Loading...

DMN3730UFB-7

Diodes Incorporated

DMN3730UFB-7 by Diodes Incorporated

DMN3730UFB-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 0.91A max drain current, and 0.46 ohm max on resistance. Ideal for switching applications in enhancement mode operation, it features a chip carrier package style and operates at up to 150°C.

Median Price

$0.496

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,240 parts In-Stock

1+ parts

$0.860

100+ parts

$0.364

1k+ parts

$0.262

10k+ parts

-

4,240

$0.860

$0.364

$0.262

-

Verical

USA . 252,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.131

252,000

-

-

-

$0.131

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.187

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.187

-

-

-

Chip Stock

USA . 315,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

315,500

-

-

-

-

Vyrian

USA . 68,122 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

68,122

-

-

-

-

Component Sense

UK . 35,673 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

35,673

-

-

-

-

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Prism Electronics

USA . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 88,877 parts In-Stock

1+ parts

$0.111

100+ parts

$0.108

1k+ parts

$0.108

10k+ parts

-

88,877

$0.111

$0.108

$0.108

-

Ampacity Inc.

Singapore . 88,851 parts In-Stock

1+ parts

$0.111

100+ parts

-

1k+ parts

-

10k+ parts

-

88,851

$0.111

-

-

-

Bastille Electronics

Australia . 550 parts In-Stock

1+ parts

$0.187

100+ parts

$0.178

1k+ parts

$0.169

10k+ parts

$0.166

550

$0.187

$0.178

$0.169

$0.166

Argo Parts USA

USA . 4,402 parts In-Stock

1+ parts

$0.187

100+ parts

-

1k+ parts

-

10k+ parts

$0.182

4,402

$0.187

-

-

$0.182

Continental Prestige Electronics

USA . 2,412 parts In-Stock

1+ parts

$0.187

100+ parts

-

1k+ parts

-

10k+ parts

$0.184

2,412

$0.187

-

-

$0.184

Modulus Dynamics

Lithuania . 12,138 parts In-Stock

1+ parts

$1.537

100+ parts

$1.537

1k+ parts

$1.537

10k+ parts

-

12,138

$1.537

$1.537

$1.537

-

Corohmni

South Africa . 344 parts In-Stock

1+ parts

$1.601

100+ parts

-

1k+ parts

-

10k+ parts

-

344

$1.601

-

-

-

Aztec Data Supply Inc.

USA . 2,125 parts In-Stock

1+ parts

$1.870

100+ parts

-

1k+ parts

-

10k+ parts

-

2,125

$1.870

-

-

-

Perfect Parts

USA . 20,928 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,928

-

-

-

-

Lixinc

USA . 10,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,920

-

-

-

-

Kepictronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.170

10k+ parts

-

3,000

-

-

$0.170

-

Overview

Discover the DMN3730UFB-7 by Diodes Incorporated, a high-quality N-channel field effect transistor designed for switching applications. With a maximum drain current of 0.75A and low on-resistance of 0.46 ohm, this enhancement-mode FET offers exceptional performance in a compact chip carrier package. Trust in Diodes Incorporated's expertise in semiconductor technology to deliver reliable and efficient components for your electronics projects. Upgrade your designs with the DMN3730UFB-7 for improved power management and enhanced functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the internal components of the transistor, making it long-lasting and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high efficiency and fast switching speeds, making this transistor suitable for applications requiring quick response times.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid changes in voltage and current effectively.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can withstand high voltages, making it suitable for a wide range of applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration into circuit boards, saving space and simplifying the assembly process.

Maximum Drain Current (Abs): 0.91 A

A high maximum drain current rating of 0.91A indicates that this transistor can handle higher currents without overheating or failing, making it ideal for demanding applications.

Maximum Power Dissipation (Abs): 0.69 W

With a maximum power dissipation of 0.69W, this transistor can effectively dissipate heat, ensuring stable performance under high load conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can operate in a wide range of environments, making it versatile and reliable.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN3730UFB-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.91 A

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

.46 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN3730UFB-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19