Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DMN30H4D0L-7 by Diodes Inc. is a N-channel FET with 300V DS breakdown voltage, 0.47W power dissipation, and 4ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. This small outline transistor has a peak reflow temp of 260°C and matte tin terminal finish.
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Provides durability and protection for the transistor, ensuring long-term reliability.
Suitable for applications where N-channel transistors are required.
Convenient built-in diode for reverse voltage protection.
Designed specifically for switching applications, ensuring efficient performance.
Enables easy and secure mounting on a circuit board.
High breakdown voltage for reliable operation in various power circuits.
Compact rectangular shape for space-saving installation.
Gull wing terminals provide secure connections and easy soldering.
Enhancement mode operation allows for easy control of the transistor.
Simple 3-terminal design for straightforward circuit integration.
Efficient power dissipation capability for reliability under load.
Small outline package for compact and space-efficient circuit designs.
Metal-oxide semiconductor technology for improved performance and reliability.
High maximum operating temperature for versatile use in different environments.
Silicon material for reliable and consistent transistor performance.
Wide temperature range for operation in various climates and conditions.
Matte tin finish for corrosion resistance and reliable electrical connections.
High maximum drain current for robust performance in power circuits.
Low drain-source on resistance for efficient power flow.
Dual terminal position for flexibility in circuit design and integration.
Allows for secure and reliable soldering during assembly.
High peak reflow temperature for efficient soldering and durable connections.
Low feedback capacitance for improved signal integrity and performance.
Small Signal Field Effect Transistors (FET) DMN30H4D0L-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
DMN30H4D0L-7 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Assembly REV 07/Sep/2021
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
1N4148WS
Dc Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
CRG0805F10K
TE Connectivity
TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.
LM358MX
Texas Instruments
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
BAV99
Siemens
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
SMBJ18CA
Yageo
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
First Components International
MBRS340T3G
Onsemi
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
Multicomp Pro
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
L7805CV
STMicroelectronics
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
ULN2803A
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
Diotec Semiconductor Ag
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
STM32H743IIT6
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
LM317T
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;
FDV305N_NL
Fairchild Semiconductor
FDV305N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.9A Drain Current, and 0.22 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.
FDV304P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;
NDS7002A-F169
NDS7002A-F169 by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a 60V min DS breakdown voltage, 0.3W max power dissipation, and 150°C max operating temperature. With a built-in diode and Gull Wing terminals, it offers efficient enhancement mode operation in a compact package.
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
IRF9310TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Pulsed Drain Current (IDM): 160 A; Qualification: Not Qualified;
SI2356DS-T1-GE3
Vishay Intertechnology
SI2356DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 40V DS breakdown voltage and 4.3A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.051 ohm on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
FDC2512
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 150 V;
BS170/D26Z
National Semiconductor
BS170/D26Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A ID. It operates in ENHANCEMENT MODE, has 3 terminals, and 5 ohm Drain-Source On Resistance. Widely used in electronic circuits for amplification and switching applications due to its SILICON element material and THROUGH-HOLE terminal form.
PMV65XP,215
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .076 ohm; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
NDS356AP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDC8602
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: MO-193AA;
BSS138_NL
BSS138_NL by Fairchild Semiconductor is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 6 ohm RDS. It is used for switching applications in enhancement mode with a max operating temperature of 150°C.
BS170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): CYLINDRICAL;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Transistor Application: SWITCHING; Package Style (Meter): CYLINDRICAL;
MMBF4117
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
2N7000
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: O-PBCY-T3; Maximum Operating Temperature: 150 Cel;
BSS209PWH6327XTSA1
Infineon Technologies
BSS209PWH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.63A ID, and 0.55 ohm RDS(ON). It is used in small outline applications requiring a single configuration with built-in diode for enhancement mode operation.
BSS123LT1G
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
ZXMP6A13FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; No. of Terminals: 3; Minimum DS Breakdown Voltage: 60 V;
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DMN3404L-7
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
DMN3067LW-7
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN;
DMN3190LDW-7
DMN3190LDW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 1A max drain current, and 0.19 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance.
DMN3023L-7
DMN3023L-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 6.2A ID, and 0.025 ohm RDS(on). Ideal for switching applications in enhancement mode, it operates b/w -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
DMN3731U-7
DMN3731U-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 0.9A max drain current, and 0.46 ohm max drain-source resistance. It is used for switching applications in small outline packages.
DMN3065LW-7
DMN3065LW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 4A ID, and 0.052 ohm RDS(on). Ideal for switching applications in enhancement mode, it operates b/w -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
DMN3135LVT-7
DMN3135LVT-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 3.5A max drain current, and 0.047 ohm RDS(on). It's used for switching applications in enhancement mode operation. The transistor comes in a small outline package with gull wing terminals and operates up to 150°C.
DMN3190LDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 6;
DMN32D2LDF-7
DMN32D2LDF-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 0.4A max drain current, suitable for switching applications. It features common source configuration, 2 elements with built-in diode, and operates in enhancement mode. With a small outline package style and matte tin terminal finish, it offers efficient performance up to 150°C operating temperature.
DMN3042L-7
DMN3042L-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 5.8A max drain current, ideal for switching applications. It features a single configuration with built-in diode, 0.0265 ohm RDS(on), and 80pF Crss capacitance. This enhancement mode MOSFET in small outline package is surface mountable for efficient circuit design.
DMN3404LQ-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
DMN3008SFG-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
DMN3731UFB4-7B
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .97 W; Terminal Position: BOTTOM; Transistor Application: SWITCHING;
DMN3051L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
DMN30H4D0LFDE-13
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30;
DMN30H4D0LFDE-7
Small Signal Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
DMN3150LW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 28 V; Transistor Element Material: SILICON;
DMN3730UFB-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .69 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 3;
DMN3008SFG-13
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
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