatility of the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures reliable soldering during assembly processes, making this transistor suitable for automated manufacturing environments.

Maximum Feedback Capacitance (Crss): 80 pF

Low feedback capacitance minimizes signal distortion and improves overall performance in high-frequency applications, making this transistor suitable for switching circuits with fast response times.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN3042L-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

5.8 A

Maximum Drain-Source On Resistance:

.0265 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

80 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN3042L-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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