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DMN3150LW-7

Diodes Incorporated

DMN3150LW-7 by Diodes Incorporated

DMN3150LW-7 by Diodes Inc. is a N-channel FET with 28V DS breakdown voltage and 1.6A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a 0.088 ohm max drain-source resistance. This small outline transistor can handle up to 150°C operating temperature, making it suitable for various electronic devices.

Median Price

$0.246

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 14,835 parts In-Stock

1+ parts

$0.630

100+ parts

$0.249

1k+ parts

$0.169

10k+ parts

$0.121

14,835

$0.630

$0.249

$0.169

$0.121

Mouser Electronics

USA . 2,673 parts In-Stock

1+ parts

$0.670

100+ parts

$0.267

1k+ parts

$0.202

10k+ parts

-

2,673

$0.670

$0.267

$0.202

-

Newark

USA . 815 parts In-Stock

1+ parts

$0.690

100+ parts

$0.275

1k+ parts

$0.186

10k+ parts

-

815

$0.690

$0.275

$0.186

-

Arrow

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.138

10k+ parts

$0.120

15,000

-

-

$0.138

$0.120

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.246

10k+ parts

-

15,000

-

-

$0.246

-

Element14

Singapore . 2,620 parts In-Stock

1+ parts

-

100+ parts

$0.196

1k+ parts

$0.144

10k+ parts

$0.140

2,620

-

$0.196

$0.144

$0.140

Farnell

UK . 2,620 parts In-Stock

1+ parts

-

100+ parts

$0.190

1k+ parts

$0.145

10k+ parts

$0.121

2,620

-

$0.190

$0.145

$0.121

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

-

10k+ parts

-

870

$0.163

-

-

-

Vyrian

USA . 299,590 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

299,590

-

-

-

-

Chip Stock

USA . 212,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

212,500

-

-

-

-

NAC Semi

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.160

18,000

-

-

-

$0.160

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 340,326 parts In-Stock

1+ parts

$0.037

100+ parts

$0.036

1k+ parts

$0.036

10k+ parts

-

340,326

$0.037

$0.036

$0.036

-

Ampacity Inc.

Singapore . 339,286 parts In-Stock

1+ parts

$0.077

100+ parts

-

1k+ parts

-

10k+ parts

-

339,286

$0.077

-

-

-

Continental Prestige Electronics

USA . 5,757 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

-

10k+ parts

$0.160

5,757

$0.163

-

-

$0.160

Argo Parts USA

USA . 1,189 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

-

10k+ parts

$0.158

1,189

$0.163

-

-

$0.158

Corohmni

South Africa . 289 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

-

289

$0.166

-

-

-

Advanced Electronics

New Zealand . 55 parts In-Stock

1+ parts

$0.166

100+ parts

$0.166

1k+ parts

$0.166

10k+ parts

-

55

$0.166

$0.166

$0.166

-

Aztec Data Supply Inc.

USA . 1,640 parts In-Stock

1+ parts

$1.720

100+ parts

-

1k+ parts

-

10k+ parts

-

1,640

$1.720

-

-

-

Andel Nordic

Denmark . 5,278 parts In-Stock

1+ parts

$9.970

100+ parts

-

1k+ parts

$9.571

10k+ parts

$9.571

5,278

$9.970

-

$9.571

$9.571

Futuretech Components

Singapore . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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48,000

-

-

-

-

Kepictronics

USA . 34,461 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

34,461

-

-

-

-

Eastek

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.140

10k+ parts

-

21,000

-

-

$0.140

-

GreenTree Electronics

Israel . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,000

-

-

-

-

Lixinc

USA . 13,142 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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13,142

-

-

-

-

Overview

Upgrade your electronic devices with the DMN3150LW-7 by Diodes Incorporated, a top-quality Small Signal Field Effect Transistor perfect for switching applications. With a sleek rectangular package body and gull wing terminals, this N-CHANNEL transistor offers enhanced performance and reliability. Say goodbye to power limitations with a maximum drain current of 1.6 A and a low on-resistance of 0.088 ohm. Experience the benefits of fast and efficient operation in a compact design. Trust Diodes Incorporated for cutting-edge technology that delivers exceptional value to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower on-resistance and higher electron mobility, making this transistor efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient control of current flow and protection against reverse voltage, enhancing the transistor's performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Surface Mount: YES

Surface mount technology provides a compact form factor and easy integration onto circuit boards, making it ideal for space-constrained applications.

Minimum DS Breakdown Voltage: 28 V

With a minimum breakdown voltage of 28V, this transistor can handle higher voltage applications with ease.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN3150LW-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

28 V

Maximum Drain Current (Abs) (ID):

1.6 A

Maximum Drain Current (ID):

1.6 A

Maximum Drain-Source On Resistance:

.088 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN3150LW-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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