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DMN3065LW-7

Diodes Incorporated

DMN3065LW-7 by Diodes Incorporated

DMN3065LW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 4A ID, and 0.052 ohm RDS(on). Ideal for switching applications in enhancement mode, it operates b/w -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.206

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,030 parts In-Stock

1+ parts

$0.470

100+ parts

$0.182

1k+ parts

$0.121

10k+ parts

$0.085

1,030

$0.470

$0.182

$0.121

$0.085

Mouser Electronics

USA . 8,807 parts In-Stock

1+ parts

$0.500

100+ parts

$0.195

1k+ parts

$0.146

10k+ parts

-

8,807

$0.500

$0.195

$0.146

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Newark

USA . 146 parts In-Stock

1+ parts

$0.502

100+ parts

$0.213

1k+ parts

$0.153

10k+ parts

-

146

$0.502

$0.213

$0.153

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Verical

USA . 933,000 parts In-Stock

1+ parts

-

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$0.077

933,000

-

-

-

$0.077

Arrow

USA . 264,000 parts In-Stock

1+ parts

-

100+ parts

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$0.063

264,000

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-

-

$0.063

RS (Exports)

UK . 5,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.107

5,250

-

-

-

$0.107

Element14

Singapore . 1,388 parts In-Stock

1+ parts

-

100+ parts

$0.206

1k+ parts

$0.152

10k+ parts

$0.149

1,388

-

$0.206

$0.152

$0.149

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

-

10k+ parts

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15

$0.150

-

-

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TME

Poland . 2,518 parts In-Stock

1+ parts

$0.440

100+ parts

$0.177

1k+ parts

$0.109

10k+ parts

$0.082

2,518

$0.440

$0.177

$0.109

$0.082

Vyrian

USA . 209,220 parts In-Stock

1+ parts

-

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209,220

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IBS Electronics

USA . 177,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.050

177,000

-

-

-

$0.050

Chip Stock

USA . 93,500 parts In-Stock

1+ parts

-

100+ parts

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93,500

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Flip Electronics

USA . 90,000 parts In-Stock

1+ parts

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90,000

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Sensible Micro Corp

USA . 67,593 parts In-Stock

1+ parts

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100+ parts

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67,593

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-

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NAC Semi

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.420

39,000

-

-

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$0.420

Bristol Electronics

USA . 37,399 parts In-Stock

1+ parts

-

100+ parts

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37,399

-

-

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Atlantic Semiconductor

USA . 37,399 parts In-Stock

1+ parts

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100+ parts

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37,399

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Speed Components Ltd

Israel . 343 parts In-Stock

1+ parts

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343

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Prism Electronics

USA . 6 parts In-Stock

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6

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 185,844 parts In-Stock

1+ parts

$0.054

100+ parts

$0.053

1k+ parts

$0.052

10k+ parts

-

185,844

$0.054

$0.053

$0.052

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Ampacity Inc.

Singapore . 208,845 parts In-Stock

1+ parts

$0.059

100+ parts

-

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-

10k+ parts

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208,845

$0.059

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Advanced Electronics

New Zealand . 33 parts In-Stock

1+ parts

$0.134

100+ parts

$0.134

1k+ parts

$0.134

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33

$0.134

$0.134

$0.134

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Argo Parts USA

USA . 4,840 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

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10k+ parts

$0.146

4,840

$0.150

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-

$0.146

Continental Prestige Electronics

USA . 3,874 parts In-Stock

1+ parts

$0.325

100+ parts

$0.146

1k+ parts

$0.082

10k+ parts

-

3,874

$0.325

$0.146

$0.082

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Corohmni

South Africa . 49 parts In-Stock

1+ parts

$1.110

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49

$1.110

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Aztec Data Supply Inc.

USA . 35 parts In-Stock

1+ parts

$1.770

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35

$1.770

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ChipstoGo Electronic ltd

UK . 30,000 parts In-Stock

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30,000

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Lixinc

USA . 18,990 parts In-Stock

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18,990

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Robosynatics

Brazil . 17,068 parts In-Stock

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17,068

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Lucentia Tech

USA . 17,068 parts In-Stock

1+ parts

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100+ parts

$1.609

1k+ parts

$1.576

10k+ parts

$1.576

17,068

-

$1.609

$1.576

$1.576

iodParts Technologies Inc.

India . 6,130 parts In-Stock

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6,130

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Kepictronics

USA . 4,155 parts In-Stock

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4,155

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.147

1k+ parts

$0.143

10k+ parts

$0.140

100

-

$0.147

$0.143

$0.140

Overview

Upgrade your electronics with the DMN3065LW-7 by Diodes Incorporated, a top-tier manufacturer known for its high-quality components. This small signal field effect transistor (FET) is ideal for switching applications, offering reliability and performance that exceeds expectations. With a built-in diode and N-channel configuration, this enhancement mode transistor ensures smooth operation and efficiency. Experience the benefits of superior design and innovative technology with the DMN3065LW-7, providing value and unmatched advantages to customers in need of reliable electronic solutions.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides a lightweight and durable enclosure for the transistor, making it suitable for various applications.

Polarity or Channel Type:

N-CHANNEL - Offers efficient current conduction and control, making it ideal for switching applications.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space by incorporating a diode within the transistor package.

Transistor Application:

SWITCHING - Specifically designed for fast switching operations, ensuring quick response times in electronic circuits.

Surface Mount:

YES - Enables easy and compact integration onto circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage:

30 V - Provides a high breakdown voltage rating, ensuring reliable performance in high voltage applications.

Package Shape:

RECTANGULAR - Offers a standard shape for easy mounting and compatibility with various circuit designs.

Terminal Form:

GULL WING - Facilitates easy soldering and connection to circuit boards, ensuring secure and reliable electrical connections.

Operating Mode:

ENHANCEMENT MODE - Allows for precise control of the transistor's conduction, enhancing performance in switching applications.

No. of Terminals:

3 - Features a compact size with minimal terminals, suitable for small and simple circuit layouts.

Package Style (Meter):

SMALL OUTLINE - Provides a compact and space-saving design, ideal for applications with limited space constraints.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Ensures high performance and efficiency, making it suitable for a wide range of applications.

Maximum Operating Temperature:

150 °C - Withstands high temperatures, ensuring reliable operation in demanding environments.

Transistor Element Material:

SILICON - Offers high conductivity and reliability, ensuring long-lasting performance in electronic circuits.

Minimum Operating Temperature:

55 °C - Capable of operating in extreme cold temperatures, making it versatile for various environmental conditions.

Terminal Finish:

MATTE TIN - Provides a corrosion-resistant finish for the terminals, ensuring long-term reliability in electronic circuits.

Maximum Drain Current (ID):

4 A - Capable of handling high current loads, suitable for powering various electronic components.

Maximum Drain-Source On Resistance:

0.052 ohm - Offers low resistance for efficient current flow, enhancing performance in power management applications.

Terminal Position:

DUAL - Features dual terminal positions for versatile mounting options, providing flexibility in circuit design.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures proper soldering and bonding during assembly processes, ensuring reliable connections.

Peak Reflow Temperature °C:

260 - Withstands high reflow temperatures during assembly, ensuring proper soldering and joint integrity for reliable performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN3065LW-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.052 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN3065LW-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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